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    ITZ08C12P

    Abstract: T0247
    Text: ITZ08C12 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5070 - 1.1 December 1998 The ITZ08C12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a


    OCR Scan     		ITZ08C12 DS5070 ITZ08C12 ITZ08C12P T0247 PDF

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    Abstract: No abstract text available
    Text: M ITEL ITZ08C12 Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5070 - 1.1 Decem ber 1998 The ITZ08C 12 is a very robust non punch through nc h a n n e l, e n h a n c e m e n t m ode in s u la te d g a te b ip o la r


    OCR Scan     		ITZ08C12 DS5070 ITZ08C PDF