EC 401 TRANSISTOR Search Results

b20100

Abstract: ptc 205 ir 520 T0-204MA
Contextual Info: Series PTC 401, PTC 402 High Voltage NPN Transistors 3 Amperes * 700 Volts FEATURES • High Voltage Rating - 7 0 0 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators • PWM Inverters

2N4007

Abstract: 2N4011 2N401 2N4006 2N400 N4010 2N4009
Contextual Info: TELEDYNE COMPONENTS . 5ûE D • r«-/7 flT17tiDE OQGt.S'iD b ■ PREMIUM PERFORMANCE U LTRA LOWrec sat 2N4006 THRU 2N4011 SILICON EPITAXIAL JUNCTION PNP SWITCHING TRANSISTORS G E O M E T R Y 292 »EC t*"*) 3 Ohms Typical LOW C^b LOW LEAKAGE H IG H B V ebo

3225 K30

Abstract: K30 varistor VARISTOr MZ smd code 601 ZV30K0603 keko st smd IC marking code
Contextual Info: Multilayer Technology Varistor Plus ZV Series Low Voltage SMD Varistors SEI Electronics Inc. • P.O. Box 58789 • Raleigh, NC 27658-8789 • Telephone: 919 850-9500 • FAX: (919) 850-9504 Toll Free: (888) SEI-SEI-SEI • www.seielect.com • email: marketing@seielect.com • ISO 9002 / QS 9000 Registered

PS2815-1-F3

Abstract: diode marking 100-10 n2 PS2815-4-A EN60747-5-2 PS2815-1 PS2815-1-F4 PS2815-4 PS2815-4-F3 VDE0884 PS2815-1-F3-A
Contextual Info: PHOTOCOUPLER PS2815-1,PS2815-4 LOW AC INPUT CURRENT, HIGH CTR 4, 16-PIN SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2815-1 and PS2815-4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor in a plastic SSOP for high density applications.

diode marking 100-10 n2

Abstract: EN60747-5-2 PS2811-1 PS2811-1-F3 PS2811-1-F4 PS2811-4 PS2811-4-F3 VDE0884
Contextual Info: PHOTOCOUPLER PS2811-1,PS2811-4 LOW INPUT CURRENT, HIGH CTR 4, 16-PIN SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2811-1 and PS2811-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications.

tab ic

Abstract: GE d44q3 D40N1 D40N2 D40N3 D40N4 D40N5 D40P1 D40P3 D40P5
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE Pt GE Type r c = 25°C Max. W D40N1 D 40N 2 D 40N 3 D40N4 6.25 6.25 6.25 6.25 Min. •c Cont. (V) (A) v CEO 60 250 30 300 60 300 6.25 375 D40P1 6.25 120 D 40P3 6.25 180 S l i i t l D42RI D 42R2 D 42R3 D42R4 6.25

PTC411

Contextual Info: \ ' Y 61 1 5 9 5 0 ' M IC R O S E M I ’ C O R P / P Ó W E R OS y 02E 0 0 4 0 8 D —- _? 3 —/ j DE i h l l S T S D DDDD4DÖ D r " • p T C 41 o PTC 411 Power Technology Components HÎGH VOLTAGE NPN TRANSISTORS ? 3.5 AMPERES 300 VOLTS Switch Time and

K1461

Abstract: BD180 transistor with gain 10 BD176 BD179 BD176 motorola
Contextual Info: MOTO RO LA SC XSTRS/R 1EE D § F MOTOROLA 0004715 b | BD176,-6,-10,-16 BD180,-6,-10 SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 3.0 AMPERES POWER TRANSISTOR PNP SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers

EC 401 TRANSISTOR

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5074 CO LO R TV HORIZONTAL OUTPUT APPLICATION NO Damper Diode T O -3 P F • High Collector-Base Voltage (V cbo = 1500V) • High Speed Switching (tf. max=0.4uS) ABSO LUTE MIXIMUM RATING Characteristic Sym bo l

t2221

Abstract: 50J301 pt5088
Contextual Info: NPN TRANSISTORS ELECTRICAL CHARACTERISTICS a t Tt = 25 C A M a rk in g T ype 3 1 O D e vice V T BB CEO V LBfljESO M ax. @ VCB (V> (V) v CE(aat) DC C u rre n t G ain ^CBO <nA) (V) h FE h FE @ i c @ v CE Max. @ lc M in. M ax. (m A ) (V) (V) (m A ) lr M in. @ lc

