DS35724 Search Results

X2-DFN1006-3

Abstract: DMN2500UFB4-7
Contextual Info: DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 0.4Ω @ VGS = 4.5V 1A 0.7Ω @ VGS = 1.8V 0.8A 20V Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max

MA31750 processor architecture

Abstract: MA31750 DS3572-4 edac MA31755 DS3572-3 md08
Contextual Info: MA31755 MA31755 16-Bit Feedthrough Error Detection & Correction Unit EDAC Replaces June 1999 version, DS3572-3.0 The MA31755 is a 16 bit Error Detection and Correction Unit intended for use in high integrity systems for monitoring and correcting data values retrieved from memory. The EDAC

MA31750

Abstract: MA31750 processor architecture MA31755 XG451 CS1N CB05
Contextual Info: MA31755 MA31755 16-Bit Feedthrough Error Detection & Correction Unit EDAC Replaces January 2000 version, DS3572-4.0 The MA31755 is a 16 bit Error Detection and Correction Unit intended for use in high integrity systems for monitoring and correcting data values retrieved from memory. The EDAC

Contextual Info: DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 0.4Ω @ VGS = 4.5V 1A 0.7Ω @ VGS = 1.8V 0.8A 20V Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max

Contextual Info: DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 0.4Ω @ VGS = 4.5V 1A 0.7Ω @ VGS = 1.8V 0.8A ADV AN CE I N FORM AT I ON 20V Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max