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    DMN1025UFDB

    Abstract: No abstract text available
    Text: DMN1025UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Device V BR DSS RDS(ON) max ID MAX TA = +25°C N-Channel 12V 25mΩ @ VGS = 4.5V 30mΩ @ VGS = 2.5V 38mΩ @ VGS = 1.8V 6.9A 6.3A 5.5A •       Low On-Resistance


    Original     		PDF DMN1025UFDB AEC-Q101 DS36668 DMN1025UFDB