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    DS 69 Search Results

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    DS 69 Price and Stock

    Rochester Electronics LLC FDS6986S

    MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
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    DigiKey FDS6986S Bulk 133,744 606
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    Rochester Electronics LLC FDS6984S

    MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDS6984S Bulk 117,731 201
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    Rochester Electronics LLC FDS6912

    MOSFET 2N-CH 30V 6A 8SOIC
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    DigiKey FDS6912 Bulk 64,050 333
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    FDS6912 Bulk 19,873 333
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    Rochester Electronics LLC FDS6993

    MOSFET 2P-CH 30V/12V 4.3A 8SOIC
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    DigiKey FDS6993 Bulk 10,200 296
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    onsemi FDS6912A

    MOSFET 2N-CH 30V 6A 8SOIC
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    DigiKey FDS6912A Reel 10,000 2,500
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    Avnet Americas FDS6912A Reel 11 Weeks 2,500
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    Newark FDS6912A Cut Tape 5
    • 1 $0.739
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    FDS6912A Reel 2,500
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    Bristol Electronics FDS6912A 85 8
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    TME FDS6912A 2,346 1
    • 1 $0.715
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    Richardson RFPD FDS6912A 2,500
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    Avnet Asia FDS6912A 11 Weeks 2,500
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    Avnet Silica FDS6912A 12 Weeks 2,500
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    EBV Elektronik FDS6912A 13 Weeks 2,500
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    Flip Electronics FDS6912A 95,000
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    Master Electronics FDS6912A 2,500
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    New Advantage Corporation FDS6912A 10,000 1
    • 1 $4.1
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    Find more DS 69 price and stock on Findchips.com

    DS 69 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MIL-W-85

    Abstract: WR340 half height flange wr 2300 flange waveguide GSK90-1-S GASKET Waveguide Gaskets WR340 waveguide directional coupler wr 90 directional coupler wr 2300 waveguide RCC42 wr 90 x band flange waveguide
    Text: • RECTANGULAR WAVEGUIDE SECTION CONTENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DS-101 DS-102 DS-103 DS-104 DS-105 DS-106 DS-107 DS-108 DS-109 DS-110 DS-111 Directional Couplers . .


    Original     		DS-101 DS-102 DS-103 DS-104 DS-105 DS-106 DS-107 DS-108 DS-109 DS-110 MIL-W-85 WR340 half height flange wr 2300 flange waveguide GSK90-1-S GASKET Waveguide Gaskets WR340 waveguide directional coupler wr 90 directional coupler wr 2300 waveguide RCC42 wr 90 x band flange waveguide PDF

    12CN10L

    Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG
    Text: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPS12CN10L IPP12CN10L PG-TO220-3 PG-TO251-3-11 12CN10L 12CN10L D345 JESD22 PG-TO220-3 10069a IPP12CN10LG PDF

    12CN10L

    Abstract: D345 c25 diode to220 D83a
    Text: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPS12CN10L IPP12CN10L PG-TO220-3 12CN10L PG-TO251-3 12CN10L D345 c25 diode to220 D83a PDF

    TDA 11115

    Abstract: ALI 3105 TCM3105 "64-pin" rockwell modem rc2324 TDA 2025 IA4054 RC2424DP tda 12004 1650M
    Text: RC2424DP/DS Integral Modems Rockwell RC2424DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2424DP/DS is a 2400 bps, full-duplex, OEM, data pump modem device set. The RC2424DP/DS operates over the public switched telephone network


    OCR Scan     		RC2424DP/DS RC2424DP/DS 64-pin 68-pin 40-pin 44-pin 64-Pln TDA 11115 ALI 3105 TCM3105 "64-pin" rockwell modem rc2324 TDA 2025 IA4054 RC2424DP tda 12004 1650M PDF

    Untitled

    Abstract: No abstract text available
    Text: RC2324DP/DS Integral Modems Rockwell RC2324DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2324DP/DS is a 2400 bps, lull-duplex, OEM, data pump modem device s e t The RC2324DP/DS operates over the public switched telephone network


