DS31954 Search Results
DS31954 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
e 102m 3kVContextual Info: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management |
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DMP1096UCB4 AEC-Q101 U-WLB1010-4 DS31954 e 102m 3kV | |
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Contextual Info: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 102mΩ @ VGS = -4.5V -2.6A 116mΩ @ VGS = -2.5V -2.4A V(BR)DSS • • • • • • • -12V Description and Applications • • • Low Qg & Qgd Small Footprint Low Profile 0.62mm height |
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DMP1096UCB4 AEC-Q101 WL-CSP1010H6-nd DS31954 | |
WL-CSP1010H6-4Contextual Info: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMP1096UCB4 AEC-Q101 DS31954 WL-CSP1010H6-4 | |
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Contextual Info: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMP1096UCB4 DS31954 |