E 634 TRANSISTOR Search Results

E 634 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

E 634 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
500w car audio amplifier circuit diagram Abstract: dc-ac inverter PURE SINE WAVE schematic diagram 500w inverter PURE SINE WAVE schematic diagram car 12 volts amplifier mosfet 200w rms inverter welder schematic power inverter 115v 400Hz 8038 ic tester circuit diagram max pa97 1200w power amplifier circuit diagram inverter welder schematic diagram Text: M I C R O T E C H N O L O G Y ECHNICAL seminar Designed to Help You Boost Your Analog Design Power REVISION 6 – MAY 2001 Table of Contents Welcome to Apex…………….… 634 Where we live…………………… 635 Quality at Apex…………………… 636	Original		PDF
FMMT634Q Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current	Original	FMMT634 900mA 625mW FMMT734 AEC-Q101 DS33115 FMMT634Q	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data •           BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation	Original	FMMT634 900mA 625mW FMMT734 AEC-Q101 J-STD-020 DS33115	PDF
FMMT634Q Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 	Original	FMMT634Q 900mA 625mW FMMT734Q AEC-Q101 DS37051 FMMT634Q	PDF
stc 4606 Abstract: mitsubishi cable sc03 64F22 H8S/2210 HD6432210 HD6432211 HD6432217 HD64F2212 HD64F2212U HD64F2218 Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original	H8S/2218 H8S/2212 stc 4606 mitsubishi cable sc03 64F22 H8S/2210 HD6432210 HD6432211 HD6432217 HD64F2212 HD64F2212U HD64F2218	PDF
NTE2640 Abstract: NPN VCEO 800V transistor nte2640 Text: NTE2640 Silicon NPN Transistor Color TV Horizontal Deflection Output Features: D High Speed D High Collector–Emitter Breakdown Voltage D High Reliability D On–Chip Damper Diode Absolute Maximum Ratings: TA + 25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V	Original	NTE2640 100mA, 630mA 500mA 400mA, 800mA, NTE2640 NPN VCEO 800V transistor nte2640	PDF
Selector Guide Abstract: TFBS2711X01 Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared	Original	AEC-Q101 VMN-SG2166-1308 Selector Guide TFBS2711X01	PDF
TFBS2711 Abstract: TFBS2711X01 windshield rain sensor "steering Angle Sensor" TEMD6200 solar sensor TEMT6200 TEMD6000FX01 TEMT6000FX01 TEMD5510FX01 Text: V i s h ay I n t e r t ec h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared	Original	AEC-Q101 VMN-SG2166-1111 TFBS2711 TFBS2711X01 windshield rain sensor "steering Angle Sensor" TEMD6200 solar sensor TEMT6200 TEMD6000FX01 TEMT6000FX01 TEMD5510FX01	PDF
d634 Abstract: d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634 Text: 2s d 633 s /' J j y N P N = s m * w ? - 1j y h y ^ y v ? •SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR 2 S D 634 2s d O X % t> X 4 O '' y o Power o Hammer • H igh 635 7 > 7 — F 7 -t 7’ , Sw itching D rive, P ulse DC C u r r e n t Low C ollector	OCR Scan	2SD634, 2SD633, 2SD635 d634 d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634	PDF
design of 300 watt mosfet inverter transformer Abstract: FERRITE core TRANSFORMER 300 watt inverter Ti3C Caddell-Burns 6860 Caddell-Burns toroid cores size table FERRITE TOROIDAL CORE DATA IB5AC siemens toroidal core "Inverting Switching Regulator" Text: j y \ Æ A \ j y \ CMOS M icropow er In verting S w itch in g R egulator M a x im ’s M A X 634 a n d MAX4391 C M O S D C -D C re gu la to rs are d e s ig n e d f o r sim p le , e ffic ie n t, in v e rtin g D C -D C co n ve rte r c irc u its . T he MAX634 and MAX4391	OCR Scan	MAX634 MAX4391 525mA 100/iA MAX637 MAX638 MAX641 MAX642 design of 300 watt mosfet inverter transformer FERRITE core TRANSFORMER 300 watt inverter Ti3C Caddell-Burns 6860 Caddell-Burns toroid cores size table FERRITE TOROIDAL CORE DATA IB5AC siemens toroidal core "Inverting Switching Regulator"	PDF
Untitled Abstract: No abstract text available Text: Central" CZT122 NPN CZT127 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR POWER DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed	OCR Scan	CZT122 CZT127 CZT122, OT-223 26-September OT-223	PDF
pnp DARLINGTON TRANSISTOR ARRAY Abstract: D75FY2D Text: D75FY2D PNP POWER DARLINGTON TRANSISTOR ARRAY -80 VOLTS -2 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 3 in 1 • Epoxy single-inline package (8 pin)	OCR Scan	D75FY2D D75FY2D -10mA, pnp DARLINGTON TRANSISTOR ARRAY	PDF
B0415 Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063 Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2	OCR Scan	BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063	PDF
honeywell m 944 r Abstract: lasar DFC-4 transistor tt 2190 em MXC4 DSC8 Text: HONEYIilELL/SS ELEKn MIL 03 ËË1 45S1Ô72 DD0027S S \|~D T -Ÿ 2 -//-0 ? Honeywell h c t s o o o , h c t -isooo Preliminary R A D IA T IO N T O L E R A N T C M O S G A T E A R R A Y S FAMILY FEATURES • Proven VLSI Design System VDS Toolkit • Radiation Tolerant Serie of 1.2-Micron CMOS	OCR Scan	DD0027S MIL-M-38510 honeywell m 944 r lasar DFC-4 transistor tt 2190 em MXC4 DSC8	PDF

