DRAM 512MB Search Results

DRAM 512MB Result Highlights (5)

Part	Manufacturer	Description
TMS4030JL	Rochester Electronics LLC	TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22
4164-15FGS/BZA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA)
4164-12JDS/BEA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA)
4164-15JDS/BEA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA)
UPD48011318FF-FH16-FF1-A	Renesas Electronics Corporation	Low Latency DRAM, T-LBGA, /Tray

DRAM 512MB Price and Stock

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ADLINK Technology Inc SDRAM 144P PC133 512MB ADLINK Technology SDRAM PC133, 512MB, 32Mx16, SO-DIMM 144P, 3.3V, Rank:1, CL3, Non-ECC, OP Temp:0-70, Fix Die:Yes(J-die), PROMOS chip(32Mx16)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SDRAM 144P PC133 512MB					1 $159.42 10 $154.49 100 $146.34 1000 $146.34 10000 $146.34	Get Quote

DRAM 512MB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
xdr rambus Abstract: xdr elpida Text: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are	Original	PDF	8x16Mx4 512Mb DL-0211 xdr rambus xdr elpida
3654P Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable	Original	PDF	16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
K4Y50164UE Abstract: XDR DRAM XDR Rambus Rambus XDR 256Mx2 Samsung EOL K4Y50024UE-JC samsung memory q406 Text: XDRTM DRAM General Information XDRTM DRAM Product Guide Revision 0.5 Mar. 2006 Change History Revision 0.1 August ′03 - First Copy Revision 0.2 (Dec ′04) - Add C-die, D-bin Revision 0.3 (Mar ′05) - Add 512Mb XDR DRAM Revision 0.4 (Dec ′05) - Delete code 17 in organization	Original	PDF	512Mb K4Y50044UC-JC K4Y50084UC-JC 128Mx4 64Mx8 K4Y50084UE-JC 104ball 32K/16ms K4Y50164UE XDR DRAM XDR Rambus Rambus XDR 256Mx2 Samsung EOL K4Y50024UE-JC samsung memory q406
XDR 1gb Abstract: XDR DRAM 80nm dram Text: Rev. 0.0, Dec.2009 1Gb XDR features comparison with 512Mb A guide for user to use XDR DRAM Rev.0.0 1. XDR DRAM features comparison [Table 1] XDR DRAM features information table Comparison 512Mb E-die 1Gb E-die VDD 1.8V 1.5V Process 80nm 56nm Org X16/X8/X4/X2	Original	PDF	512Mb 512Mb X16/X8/X4/X2 X32/X16 XDR 1gb XDR DRAM 80nm dram
104BA Abstract: No abstract text available Text: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary	Original	PDF	K4Y5002 512Mbit dev37 104BA
MT4LSDT1664HI133 Abstract: MT48LC16M32 MT4LSDT1664HI MT8LSDT6464HI-133 MEG32 MT48LC8M32 MT48LC4M32B2F5 MT48LC4M32LFF5 MT46V64M8FN MT8LSDT6464HI Text: Industrial Temperature DRAM Micron’s Industrial Temperature DRAM For Ultimate Performance Under Extreme Conditions For products operating at temperatures ranging from -40°C to +85°C, Micron Technology’s extensive line of industrial temperature IT DRAM provides	Original	PDF
samsung eMMC 4.5 Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2 Text: Samsung Mobile Memory Taking Mobility to New Storage Horizons Mobile DRAM \| Multi-Chip Packages \| eMMC Samsung Mobile Memory Mobile DRAM The future of Mobile DRAM Performance and battery life are the key metrics upon which mobile electronics are measured. Samsung Mobile	Original	PDF	BRO-09-DRAM-001 samsung eMMC 4.5 eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	PDF	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
MT8LSDT3264HI-133 Abstract: PC133 tsop 8X14 MT48LC16M16A2TG MT48LC4M32B2TG MT48LC4M32B2F5 MT48H32M16LF MT48LC8M32B2 MT48LC2M32B2TG MT48LC32M8A2TG Text: Industrial Temperature DRAM Micron’s Industrial Temperature DRAM For Ultimate Performance Under Extreme Conditions For products operating at temperatures ranging from -40°C to +85°C, Micron Technology’s extensive line of industrial temperature IT DRAM provides outstanding performance and proven reliability. We	Original	PDF	256MB MT8LSDT3264HI-133 PC133 tsop 8X14 MT48LC16M16A2TG MT48LC4M32B2TG MT48LC4M32B2F5 MT48H32M16LF MT48LC8M32B2 MT48LC2M32B2TG MT48LC32M8A2TG
edo dram 72-pin simms 64mb Abstract: 168pin dram socket 64mb 72-pin simm 64mb edo dram simm dram 72-pin simms 64mb edo dram 72-pin SO DIMM simm 256mb Text: DRAM Module Product Overview. Preliminary DRAM Module Product Overview Introduction Module Descriptions DRAMs may be supplied on modules known as SIMMs, DIMMs, SO DIMMs or IC DRAM cards. These assemblies are designed in a well-defined industry standard format. There are significant	Original	PDF
k4s510832c Abstract: K4S510832C-KL Text: K4S510832C CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Nov. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations	Original	PDF	K4S510832C 512Mbit A10/AP k4s510832c K4S510832C-KL
RA12 Abstract: No abstract text available Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations	Original	PDF	K4S510832B 512Mbit A10/AP RA12
K4S511632C Abstract: samsung cmos dram 4m x 4 Text: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations	Original	PDF	K4S511632C 512Mbit 16bit A10/AP K4S511632C samsung cmos dram 4m x 4
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	PDF	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

