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    DSS 706 Search Results

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    DSS 706 Price and Stock

    Amphenol Corporation DSS1XSXXG04X

    D-Sub Standard Connectors 9P F CRIMP BODY 4-40 INSERTS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSS1XSXXG04X 115
    • 1 $5.36
    • 10 $4.88
    • 100 $4.3
    • 1000 $3.11
    • 10000 $2.9
    		Buy Now

    Amphenol Corporation DSS1XSXXG03X

    D-Sub Standard Connectors 9P F CRIMP BODY M3 INSERTS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSS1XSXXG03X 98
    • 1 $5.74
    • 10 $5.22
    • 100 $4.6
    • 1000 $3.33
    • 10000 $3.1
    		Buy Now

    Amphenol Corporation DSS2XSXXG04X

    D-Sub Standard Connectors 15P SOCKET TIN 4-40 THREAD INSERT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSS2XSXXG04X 88
    • 1 $5.49
    • 10 $4.99
    • 100 $4.4
    • 1000 $3.19
    • 10000 $2.97
    		Buy Now

    Amphenol Corporation DSS5XSXXG04X

    D-Sub Standard Connectors 50P FEMALE CRIMP 4-40 UNC THREADED
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSS5XSXXG04X 80
    • 1 $7.17
    • 10 $6.49
    • 100 $5.33
    • 1000 $3.81
    • 10000 $3.81
    		Buy Now

    Amphenol Corporation DSS3XSXXG04X

    D-Sub Standard Connectors DSUB CRIMP BODY WR SZ AWG24-20,28-24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DSS3XSXXG04X 77
    • 1 $6.12
    • 10 $5.54
    • 100 $4.85
    • 1000 $3.57
    • 10000 $3.57
    		Buy Now
    Find more DSS 706 price and stock on Findchips.com

    DSS 706 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: P.C.B. LAYOUT . 2.54 ^ 1.0 -6-H& u • \ \ \ j 0— 0— 0CM CO Prod. No. CIRCUIT DIAGRAM 1 2 3 4 5 6 7 DSS DSS DSS DSS DSS DSS DSS DSS DSS DSS 8 701 702 703 704 705 706 707 708 709 710 N N N N N N N N N N No. of Pos. A 1 2 3 4 5 6 7 8 9 10 3.95 6.50 9.05


    OCR Scan     		100mA, 50mOhm 50/60Hz) 180sec. UL94V-0 PDF

    2sk1317

    Abstract: Hitachi DSA002779
    Text: 2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		2SK1317 D-85622 2sk1317 Hitachi DSA002779 PDF

    VP0300B

    Abstract: vishay LT VP0300L VP0300LS VQ2001J VQ2001P 70217
    Text: _VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS M in (V ) rDS(on) Max (Q ) Id (A) V GS(th) (V ) VP0300B 2.5 @ VGS = —12 V - 2 to —4.5 -1.25 VP0300L


    OCR Scan     		VP0300B/L/LS, VQ2001J/P VP0300B VP0300L VP0300LS VQ2001J VQ2001 S-58620â -Jun-99 vishay LT VP0300L VP0300LS VQ2001J VQ2001P 70217 PDF

    mosfet bs250

    Abstract: BS250 TP0610L part marking for tp0610t BS250 datasheet VP0610T equivalent of BS250 TO-92-18RM VP0610L TP0610T
    Text: TP0610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T


    Original     		TP0610L/T, VP0610L/T, BS250 TP0610L TP0610T VP0610L VP0610T mosfet bs250 BS250 TP0610L part marking for tp0610t BS250 datasheet VP0610T equivalent of BS250 TO-92-18RM VP0610L TP0610T PDF

    VQ2001P

    Abstract: No abstract text available
    Text: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (W) VGS(th) (V) ID (A) VP0300L V(BR)DSS Min (V) 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5


    Original     		VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P O-226AA, VP0300L S-00591--Rev. 04-Apr-00 VQ2001P PDF

    SUM110N10-09

    Abstract: sum110n10
    Text: SUM110N10-09 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V


    Original     		SUM110N10-09 O-263 S-04970--Rev. 29-Oct-01 SUM110N10-09 sum110n10 PDF

    BS250

    Abstract: mosfet bs250 VP0610T TP0610L TP0610T VP0610L
    Text: TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 PRODUCT SUMMARY PART NUMBER V BR DSS MIN (V) RDS(ON) MAX (W) VGS(TH) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T


