Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DS99867A Search Results

    DS99867A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFB44N100P

    Abstract: IXFB44N100 44n10 44n100p DS99867A
    Text: PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous


    Original     		PDF IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D IXFB44N100P IXFB44N100 44n10 DS99867A

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 44A Ω 220mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D