DMG2307L
Abstract: DMG2307L-7
Text: DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 90mΩ @ VGS = -10V -3.8A 134mΩ @ VGS = -4.5V -3.1A • • • • • • -30V Mechanical Data Description and Applications
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Original
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DMG2307L
AEC-Q101
DS35414
DMG2307L
DMG2307L-7
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 90mΩ @ VGS = -10V -3.8A 134mΩ @ VGS = -4.5V -3.1A V(BR)DSS NEW PRODUCT Features and Benefits • -30V Mechanical Data Description and Applications
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Original
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DMG2307L
AEC-Q101
DS35414
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 90mΩ @ VGS = -10V -3.8A 134mΩ @ VGS = -4.5V -3.1A V(BR)DSS NEW PRODUCT Features and Benefits -30V • Low On-Resistance Low Input Capacitance
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Original
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DMG2307L
AEC-Q101
DS35414
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary N EW PRODU CT V BR DSS RDS(ON) max ID max TA = 25°C 90mΩ @ VGS = -10V -3.8A 134mΩ @ VGS = -4.5V -3.1A • • • • • • -30V Mechanical Data Description and Applications
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Original
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DMG2307L
DS35414
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PDF
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