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    IPS12CN10L Price and Stock

    Infineon Technologies AG IPS12CN10LGBKMA1

    MOSFET N-CH 100V 69A TO251-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPS12CN10LGBKMA1 Tube
    • 1 -
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    Infineon Technologies AG IPS12CN10LG

    IPS12CN10 - Power Field-Effect Transistor, 69A, 100V, N-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPS12CN10LG 43 1
    • 1 $0.875
    • 10 $0.875
    • 100 $0.8225
    • 1000 $0.7438
    • 10000 $0.7438
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    IPS12CN10L Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPS12CN10L G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.0 mOhm; RDS (on) (max) (@4.5V): 15.8 mOhm; ID (max): 69.0 A; Original PDF
    IPS12CN10LGBKMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 69A TO251-3-11 Original PDF

    IPS12CN10L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12CN10L

    Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG
    Text: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPS12CN10L IPP12CN10L PG-TO220-3 PG-TO251-3-11 12CN10L 12CN10L D345 JESD22 PG-TO220-3 10069a IPP12CN10LG

    12CN10L

    Abstract: D345 c25 diode to220 D83a
    Text: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPS12CN10L IPP12CN10L PG-TO220-3 12CN10L PG-TO251-3 12CN10L D345 c25 diode to220 D83a

    PG-TO251-3-1

    Abstract: 12CN10L
    Text: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12 mW ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPS12CN10L IPP12CN10L PG-TO220-3 12CN10L PG-TO251-3-11 PG-TO251-3-1 12CN10L

    Untitled

    Abstract: No abstract text available
    Text: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max 12 mW ID 69 A • 175 °C operating temperature


    Original     		PDF IPS12CN10L IPP12CN10L PG-TO220-3 PG-TO251-3-11 12CN10L

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP