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    Untitled

    Abstract: No abstract text available
    Text: DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = +25°C 220mΩ @ VGS = 10V 1.6A 250mΩ @ VGS = 4.5V 1.3A NEW PRODUCT 100V Low On-Resistance Low Input Capacitance


    Original     		DMN10H220L AEC-Q101 DS36720 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN10H220L 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS NEW PRODUCT 100V Features and Benefits •       ID RDS(on) max TA = +25°C 220mΩ @ VGS = 10V 1.6A 250mΩ @ VGS = 4.5V 1.3A Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN10H220L DS36720 PDF