transistors mos
Abstract: No abstract text available
Text: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics
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3N212
3N212
com/3n212
transistors mos
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3N211
Abstract: Depletion
Text: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics
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3N211
3N211
com/3n211
Depletion
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Untitled
Abstract: No abstract text available
Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max
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NTE454
NTE454
20Vdc
30Vdc
200MHZ
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NTE454
Abstract: 200MHZ VG15
Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max
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NTE454
NTE454
20Vdc
30Vdc
200MHZ
200MHZ
VG15
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER MAXIMUM RATINGS Rating Drain-source voltage Symbol Value Unit VDS 25 Vdc 30 Vdc 50 mAdc ±10 mAdc VDG1 Drain-gate voltage VDG2 Drain current ID IG1 Gate current IG2 Total device dissipation @ TA = 25°C
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3N201-3N203
MIL-PRF-19500,
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NTE221
Abstract: depletion MOSFET riss
Text: NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.
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NTE221
NTE221
depletion MOSFET
riss
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3SK180
Abstract: No abstract text available
Text: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.
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ENN2129B
3SK180
3SK180]
3SK180
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k 2129 MOSFET
Abstract: 3SK180
Text: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.
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ENN2129B
3SK180
3SK180]
k 2129 MOSFET
3SK180
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82599
Abstract: No abstract text available
Text: 3SK263 Ordering number : EN4423C SANYO Semiconductors DATA SHEET 3SK263 N-Channel Silicon MOSFET Dual Gate FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Features • • • Enhancement type Small noise figure Small cross modulation Specifications
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EN4423C
3SK263
014A-006
3SK263-5-TG-E
SC-61,
82599
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3SK263
Abstract: 82599TH
Text: Ordering number:ENN4423A N-Channel Silicon MOSFET Dual Gate 3SK263 FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Features Package Dimensions • Enhancement type. · Small noise figure. · Small cross modulation. unit:mm 2096A [3SK263] 0.5 1.9
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ENN4423A
3SK263
3SK263]
3SK263
82599TH
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated stabilized bias network • Integrated gate protection diodes
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BG3230
BG3230R
BG3230
VPS05604
EHA07215
OT363
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3SK236
Abstract: No abstract text available
Text: 3SK236 Silicon N–Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C
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3SK236
3SK236
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BCR108S
Abstract: BG3230 mosfet 2g2
Text: BG3230 DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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BG3230
OT363
BCR108S
BG3230
mosfet 2g2
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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BG3230
BG3230R
OT363
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BG3230
Abstract: BG3230R VPS05604
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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BG3230
BG3230R
VPS05604
BG3230
EHA07215
OT363
Feb-27-2004
BG3230R
VPS05604
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BG3230
Abstract: BG3230R VPS05604
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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BG3230
BG3230R
VPS05604
BG3230
EHA07215
OT363
BG3230R
VPS05604
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PDF
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BCR108S
Abstract: BG3230 BG3230R mosfet 2g2 marking code 4D marking G2s
Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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BG3230
BG3230R
BG3230
OT363
BCR108S
BG3230R
mosfet 2g2
marking code 4D
marking G2s
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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BG3230
BG3230R
BG3230
VPS05604
EHA07215
OT363
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PDF
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3SK237
Abstract: No abstract text available
Text: 3SK237 Silicon N–Channel Dual Gate MOSFET Application CMPAK-4 UHF/VHF RF amplifier Features 2 • High gain and low niose • Capable of low voltage operation 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol
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3SK237
3SK237
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BG3130
Abstract: BG3130R VPS05604 3D SOT363
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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BG3130.
VPS05604
BG3130
BG3130R
EHA07461
OT363
Feb-27-2004
BG3130
BG3130R
VPS05604
3D SOT363
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Untitled
Abstract: No abstract text available
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
BG3130R
OT363
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Untitled
Abstract: No abstract text available
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
VPS05604
BG3130R
EHA07461
BG3130
OT363
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PDF
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marking K1 sot363
Abstract: No abstract text available
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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BG3130.
BG3130
BG3130R
EHA07461
OT363
OT363
marking K1 sot363
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PDF
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Untitled
Abstract: No abstract text available
Text: HITACHI 3SK236-Silicon N-Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 m r' • Excellent cross modulation characteristics • Capable of low voltage operation 4 1 . Source 2. Gatel 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C
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3SK236----------Silicon
3SK236
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