MOSFET MARK H1
Abstract: 2SK2762-01L 2SK2762-01S
Text: X S P E C I F I C A T I O N DEVICE NAME : TYPE NAJE : Powe r M O SF ET 2 S K 2 7 6 2 - Q 1 L . S SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED P i ii¡ F l o r t r i r 1tri DRAWN CHECKED
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2SK2762-01L
EaTe30
MOSFET MARK H1
2SK2762-01L
2SK2762-01S
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Untitled
Abstract: No abstract text available
Text: ERC04 F (1.5A) Outline Drawings GENERAL USE RECTIFIER DIODE ) Features • Compact size, light weight • S U f fiii I ^ tk : Marking High reliability ! Applications Abridged type name General purpose rectifier applications V? | ° l• B E ? 7* Voltage class
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ERC04
eaTe30
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IJP LC 300
Abstract: 2MBI75L-120 M216 T151 T930
Text: 2MBI75L-120 75A IGBT (L SERIES) -Jl> IGBT MODULE : Features • High Speed S w itching • l&tSiflWGE Low Saturation V oltage • « £ E K » ( M O S ^ - H U f i) • Voltage Drive Variety of Power Capacity Series : Applications <f —$ • A C , D C I f —& 7 > ' ?
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2MBI75L-120
11S19^
I95t/R89)
Shl50
IJP LC 300
M216
T151
T930
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