e 102m 3kV
Abstract: No abstract text available
Text: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management
|
Original
|
DMP1096UCB4
AEC-Q101
U-WLB1010-4
DS31954
e 102m 3kV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 102mΩ @ VGS = -4.5V -2.6A 116mΩ @ VGS = -2.5V -2.4A V(BR)DSS • • • • • • • -12V Description and Applications • • • Low Qg & Qgd Small Footprint Low Profile 0.62mm height
|
Original
|
DMP1096UCB4
AEC-Q101
WL-CSP1010H6-nd
DS31954
|
PDF
|
WL-CSP1010H6-4
Abstract: No abstract text available
Text: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
DMP1096UCB4
AEC-Q101
DS31954
WL-CSP1010H6-4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
DMP1096UCB4
DS31954
|
PDF
|