fr 3707 z
Abstract: AN765 AN792 JESD51-7 MCP1801 5. VOUT 3. GND 4. VIN SOT-23-5 LDO
Text: MCP1801 150 mA高 PSRR、低静态电流 LDO 特性 概述 • 150 mA 最大输出电流 • 低压差 （Low Drop Out， LDO）为 200 mV （典 型值） @ 100 mA • 25 µA 静态电流 （典型值） • 0.01 µA 关断电流 （典型值） • 输入工作电压范围： 2.0V 至 10.0V
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MCP1801
MCP1801CMOS
OT-23-5
AN765
DS00765A
fr 3707 z
AN765
AN792
JESD51-7
MCP1801
5. VOUT 3. GND 4. VIN SOT-23-5 LDO
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oT-33
Abstract: AN765 AN792 JESD51-7 MCP1802 EEPROM SOT-23-5
Text: MCP1802 300 mA高 PSRR、低静态电流 LDO 特性 概述 • 300 mA 最大输出电流 • 低压差 （LDO）为 200 mV （典型值） @ 100 mA MCP1802系列是采用CMOS工艺制造的低压差（LDO） 稳压器，它可以提供最高 300 mA 的电流，而其静态电
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MCP1802
MCP1802CMOS
OT-23-5
AN765
DS00765A
oT-33
AN765
AN792
JESD51-7
MCP1802
EEPROM SOT-23-5
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RVH MSOP8
Abstract: TC1014 AN41 TC1070 AN41 LP2980 MIC5205 TC1070 TC1071 Microchip MSOP8
Text: AN41 Using Microchip’s Micropower LDOs Author: Paul Paglia, Microchip Technology, Inc. VIN + CIN 1µF – INTRODUCTION Microchip Technology, Inc.’s family of micropower LDOs utilizes low-voltage CMOS process technology. These LDOs provide similar ripple rejection and dropout characteristics as their bipolar
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DS00765A
RVH MSOP8
TC1014 AN41
TC1070 AN41
LP2980
MIC5205
TC1070
TC1071
Microchip MSOP8
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AN765
Abstract: No abstract text available
Text: AN765 Using Microchip's Micropower LDOs Author: Paul Paglia, Microchip Technology, Inc. VIN CIN 1µF – INTRODUCTION Microchip Technology, Inc.’s family of micropower LDOs utilizes low-voltage CMOS process technology. These LDOs provide similar ripple rejection and dropout characteristics as their bipolar
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AN765
DS00765A*
0765A-page
AN765
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AN765
Abstract: LP2980 MIC5205 TC1070 TC1071 X5050
Text: AN765 Using Microchip's Micropower LDOs Author: Paul Paglia, Microchip Technology, Inc. VIN CIN 1µF – INTRODUCTION Microchip Technology, Inc.’s family of micropower LDOs utilizes low-voltage CMOS process technology. These LDOs provide similar ripple rejection and dropout characteristics as their bipolar
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AN765
D-81739
DS00765A*
DS00765A-page
AN765
LP2980
MIC5205
TC1070
TC1071
X5050
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