DUAL INFRARED TRANSISTOR Search Results

Infrared Phototransistor

Abstract: TPOWER
Contextual Info: Optoisolator Specifications 4N38, 4N38A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. These

MOCD207

Abstract: two transistor forward
Contextual Info: MOCD207 HIGH DENSITY MOUNTING DUAL CHANNEL OPTICALLY COUPLED ISOLATOR Dimensions in mm DESCRIPTION The MOCD207 optically coupled isolator consists of an two infrared light emitting diodes and two NPN silicon photo transistors in a space efficient dual in line plastic package.

MOCD217

Contextual Info: MOCD217 HIGH DENSITY MOUNTING DUAL CHANNEL OPTICALLY COUPLED ISOLATOR Dimensions in mm DESCRIPTION The MOCD217 optically coupled isolator consists of an two infrared light emitting diodes and two NPN silicon photo transistors in a space efficient dual in line plastic package.

Contextual Info: MCT6H/ MCT62H VISHAY Vishay Telefunken Y Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a photo­ transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

Contextual Info: O p toisolator S pecification s 4N35, 4N36, 4N37 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T he 4N 35,4N 36,4N 37 are gallium arsenide infrared em itting diodes coupled with a silicon phototransistor in a dual in-line package.

NTE3086

Contextual Info: NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability.

ge mct2

Abstract: IC MCT2E IC 1 MCT2E MCT26 GE solid state
Contextual Info: E SOLI» STATE 01 Optoelectronic Specifications DE^3â75Gfll DDlTfl?1! 1 T -W l-S 3 Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a dual- -S^ ^ G

IS-953

Abstract: GEPS2001
Contextual Info: E SOLI» STATE 01 Optoelectronic Specifications DE § 3 0 7 5 0 0 1 DOnflSfl 0 T ^ J -S3 K' Photon Coupled Isolator GEPS2001 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State GEPS2001 is a gallium arsenide, infrared emit­ ting diode coupled with a silicon phototransistor in a dual-in-line

ic mct2e

Abstract: IC 1 MCT2E MCT2E characteristics ge mct2 mct2e MCT2 MCT2 GE solid state MCT26
Contextual Info: G E SOLID STATE 01 DE Optoelectronic Specifications T 3a75afli o n n a ? M t 1~" I- Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs Infrared Em itting Diode & NPN Silicon Photo-Transistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a dual­

Diode LT 02 KE

Abstract: CQY80 608 diode
Contextual Info: G E SOLI» STATE □1 D E | 3 ñ7 S0 ñ l D onaiñ I Optoelectronic Specification* I - 33 Photon Coupled Isolator CQY80 . Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State CQY80 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a dual-in-line

Contextual Info: G E SOLID STATE 01 Optoelectronic Specifications D E 3 a ? S 0 a i 001%flD 7 I Photon Coupled Isolator4N38,4N38A MIN. Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line

H11C2-H11C3

Abstract: Opto-isolator 50V-RGK
Contextual Info: Optoisofator Spécifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T he HI 1C1, HI 1C2 and H11C3 are gallium arsenide, infrared em itting diodes coupled with light activated silicon controlled rectifiers in a dual in-line package. T hese devices are also

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS tfi] DESCRIPTION [& The H11B series consists of a gallium arsenide infrared em itting diode, coupled with a silicon photodarlington transistor in a dual in-line package. FEATURES

transistors 6822

Abstract: WORKING PRINCIPLE IR SENSOR passive Infrared-Sensor KRX10 philips pyroelectric infrared sensor sot253 pyroelectric amplifier circuit IEC134 pyroelectric TO-5 M8910
Contextual Info: Philips Components krxio _ J \ _ Supersedes October 1987 data DUAL ELEMENT PYROELECTRIC INFRARED SENSOR Special features: Enhanced IR sensitivity Wide field o f view Pick and place compatible Application:

MOCD208

Abstract: MOCD207 application note D207 MOCD207 D208 RS481A motorola D207
Contextual Info: MOTOROLA Order this document by MOCD207/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR = 100 – 200%] Transistor Output [CTR = 40 – 125%] These devices consist of two gallium arsenide infrared emitting diodes

transistor D207

Abstract: motorola D207 MOCD208 d207 MOCD207 D208 RS481A
Contextual Info: MOTOROLA Order this document by MOCD207/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR = 100 – 200%] Transistor Output [CTR = 40 – 125%] These devices consist of two gallium arsenide infrared emitting diodes

pc357a

Abstract: IS357A
Contextual Info: IS357A HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS357A is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.

FPT1

Abstract: IS181B IS181 IS181A IS181C IS181D TLP181
Contextual Info: IS181 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS181 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.

IS121

Abstract: TLP121 IS121A IS121B IS121C IS121D
Contextual Info: IS121 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS121 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.

IS181B

Abstract: toshiba tlp181 mini mold transistor fpt1 IS181 IS181A IS181C IS181D TLP181
Contextual Info: IS181 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS181 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.

IS357D

Abstract: FPT1 IS357 IS357A IS357B IS357C PC357 Dual transistor TD-100 fpt-1
Contextual Info: IS357 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.

IS357

Abstract: IS357C PC357 IS357A IS357B IS357D
Contextual Info: IS357 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.

opto d213

Abstract: d213 opto MOCD213 T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline Optoisolator MOCD213 Transistor Output [CTR > 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, In a surface

IS121C

Abstract: IS121 IS121A IS121B IS121D TLP121 FPT1
Contextual Info: IS121 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS121 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.