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    Untitled

    Abstract: No abstract text available
    Text: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features ADV AN CE I N FORM AT I ON Product Summary V BR DSS 60V ID max TA = +25°C RDS(ON) max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN6040SFDE U-DFN2020-6 DS35792

    Untitled

    Abstract: No abstract text available
    Text: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 38mΩ @ VGS = 10V 6.5A 47mΩ @ VGS = 4.5V 5.2A 60V 100% Unclamped Inductive Switch (UIS) test in production


    Original     		PDF DMN6040SFDE AEC-Q101 DS35792

    marking n8

    Abstract: No abstract text available
    Text: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary ID max TA = +25°C RDS ON max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E V(BR)DSS 60V Features and Benefits 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN6040SFDE U-DFN2020-6 AEC-Q101 DS35792 marking n8

    Untitled

    Abstract: No abstract text available
    Text: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS 60V Features ID max TA = +25°C RDS(ON) max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN6040SFDE U-DFN2020-6 AEC-Q101 DS35792

    Untitled

    Abstract: No abstract text available
    Text: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary ID max TA = +25°C RDS ON max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E V(BR)DSS 60V Features and Benefits 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN6040SFDE U-DFN2020-6 AEC-Q101 DS35792

    Untitled

    Abstract: No abstract text available
    Text: SiG E C P L E S S E Y SE M I CO N D U CT O RS DS3579-2.3 MA5101 RADIATION HARD 256 X 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3jam technology. The design uses a 6 transistor cell and has full static operation with


    OCR Scan     		PDF DS3579-2 MA5101 MA5101 GS010%