dro 10 ghz
Abstract: No abstract text available
Text: DRO Phase Lock Oscillators 0.5 to 18GHz The content of this specification may change without notification 10/01/09 Oscillators Coaxial DRO Phase Lock Oscillator 4 to 18GHz DRO Phase Lock Oscillator Freq. Power Phase Noise Range Output GHz (dBm) Fre q. @1
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18GHz
dro 10 ghz
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PN9255
Abstract: PN9220-00 PN9000 pn9200 PN9230 PN9240 PN9250 PN9710 phase detector 10 khz crystal oscillator 42 MHz
Text: Tommorrow’s Phase Noise Testing Today MICROWAVE OUTPUT PN9000 AUTOMATED PHASE NOISE MEASUREMENT SYSTEM DOWNCONVERTER SERIES MICROWAVE OSCILLATORS DUT INPUT 1.7 TO 18.5 GHZ DRO LOCKED -10 dBm Min TIME BASE REF LOCKED 10 MHz IN Fc TUNE PN9250 PN9255 PN9240
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PN9000
PN9250
PN9255
PN9240
PN9230
20dBm
PN9220-00
PN9210-00
PN9250-00
PN9255
PN9220-00
pn9200
PN9230
PN9240
PN9250
PN9710
phase detector 10 khz
crystal oscillator 42 MHz
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resonator B69500-A9107 siemens
Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
Text: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active
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BFP405
resonator B69500-A9107 siemens
microwave transistor siemens
B69500-A9107
BFP405
x-band dro
MMIC A04
mtt siemens
SIEMENS BFP405
Siemens Microwave
blocking oscillator uses
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FMCW Radar
Abstract: fmcw FMCW Radar Module 77 ghz FMCW radar 77 ghz W-band W-BAND radar mmic FMCW circuit TLC Precision Wafer Technology 77 ghz FMCW radar
Text: W-BAND LOWKa-Band NOISE MM-W AVEMixer SOURCE MODULE MMIC TLC-SM38/77 • 75 to 80 GHz • Output Power > 10 mW • Phase Noise - 90 dBc/Hz @ 100 kHz DESCRIPTION AND APPLICATIONS TLC’s Low Phase Noise W-Band Source Module utilizes TLC’s 38.5 GHz DRO -110 dBc/Hz and
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TLC-SM38/77
FMCW Radar
fmcw
FMCW Radar Module
77 ghz FMCW
radar 77 ghz
W-band
W-BAND radar mmic
FMCW circuit
TLC Precision Wafer Technology
77 ghz FMCW radar
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dro 10 ghz
Abstract: No abstract text available
Text: 40 26.55 GHz VOLTAGE TUNED DRO O S C I L L AT O R S SPECIAL FEATURES • Low Phase Noise: - 85 dBc/Hz @ 10 kHz offset • Good Power Flatness: Less than ± 0.5 dB, typical • Wide Operating Temperature: - 35 to + 75 °C • Phase Locking Capability This Voltage Tuned Dielectric Resonator Oscillator
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Untitled
Abstract: No abstract text available
Text: Sources K EY SPECIFICATIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti
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MIL-E-5400
MIL-E-16400
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Untitled
Abstract: No abstract text available
Text: K EY SPECIFICA TIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti nent specifications are discussed below.
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MIL-E-5400
MIL-E-16400
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dro 10 ghz
Abstract: Schematic diagram of DRO
Text: HMC-C200 v05.0510 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 116 mA Internal Voltage Regulator Internal Buffer Amplifier
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HMC-C200
HMC-C200
dro 10 ghz
Schematic diagram of DRO
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DIELECTRIC RESONATOR OSCILLATOR 8-18 GHZ
Abstract: F5120 dro 10 ghz general microwave M5180 M5120
Text: Catalog D K C jk Over the past decade, the DRO has become the oscillator of choice for fixed-frequency applications requiring high stabil ity and low phase noise. General Microwave offers a highperformance line of DROs in the 5-18 GHz frequency range featuring 1.5 ppm/°C frequency stability over a wide tempera
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F5080
M5080
F5120
M5120
F5180
M5180
DIELECTRIC RESONATOR OSCILLATOR 8-18 GHZ
F5120
dro 10 ghz
general microwave
M5180
M5120
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Untitled
Abstract: No abstract text available
Text: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features DROs - Connectorized Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 116 mA Internal Voltage Regulator Internal Buffer Amplifier
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HMC-C200
HMC-C200
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dielectric resonator oscillator
Abstract: No abstract text available
Text: HMC-C200 v00.0509 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -124 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 125 mA Internal Voltage Regulator Internal Buffer Amplifier
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HMC-C200
HMC-C200
dielectric resonator oscillator
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Untitled
Abstract: No abstract text available
Text: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features DROs - COnneCtORizeD tuning Frequency: 8.0 - 8.3 GHz Low ssB Phase noise: -122 dBc/Hz @ 10 kHz Offset single Positive supply: +6 to +15V @ 116 mA internal Voltage Regulator internal Buffer Ampliier
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HMC-C200
HMC-C200
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Untitled
Abstract: No abstract text available
Text: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features DROs - Connectorized Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 116 mA Internal Voltage Regulator Internal Buffer Amplifier
