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Catalog Datasheet	MFG & Type	PDF	Document Tags
SZA6044Z Abstract: HEMT marking P 24 lead plastic qfn 4mmX4mm Text: SZA-6044 SZA-6044 5.1GHzto5.9 GHz ¼Watt Power Amplifier with Active Bias 5.1GHzto5.9GHz ¼WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor	Original	PDF	SZA-6044 SZA-6044 DS110714 SZA-6044" SZA6044ZSQ SZA6044ZSR SZA6044Z SZA6044ZPCK-EVB1 SZA6044Z HEMT marking P 24 lead plastic qfn 4mmX4mm
ATC100B150JT Abstract: rfmd envelope tracking Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power>240W Advanced Heat Sink Technology RF IN	Original	PDF	RFG1M09180 700MHZ 1000MHZ RFG1M09180 RF400-2 865MHz 960MHz 47dBm ATC100B150JT rfmd envelope tracking
RF9810 Abstract: rf98 Text: RF9810 QUAD BAND GPRS/LINEAR EDGE + 3.2V TDSCDMA MULTI-MODE TRANSMIT MODULE RFIN HB     +25dBm Output Power TD-SCDMA High Efficiency at Rated POUT VBATT =3.5V GSM850/EGSM900=41% DCS1800/PCS1900=38% Integrated VBATT Tracking Circuit for Improved Switching Spectrum	Original	PDF	RF9810 63mmx5 24mmx1 B34/39 25dBm GSM850/EGSM900 DCS1800/PCS1900 RF9810TR13 RF9810TR7 EIA-481. RF9810 rf98
Untitled Abstract: No abstract text available Text: RF9810 QUAD BAND GPRS/LINEAR EDGE + 3.2V TDSCDMA MULTI-MODE TRANSMIT MODULE RFIN HB +25dBm Output Power TD-SCDMA  Proven PowerStar Architecture   Integrated Power Flattening Circuit for Lower Power Variation under Mismatch Conditions  Integrated VBATT Tracking Circuit	Original	PDF	RF9810 GSM850/EGSM900 DCS1800/PCS1900 RF716x RF9801/2 EIA-481. GSM850/EGSM900/DCS1800/PCS1900 RF9810SB RF9810PCBA-41X