1557 b transistor Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5 Text: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s	OCR Scan	30MHz 2SC1557 1557 b transistor transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC C4053 uhf transistor amplifier K8J5	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E T> • bbS3131 □□E6011 TE5 APX MPSAOb _J V _ MPSA06 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA	OCR Scan	bbS3131 E6011 MPSA06 MPSA05	PDF
MPSA06 Abstract: MPSA05 transistor MPSA06 Text: N AMER PHI LIP S/DISCRETE b^E J> m bbSBiai GDEÖD11 TES MPSAUÖ MPSA06 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in plastic TO-92 envelope fo r general purpose applications. Q UICK REFERENCE D A T A MPSA06 MPSA05 Collector-em itter voltage	OCR Scan	MPSA06 MPSA05 NECC-C-002 MPSA06 transistor MPSA06	PDF
Untitled Abstract: No abstract text available Text: SANYO SEMICONDUCTOR FC111 CORP 22E D 7Tî707t Q0D73Ô0 ñ T-37-/3 # PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications 3079 with Bias Resistances R1=22kfl, R2=22kO Features • On-chip bias resistors (Ri = 22kfl,R2= 22kQ) • Composite type with 2 transistors contained in the CP package currently in use, improving the	OCR Scan	FC111 Q0D73Ã T-37-/3 22kfl, 22kfl 2SA1342, 4139MO	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ IO k fi, R2=47Ki2 _E L ÜJ Type Marking Ordering Code BCR 135W WJs n r Pin Configuration Q62702-C2287 1= B Package	OCR Scan	47Ki2) Q62702-C2287 OT-323	PDF
e 634 transistor Abstract: No abstract text available Text: UMA10N FMA10A Transistor, digitai, dual, PNP, with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages • package marking: UMA1 ON and FMA10A; A10 • package contains two interconnected PNP digital transistors (DTA113ZKA)	OCR Scan	UMA10N FMA10A SC-74A) FMA10A; DTA113ZKA) SC-70) SC-59) UMA10N UMA10N, e 634 transistor	PDF
CM631 Abstract: No abstract text available Text: MG50N2CK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain	OCR Scan	MG50N2CK1 CM631	PDF
634 transistor Abstract: No abstract text available Text: DTC363ES Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • available in SPT (SC-72) package • in addition to standard features of digital transistor, this transistor has: DTC363ES (SPT) •I * o ;• r;i ■"1 — low collector saturation voltage,	OCR Scan	DTC363ES SC-72) DTC363ES 634 transistor	PDF
q1205 Abstract: No abstract text available Text: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)	OCR Scan	C62702-C748 150iiin E35LD5 flE35bQ5 q1205	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation	OCR Scan	2SC5011	PDF

E 634 TRANSISTOR Search Results

E 634 TRANSISTOR Result Highlights (5)

E 634 TRANSISTOR Datasheets Context Search

500w car audio amplifier circuit diagram

FMMT634Q

Untitled

FMMT634Q

stc 4606

NTE2640

Selector Guide

TFBS2711

d634

design of 300 watt mosfet inverter transformer

Untitled

pnp DARLINGTON TRANSISTOR ARRAY

B0415

honeywell m 944 r

1557 b transistor

Untitled

MPSA06

Untitled

Untitled

e 634 transistor

CM631

634 transistor

q1205

Untitled