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SiTime Corporation SIT3808AIFDF-33EB-80.000000X MEMS OSC VCXO 80.0000MHZ LVCMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT3808AIFDF-33EB-80.000000X	Digi-Reel	205		1	1 $15.79 10 $13.643 100 $11.8007 1000 $11.8007 10000 $11.8007	Buy Now
	SIT3808AIFDF-33EB-80.000000X	Cut Tape	205		1	1 $15.79 10 $13.643 100 $11.8007 1000 $11.8007 10000 $11.8007	Buy Now
	SIT3808AIFDF-33EB-80.000000X	Reel			250	1 - 10 - 100 - 1000 $10.675 10000 $10.675	Buy Now
Abracon Corporation AMPMDEB-8.0000 MEMS OSC XO 8.0000MHZ CMOS SMD
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DigiKey	AMPMDEB-8.0000	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	AMPMDEB-8.0000	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	AMPMDEB-8.0000			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation AMPMDEB-8.0000T3 MEMS OSC XO 8.0000MHZ CMOS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AMPMDEB-8.0000T3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
SiTime Corporation SIT9005AI-13D33EB80.000000 MEMS OSC XO 80.0000MHZ LVCMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT9005AI-13D33EB80.000000				1	1 $4.53 10 $4.305 100 $3.7385 1000 $3.05879 10000 $2.83222	Buy Now
SiTime Corporation SIT9003AI-23-33EB-80.00000Y MEMS OSC XO 80.0000MHZ LVCMOS LV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT9003AI-23-33EB-80.00000Y	Reel			1,000	1 - 10 - 100 - 1000 $3.0294 10000 $3.0294	Buy Now
Avnet Americas	SIT9003AI-23-33EB-80.00000Y	Reel		24 Weeks	1,000	1 - 10 - 100 - 1000 $2.64119 10000 $2.64119	Buy Now

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EB8000 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SA452 Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this	Original	PDF	Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
BA379 Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	PDF	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
asme SA388 Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ	Original	PDF	S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
120R Abstract: C8800 Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	PDF	Am29LV2562M 120R C8800
l256mh113 Abstract: L256ML123R Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	PDF	Am29LV256M l256mh113 L256ML123R
L256MH113R Abstract: L256ML113R Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG	Original	PDF	Am29LV256M L256MH113R L256ML113R
s29gl032m10tair Abstract: No abstract text available Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics	Original	PDF	S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte BGA-80P-M02 s29gl032m10tair
SA293 Abstract: SA273 988000 Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations	Original	PDF	Am29LV256M 16-Bit/32 16-word/32-byte 56-pi SA293 SA273 988000
L256ML Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110 Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations	Original	PDF	Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte L256ML SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
29gl064 Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,	Original	PDF	S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128N, S29GL256N S29GL032M, 29gl064 TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
sa330 Abstract: E3800 spansion top marking Am29LV256M Am29LV256MH S29GL256M Text: Am29LV256M Data Sheet For new designs, S29GL256M supercedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced	Original	PDF	Am29LV256M S29GL256M Am29LV256MH/L S29GLxxxM sa330 E3800 spansion top marking Am29LV256M Am29LV256MH
S29GL128P Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For	Original	PDF	S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128P, S29GL256P S29GL032M, S29GL128P a8800 S29GL032 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
BA512 Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379 Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh	Original	PDF	K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
BA339 Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204 Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	PDF	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204

E78000 Abstract: SA275 SA388 sa489 transistor SA427 120R 9898H Am29LV2562MH120 sa414 Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	PDF	Am29LV2562M E78000 SA275 SA388 sa489 transistor SA427 120R 9898H Am29LV2562MH120 sa414
8A0000 Abstract: No abstract text available Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics	Original	PDF	S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte S29GLxxxMA0 8A0000
ba508 Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473 Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary	Original	PDF	K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
SA508 Abstract: Am29LV256M SA285 SA276 CD8000 E68000 988000 Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations	Original	PDF	Am29LV256M 16-Bit/32 16-word/32-byte SA508 SA285 SA276 CD8000 E68000 988000
Spansion S29GL256N90 Abstract: S29GL512N11 S29GL256N10 S29GL512NH GL512N TXI002 S29GL256N90 Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Data Sheet Distinctive Characteristics Architectural Advantages	Original	PDF	S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte TBD--64-Ball 27631A0 Spansion S29GL256N90 S29GL512N11 S29GL256N10 S29GL512NH GL512N TXI002 S29GL256N90
CD8000 Abstract: No abstract text available Text: Am29LV256M Data Sheet For new designs, S29GL256M supersedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced	Original	PDF	Am29LV256M S29GL256M Am29LV256MH/L S29GLxxxM CD8000
Untitled Abstract: No abstract text available Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	PDF	K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns---
ba508 Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329 Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	PDF	K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- ba508 BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
E78000 Abstract: SA370 Am29LV256MH98R L256MH113R L256MH128 L256MH123R LAC064 11D00 Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with Enhanced VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations	Original	PDF	Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte LAC064--64-Ball TS056 TSR056 E78000 SA370 Am29LV256MH98R L256MH113R L256MH128 L256MH123R LAC064 11D00
A81DC Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040 Text: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF	OCR Scan	PDF	ANE408/D DSP56000/1 ANE408 ANE008) DSP56000/1 300-3400hz A81DC a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040

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EB8000 Search Results

EB8000 Price and Stock

SiTime Corporation SIT3808AIFDF-33EB-80.000000X

Abracon Corporation AMPMDEB-8.0000

Abracon Corporation AMPMDEB-8.0000T3

SiTime Corporation SIT9005AI-13D33EB80.000000

SiTime Corporation SIT9003AI-23-33EB-80.00000Y

EB8000 Datasheets Context Search

SA452

BA379

asme SA388

120R

l256mh113

L256MH113R

s29gl032m10tair

SA293

L256ML

29gl064

sa330

S29GL128P

BA512

BA339

E78000

8A0000

ba508

SA508

Spansion S29GL256N90

CD8000

Untitled

ba508

E78000

A81DC