    OCR Scan     		RC2324DP/DS RC2324DP/DS 212Aand character38 64-Pin 40-Pin PDF

    DS3319

    Abstract: SM-43T pl-7 DS30 DS40 PC05 PC30 PL-11 PL-13 PC2213H
    Text: 84 SAMWHA ELECTRONICS POT CORES DS30~DS40 PC05~PC30 Ordering Code System PL-9 Material Core Type DS 4020 Core Size SAMWHA ELECTRONICS DS CORES DS3019D Part No. Type D2 D1 Dimensions in mm Core Set Parameters DS DS A 30.00 ±0.50 31.20 ±0.30 33.20 ±0.50 33.20 ±0.50


    Original     		DS3019D DS3119W DS3314W DS3319D 80min. 20min. PL-11 PL-13 PL-15 DS3319 SM-43T pl-7 DS30 DS40 PC05 PC30 PL-11 PL-13 PC2213H PDF

    025n10n

    Abstract: IPB025N10N3 IPB025N10N3 G IEC61249-2-21 JESD22
    Text: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability


    Original     		IPB025N10N3 IEC61249-2-21 PG-TO263-7 025N10N 025n10n IPB025N10N3 G IEC61249-2-21 JESD22 PDF

    J 6920 A

    Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A J 6920 06CN10N JESD22 PG-TO220-3 PDF

    053N08N

    Abstract: IPD053N08N3 IPD053N08N3 G JESD22 d90a
    Text: IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 5.3 mΩ ID 90 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPD053N08N3 IPD06CN08N PG-TO252-3 053N08N 053N08N IPD053N08N3 G JESD22 d90a PDF

    IEC61249-2-21

    Abstract: IPP06CNE8N JESD22 PG-TO220-3
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3 PDF

    06cn10n

    Abstract: J 6920 A J 6920 mJ 6920 IPP06CN10N JESD22 PG-TO220-3 IPP06CN10NG
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N 06cn10n J 6920 A J 6920 mJ 6920 JESD22 PG-TO220-3 IPP06CN10NG PDF

    025N10N

    Abstract: IPB025N10N3 IPB025N10N3 G JESD22
    Text: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability


    Original     		IPB025N10N3 PG-TO263-7 025N10N 025N10N IPB025N10N3 G JESD22 PDF

    06cn10n

    Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 06cn10n 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220 PDF

    027N10N

    Abstract: IPB027N10N3 IEC61249-2-21 JESD22
    Text: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPB027N10N3 IEC61249-2-21 PG-TO263-3 027N10N 027N10N IEC61249-2-21 JESD22 PDF

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3 PDF

    06CNE8N

    Abstract: No abstract text available
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N PDF

    06CN10N

    Abstract: IPP06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG PDF

    J 6920 A

    Abstract: ds 1-08 diode J 6920 06cn10n IPP06CN10N JESD22 PG-TO220-3
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A ds 1-08 diode J 6920 06cn10n JESD22 PG-TO220-3 PDF

    075n15n

    Abstract: 072N15N infineon 075n15n IPB072N15N3 IPP075N15N3G IPP075N15N3 G IPP075N15N3 IPI075N15N3 G JESD22 PG-TO220-3
    Text: IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max (TO263) 7.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB072N15N3 IPP075N15N3 IPI075N15N3 PG-TO263-3 PG-TO220-3 PG-TO262-3 072N15N 075n15n 072N15N infineon 075n15n IPP075N15N3G IPP075N15N3 G IPI075N15N3 G JESD22 PG-TO220-3 PDF

    045n10n

    Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
    Text: IPA045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA045N10N3 PG-TO220-FP 045N10N 045n10n 045N10 045n1 JESD22 DD-50 PDF

    J 6920

    Abstract: J 6920 A
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 J 6920 J 6920 A PDF

    Diode DD100

    Abstract: 900N20N 900N20NS
    Text: Type BSC900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level V DS 200 V R DS on ,max 90 mΩ 15.2 ID A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on)


    Original     		BSC900N20NS3 IEC61249-2-21 900N20NS Diode DD100 900N20N 900N20NS PDF

    12CN10N

    Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10
    Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10 PDF

    diode d39

    Abstract: d39 marking 190N12NS IEC61249-2-21 JESD22
    Text: BSC190N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 120 V • N-channel, normal level R DS on ,max 19 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 44 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature


    Original     		BSC190N12NS3 IEC61249-2-21 190N12NS diode d39 d39 marking 190N12NS IEC61249-2-21 JESD22 PDF