MA4T64400

Abstract: low noise transistors MA4T645 MA4T644
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t

chopper circuits in dc motor

Abstract: LMC35 CS299D 299D CS-298 cherry switch D4 cherry D4 LMC3
Contextual Info: DUAL FULL-BRIDGE DRIVER DESCRIPTION The CS-298 is a power integrated circuit capable of driving resistive and inductive loads such as relays, solenoids, DC and stepping motors. This device is a quad push-pull driver with the ability to deliver up to 2A of

bux85

Contextual Info: N AI1ER PHILIPS/DISCRETE b'lE D bb53T31 0026577 H22 BUX84 BUX85 APX SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in TO-220 envelopes, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •

bd950

Abstract: 80954 b0952 B0950 BD949 BD954 USA060-1
Contextual Info: BD950; 952 BD954; 956 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. W ith the ir n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.

pulse stretcher circuit diagram

Abstract: CS-2516N8 WUI6817157 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT
Contextual Info: Pulse-load Battery Monitor Description The CS-2516 is designed for use in bat­ tery pow ered m edical, security, or envi­ ronm ental system s w here prior notifica­ tion of im pending pow er source failure is a requirem ent. The IC effectively p ro ­ vides continuous m onitoring of battery

2SK929

Abstract: PS7K 2 fy
Contextual Info: M O S Field Effect Pow er Transistor 2SK929 MOS F E T Itffl 2SK929 l ì , T N MOS F E T 6 < , t •Vf- > r m , X ' i y f y tS > , K W m T O : mm) ¡ S l t l 'i S - X 'i 10.5 M A X . DC-D C 3 > /< - ? 4.7 M A X . 3 .0 M A X . # i t ° V d ss = 500 V, I dcdc) =

IC 74181

Abstract: CD401 MC14581
Contextual Info: HARRIS Œ S E M I C O N D U C T O R CD40181BMS CM O S 4 Bit Arithmetic Logic Unit December 1992 Features Description • High Voltage type 20V Rating • Full Look Ahead C an y for Speed Operations on Long Words • Generates 16 Logic Functions of Itoo Boolean Variables

41ba

Abstract: BUW13AF BUW13F UBC098 sot199
Contextual Info: Product specification Philips Semiconductors BUW13F; BUW13AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, motor control systems, etc.

transistor marking bh ra

Abstract: 2SA1641
Contextual Info: S A N Y O S E M I C O N D U C T O R CORP SHE D 7 eJ‘ì707b 000-7140 4 2SA1641 T- 31-IS PNP Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications I2326A F eatures . Adoption of FBET, MBIT processes. • Low saturation voltage. • F ast switching speed.

BFP96

Abstract: BFP96 P6 BFQ32C OA74 Philips MBB UBB824 1462, TRANSISTOR MB8627 transistor 1548
Contextual Info: Philips Semiconductors bbSB'ÎBl D D3 14Û 5 1ÔS M A P X Product specification NFN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE ]> PINNING NPN transistor in hermetically sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes.

FST 460 transistor

Abstract: DIODE 3LU TC-7600 Bt460 PS7K Transistor FST 460 IEF620 2SK1288
Contextual Info: ^ — S> • S ' — h NEC MOS — h= 7 > i> ^ M O S Field Effect Pow er Transistor 2SK1288 y<r7— M O S FET m m x i f f l 2 S K 1 2 8 8 i , mm M O S FET T", 5 v ic <r>frtsizu X -i -yf >?"T"' s'-i X t ’to fS^t >ffiÎÆT”, X ^ 7 f > ?, v u # i t /-f.iir &

BLV38

Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179
Contextual Info: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .

Contextual Info: Alternator Voltage Regulator Darlington Driver D escription Features T h e C S - 3 3 4 1 / 3 3 5 1 / 3 8 6 / 3 8 7 i n te g r a l p r o v i d e d to d r i v e a n e x t e r n a l d a r - altern ator re g u lato r integrated cir­ lington transistor ca p a b le of s w itc h ­