    Original     		TP0610L/T, VP0610L/T, BS250 TP0610L TP0610T VP0610L VP0610T BS250 mosfet bs250 VP0610T TP0610L TP0610T VP0610L PDF

    equivalent of BS250

    Abstract: BS250 datasheet TA 7061 BS250 VP0610T part marking for tp0610t TO-92-18RM TP610L TP0610L TP0610T
    Text: TP610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOS Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60


    Original     		TP610L/T, VP0610L/T, BS250 TP0610L TP0610T VP0610L VP0610T equivalent of BS250 BS250 datasheet TA 7061 BS250 VP0610T part marking for tp0610t TO-92-18RM TP610L TP0610L TP0610T PDF

    VP0300B

    Abstract: VQ2001P VP0300L VP0300LS VQ2001J
    Text: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5


    Original     		VP0300B/L/LS, VQ2001J/P VP0300B VP0300L VQ2001J VQ2001P VP0300LS O-226AA, VP0300L S-58620--Rev. VP0300B VQ2001P VP0300LS VQ2001J PDF

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 18-Jul-08 SUM110N10-09 SUM110N10-09-E3 PDF

    vp0300m

    Abstract: VP0300B VP0300L VQ2001J VQ2001P 38283
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M


    Original     		VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA, VP0300L P-38283--Rev. vp0300m VP0300B VQ2001J VQ2001P 38283 PDF

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D


    Original     		TP0202T O-23ion S-52426--Rev. 14-Apr-97 TP0202T PDF

    VP0300M

    Abstract: VP0300L
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M


    Original     		VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA, PDF

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 08-Apr-05 SUM110N10-09 SUM110N10-09-E3 PDF

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix New Product N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 08-Apr-05 SUM110N10-09 SUM110N10-09-E3 PDF

    IXTP76N075

    Abstract: 76n075
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T VDSS ID25 = = 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		IXTA76N075T IXTP76N075T O-263 76N075T IXTP76N075 76n075 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested


    Original     		SUM110N10-09 O-263 SUM110N10-09 SUM110N10-09-E3 08-Apr-05 PDF

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D


    Original     		TP0202T O-236 S-52426--Rev. 14-Apr-97 TP0202T PDF

    TA 7061

    Abstract: TP0202T S4450
    Text: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 Features Benefits Applications D D D D


    Original     		TP0202T O-236 S-44505--Rev. 06-Sep-94 TA 7061 TP0202T S4450 PDF

    IXTP76N075T

    Abstract: 76n075 76N075T ixtp76n075 IXTA76N075T 305v 76N07
    Text: Preliminary Technical Information IXTA76N075T IXTP76N075T TrenchMVTM Power MOSFET = = VDSS ID25 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		IXTA76N075T IXTP76N075T O-263 O-220) 76N075T IXTP76N075T 76n075 76N075T ixtp76n075 IXTA76N075T 305v 76N07 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK / IXFN 32N60 IXFK / IXFN 36N60 V DSS ^D25 600 V 600 V 32 A 36 A D DS on 0.25 Q 0.18 Q N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK


    OCR Scan     		IXFK32N60 IXFN32N60 IXFK36N60 IXFN36N60 32N60 36N60 O-264 OT-227 E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM110N10-09 Vishay Siliconix New Product N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested


    Original     		SUM110N10-09 O-263 SUM110N10-09 SUM110N10-09-E3 08-Apr-05 PDF

    SUM110N10-09

    Abstract: SUM110N10-09-E3
    Text: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested


    Original     		SUM110N10-09 O-263 SUM110N10-09-E3 125ure S-32523--Rev. 08-Dec-03 SUM110N10-09 SUM110N10-09-E3 PDF

    bs250

    Abstract: mosfet bs250 tp0610lt VP0610T TP0610T
    Text: TP0610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part N u m b e r V BR>DSS M in (V r DS(on) M a x (f ì) V GS(th) (V ) I d (A) TP0610L -60 10 @ V o s - -10 V -1 to -2.4 -0.18


    OCR Scan     		TP0610L/T, VP0610L/T, BS250 TP0610L TP0610T VP0610L VP0610T BS250 mosfet bs250 tp0610lt PDF