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    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 Optoelectronic Specifications D E 3 a ? S 0 a i 001%flD 7 I Photon Coupled Isolator4N38,4N38A MIN. Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line


    OCR Scan     		PDF Isolator4N38 4N38A 4N38A 0110b

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 37E 4302271 D 0027142 L> I HAS Optoelectronic Specifications_ T -V /-S 3 Photon Coupled Isolator4N38,4N38A MIN. 3 1« tTOPVIEWI 4 FEATURES: 2 6 ! s 1 - s y y u • Fast switching speeds , • High DC current transfer ratio • High isolation resistance


    OCR Scan     		PDF Isolator4N38 4N38A E51868 92CS-42662 92CS-429S1

    4N38

    Abstract: 4N38A 4N38 A
    Text: G E SOLID STATE 01 Optoelectronic Specifications D E § 3a ? s o a i o o n t a o Photon Coupled Isolator4N38,4N38A The G E Solid State 4N38 and 4N38A consist o f a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line


    OCR Scan     		PDF T-4/-83 Isolator4N38 4N38A E51868 0110b 4N38A_ 4N38 4N38A 4N38 A