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HMC-C200
HMC-C200
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Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640
Abstract: Dielectric Resonator Oscillator at 11.92GHz BFP640 dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit
Text: 11.92 GHz DRO Silicon Discretes Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Description 3 Infineon’s BFP640 is a high-performance, low-cost Silicon-Germanium bipolar transistor housed in a 4-lead SOT-343 surface mount package. With a transition
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92GHz
BFP640
BFP640
OT-343
OT343
Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640
Dielectric Resonator Oscillator at 11.92GHz
dielectric resonator
VPS05605
BFP640 noise figure
fet dro 10 ghz
fet dro
RF TRANSISTOR 10 GHZ low noise
diagram radar circuit
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Untitled
Abstract: No abstract text available
Text: HMC-C200 v03.1009 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 125 mA Internal Voltage Regulator Internal Buffer Amplifier
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HMC-C200
HMC-C200
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Dielectric resonator oscillator
Abstract: No abstract text available
Text: HMC-C200 v00.0509 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Customizable Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -124 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 125 mA Internal Voltage Regulator Internal Buffer Amplifier
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HMC-C200
HMC-C200
Dielectric resonator oscillator
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design DRO
Abstract: dro 10 ghz Pldro
Text: LOW NOISE PHASE LOCKED DRO 37 SPECIAL FEATURES This PLDRO uses two phase lock loops for good phase noise performance. The 6.6 GHz DRO, which drives the far-out noise levels, is phase locked to an internal 110 MHz PLXO, which drives the moderately close-in
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HP5351B
Abstract: HP8510A HP8514A HP8350B
Text: CUSTOM PRODUCTS RESOMICS - DESIGN CONSIDERATIONS tfn I. DIMENSIONAL Material Diameter R U Dr x f0=57.8 Dr x fo=52.8 0.44 0.44 Lr/Dr Ratio NOTE 1: The value of Dr x fo is accurate under the following condition: a. Dr, Lr in m illim eter and fo in GHz. b. Resomics is positioned at the center of cavity and Do/Dr=Lo/Lr=3.
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Untitled
Abstract: No abstract text available
Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high
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CFY35
CFY35
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transistor s2p
Abstract: design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10 CFY35
Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high
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CFY35
CFY35
transistor s2p
design DRO
TRANSISTOR C 2 SUB
MA 2129
design dielectric resonator oscillator
s2p 100
Dielectric Resonator Oscillator DRO
CFY 18
CFY 10
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x-band dro
Abstract: Dielectric Resonator Oscillator DRO HMC-C200 HMC698LP5 hmc698 design DRO dielectric resonator oscillator radar sensor x-band accuracy X-band low noise amplifiers
Text: HITTITE LAUNCHES INDUSTRY LEADING COMMERCIAL DRO PRODUCT LINE Miniature, High Stability Commercial DRO Module Offers Ultra Low Phase Noise O scillators are the fundamental element of microwave communication and sensor systems, from radar or optical telecom to test
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HMC-C200
HMC-C200
x-band dro
Dielectric Resonator Oscillator DRO
HMC698LP5
hmc698
design DRO
dielectric resonator oscillator
radar sensor
x-band accuracy
X-band low noise amplifiers
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Untitled
Abstract: No abstract text available
Text: FOUR-CHANNEL DOWNCONVERTER MODEL: D C-04-04000800-01600260 FEATURES • • • • • • • • • • • • • • • High reliability spaceborne application RF input frequency. 4-8 GHz IF output frequency. 1.6-2.6 GHz
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C-04-04000800-01600260
MIL-STD-810B
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design DRO
Abstract: Anzac Electronics Dielectric Resonator Oscillator DRO anzac doubler d-5-4 DO120 Adams-Russell fet dro 10 ghz anzac doubler design dielectric resonator oscillator shunt feedback dro
Text: FREQUENCY GENERATION SELECTION GUIDE MODEL NO. FREQUENCY INPUT OUTPUT MHz (MHz) CONVERSION LOSS (dB) TYP SPURIOUS F1 (dB) TYP REJECTION F3 (dB) TYP VSWR TYP CASE1 STYLE PAGE NO. 1.7:1 2.0:1 1.8:1 1.8:1 1.7:1 1.8:1 2.0:1 C-5 RH-3 C-5 C-5 FP-3 C-5 FP-2 467
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FM-102-4
FM-104
FM-106
DO-100
DO-120
DO-130
10KHz
design DRO
Anzac Electronics
Dielectric Resonator Oscillator DRO
anzac doubler d-5-4
DO120
Adams-Russell
fet dro 10 ghz
anzac doubler
design dielectric resonator oscillator
shunt feedback dro
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crystal oscillator 12 Ghz
Abstract: Dielectric Resonator Oscillator DRO remec oscillator
Text: REMEC 3.0 to 21.0 GHz Dielectric Resonator Oscillator DRO MDR 5100 Series Phase Locked Internal Reference Specifications : (1) Frequency Range: (2) Mechanical Tuning Bandwidth (min.)(3) Stability (max.)(4) Pushing (max.) Harmonics (max.) Spurious (max.)
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