E3000 Search Results

Contextual Info: Intel Celeron® Processor E3000 Series Datasheet August 2010 Document Number: 322567-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

Contextual Info: DIELECTRIC MATERIALS E3000 - General description E3000 SERIES Description TEMEX has designed the E3000 series material and a manufacturing process for applications which require: • A wide selection of temperature coefficients, • Tight frequency tolerances,

Contextual Info: SYM. 9 17 p i £ o p s « Man ' ON ft DCN D E S C R I P T I ON S£ M f t & NO. DATE B DRAWN m APP ’D s m CHECKED tl ÜS APP ’D & M 9 N I MVÜQ - § - » [ ! N0 T E 2 ) SECT. T A B L E 1 ( S C A L E C~ C 2 : 1 ) £ A 20S»-VFH 05-A1-E3000 1 4 1 2 I L —3 1 2 — A 3 0 S * —V F H 0 5 - A 1 - E 3 0 0 0

intel celeron e3400 Block Diagram

Abstract: E3500 peci Intel E3500 intel celeron E3200 Intel Celeron E3500
Contextual Info: Intel Celeron® Processor E3000 Series Datasheet August 2010 Document Number: 322567-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

full adder circuit using nor gates

Abstract: M780 ecl eor
Contextual Info: January 1990 Edition 1.0 ^ = = ^ = = ^ ^ = = = = = = DATA SHEET FUJITSU E30000VH ECL Gate Array FEATURES • High Performance Logic - 80 ps/gate typical at 2.95 mW1 -135 ps/gate typical at 1.11 mW1 • 38948 Maximum Equivalent Gates2 • High I/O Count - 300 I/O available

E4000

Abstract: E2000
Contextual Info: DIELECTRIC MATERIALS Product characteristics - General overview PRODUCT CHARACTERISTICS: GENERAL OVERVIEW QF E4000 150000 50000 E2000/3000 E6000 E5000 1 GHz 10000 10 GHz 30 100 GHz Frequency E4000 34 E3000 37 E2000 45 E6000 78 E5000 Permittivity Electrical and physical characteristics

Contextual Info: Tubular Filters ◆ Features - Lowpass ◆ To Order 5 L121 - 350 / E3000 - O / OP 1 234 5 6 7 8 9 K&L has four different tubular lowpass filters ranging in size from .25 inch diameter to 1.25 inch diameter to cover the frequency range of 30MHz to 20GHz. K&L uses a .05dB Chebyshev

full adder circuit using nor gates

Abstract: D14DL gating a signal using NAND gates half adder ic number equivalent transistor K 3565 nor_4 fd2h LD10H RAM-6A
Contextual Info: FUJITSU NICR OELECTRONICS 31E D □ 37417b2 oombMa t caiFfii ¿ S January 1990 Edition 1.0 t h * - i i - i : FUJITSU DATA S H E E T E30000VH ECL Gate Array FEATURES • High Performance Logic I/O Options - 80 ps/gate typical at 2.95 mW1 -1 0 K H E C L - 1 3 5 ps/gate typical at 1.11 mW1

TEkelec

Contextual Info: DIELECTRIC MATERIALS Contents MICROWAVE DIELECTRIC RESONATORS CONTENTS CONTENTS PRODUCTION & QUALITY SYSTEM INTRODUCTION / USER GUIDE E2000/E3000 SERIES E4000 SERIES E5000 SERIES E9000 SERIES SALES OFFICES WEB SITE: http://www.tekelec-temex.com 13-1 AMERICA: +1 602 780 1995

Socket S1g1

Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Contextual Info: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

ich10r

Abstract: 82801jir 82801JR IDG4510H E27730-305 E3110 Intel IDG4510H E1000 E2000 E7000
Contextual Info: Intel Desktop Board DG45FC Specification Update September 2008 Order Number: E46340-002US The Intel® Desktop Board DG45FC may contain design defects or errors known as errata, which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.

StrongARM sa-110 233mhz

Abstract: 08P2707 08P2708 Fibre channel controller -40
Contextual Info: SCSI4ME: Mylex eXtremeRAID 3000 High Performance 1GB Fibre RAID Controller w/128MB BDIMM International Orders View Cart Contact Us Help Email: sales@scsi4me.com Phone: 1-703-455-3061 Office Hours: 9AM-6PM EST. M-F Search: Product here! Categories Welcome to SCSI4ME

Contextual Info: FA1/FA2 SERIES CONNECTORS 0.50mm .020" Contact Spacing, ZIF Connectors for FPC • • • • • • • • • • • • • • FA1/FA2 Series connectors are high density, low profile connectors for FPC applications. The ZIF (zero insertion force)

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

M50FLW080

Abstract: M50FLW080A M50FLW080B PLCC32 TSOP32
Contextual Info: M50FLW080A M50FLW080B 8 Mbit 13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)

FL128P

Abstract: SPANSION FL128P
Contextual Info: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70

JESD97

Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)