MT29C1G24MADLAJA-6 Abstract: Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 137-Ball MCP NAND sDR mt29c 1g nand DDR mcp Text: Preliminary‡ Micron Confidential and Proprietary 137-Ball NAND Flash with LP-DRAM MCP Features NAND Flash with LP-DRAM 137-Ball Multiple-Chip Package MCP MT29CxGxxMAxxxJA Current Production Part Numbers: Table 1 on page 2 Features Figure 1: • All-Micron NAND Flash and LP-DRAM	Original	PDF	137-Ball MT29CxGxxMAxxxJA 09005aef82ff4431 09005aef82ff448c 137ball MT29C1G24MADLAJA-6 Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 MCP NAND sDR mt29c 1g nand DDR mcp
WEDPN8M72V-133BC Abstract: No abstract text available Text: WEDPN8M72V-133BC 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 133MHz ! Package: The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM	Original	PDF	WEDPN8M72V-133BC 8Mx72 133MHz 64MByte 512Mb) 432-bit WEDPN8M72V-133BC
is42s86400 Abstract: No abstract text available Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION APRIL 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed	Original	PDF	IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-ball IS42S86400B, 11x13mm is42s86400
IS42S16320B Abstract: IS42S86400B Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 JUNE 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed	Original	PDF	IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S16320B IS42S16320B IS42S86400B
IS42S86400B Abstract: No abstract text available Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2011 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge	Original	PDF	IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42S86400B IS42S86400B, IS42/45S16320B 11x13mm
is42s16320 Abstract: No abstract text available Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2010 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge	Original	PDF	IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42S86400B 54LTSOP-2 11x13mm IS42S86400B, IS42/45S16320B is42s16320
Untitled Abstract: No abstract text available Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2008 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed	Original	PDF	IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-baches
HYB18H512322BF Abstract: qimonda hyb18h5 Text: March 2008 IDRD51-0-A1F1C–32C XDR DRAM 512-Mbit XDR DRAM RoHS compliant Data Sheet Rev. 1.0 Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–32C Revision History: 2008-03, Rev. 1.0 Page Subjects major changes since last revision All New Data Sheet	Original	PDF	IDRD51-0-A1F1C 512-Mbit 08312007-N57X-JNTM HYB18H512322BF qimonda hyb18h5
IDRD51-0-A1F1C Abstract: No abstract text available Text: October 2008 IDRD51-0-A1F1C–[32C/40C] XDR DRAM 512-Mbit XDR DRAM RoHS compliant Internet Data Sheet Rev. 1.10 Internet Data Sheet IDRD51-0-A1F1C 512-Mbit XDR DRAM IDRD51-0-A1F1C–[32C/40C] Revision History: 2008-10, Rev. 1.10 Page Subjects major changes since last revision	Original	PDF	IDRD51-0-A1F1C 32C/40C] 512-Mbit IDRD51-0-A1F1C 10292008-600R-IXL7
is42s16320 Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130 Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed	Original	PDF	IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S16320B is42s16320 IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130

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DRAM 512MB Search Results

DRAM 512MB Result Highlights (5)

DRAM 512MB Price and Stock

ADLINK Technology Inc SDRAM 144P PC133 512MB

DRAM 512MB Datasheets Context Search

xdr rambus

3654P

K4Y50164UE

XDR 1gb

104BA

MT4LSDT1664HI133

samsung eMMC 4.5

K8D3216UBC-pi07

MT8LSDT3264HI-133

edo dram 72-pin simms 64mb

k4s510832c

RA12

K4S511632C

RISC-Processor s3c2410

MT29C1G24MADLAJA-6

WEDPN8M72V-133BC

is42s86400

IS42S16320B

IS42S86400B

is42s16320

Untitled

HYB18H512322BF

IDRD51-0-A1F1C

is42s16320