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    Untitled

    Abstract: No abstract text available
    Text: DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A V(BR)DSS NEW PRODUCT Features and Benefits •      30V Low On-Resistance Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN3110S AEC-Q101 DS31561

    Untitled

    Abstract: No abstract text available
    Text: DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A • • • • • • 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF DMN3110S AEC-Q101 DS31561

    Untitled

    Abstract: No abstract text available
    Text: DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary N EW PRODU CT V BR DSS RDS(ON) max ID max TA = 25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A • • • • • • 30V Mechanical Data Description and Applications


    Original     		PDF DMN3110S DS31561