DUAL GATE MOSFET VHF AMPLIFIER Search Results

transistors mos

Contextual Info: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics

3N211

Abstract: Depletion
Contextual Info: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics

Contextual Info: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max

NTE454

Abstract: 200MHZ VG15
Contextual Info: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max

Contextual Info: DIGITRON SEMICONDUCTORS 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER MAXIMUM RATINGS Rating Drain-source voltage Symbol Value Unit VDS 25 Vdc 30 Vdc 50 mAdc ±10 mAdc VDG1 Drain-gate voltage VDG2 Drain current ID IG1 Gate current IG2 Total device dissipation @ TA = 25°C

NTE221

Abstract: depletion MOSFET riss
Contextual Info: NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.

3SK180

Contextual Info: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.

k 2129 MOSFET

Abstract: 3SK180
Contextual Info: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.

82599

Contextual Info: 3SK263 Ordering number : EN4423C SANYO Semiconductors DATA SHEET 3SK263 N-Channel Silicon MOSFET Dual Gate FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Features • • • Enhancement type Small noise figure Small cross modulation Specifications

3SK263

Abstract: 82599TH
Contextual Info: Ordering number:ENN4423A N-Channel Silicon MOSFET Dual Gate 3SK263 FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Features Package Dimensions • Enhancement type. · Small noise figure. · Small cross modulation. unit:mm 2096A [3SK263] 0.5 1.9

Contextual Info: BG3230_BG3230R 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated stabilized bias network • Integrated gate protection diodes

3SK236

Contextual Info: 3SK236 Silicon N–Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C

BCR108S

Abstract: BG3230 mosfet 2g2
Contextual Info: BG3230 DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes

Contextual Info: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes

Contextual Info: DIGITRON SEMICONDUCTORS MFE120–MFE122 DUAL GATE MOSFET VHF AMPLIFIER MAXIMUM RATINGS Rating Symbol Value VDS 25 Vdc Drain Current ID 30 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 300 1.7 mW mW/°C TJ, Tstg -65 to +175 °C Drain Source Voltage

BG3230

Abstract: BG3230R VPS05604
Contextual Info: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes

BG3230

Abstract: BG3230R VPS05604
Contextual Info: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes

BCR108S

Abstract: BG3230 BG3230R mosfet 2g2 marking code 4D marking G2s
Contextual Info: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes

Contextual Info: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes

3SK237

Contextual Info: 3SK237 Silicon N–Channel Dual Gate MOSFET Application CMPAK-4 UHF/VHF RF amplifier Features 2 • High gain and low niose • Capable of low voltage operation 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol

BG3130

Abstract: BG3130R VPS05604 3D SOT363
Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain

Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain

marking K1 sot363

Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain