TRAY FBGA 11X13
Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
Text: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S72MS-P
TRAY FBGA 11X13
S72MS512PE0HF94V
MCP NAND sDR
BGA 15X15
137-Ball
MCP NAND DDR
S30MS-P
Spansion NAND Flash
Spansion NAND Flash DIE
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K524G2GACB-A050
Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K524G2GACB-A050
A10/AP
K524G2GACB-A050
samsung "nand flash" derating
K524G2GACB
MCP 256M nand samsung mobile DDR
nand flash DQS
KF94
samsung MCP K5
transistor BA 92 samsung transistor
4gb nand flash
SAMSUNG MCp nand ddr
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WS512S
Abstract: S29WS-S S29WS-P AMAX-16 WS512P WS128P 811-X SA-A11 8x116
Text: Migrating From S29WS-P to S29WS-R and S29WS-S Application Note By: Jan Gatermann, Keith Luo, Rudy Sterner and James Escamilla 1. Introduction Spansion is always seeking to cost reduce its product line. The 65 nm product families, S29WS-R and S29WS-S, continue that tradition while adding improvements such as higher densities, simplified command
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S29WS-P
S29WS-R
S29WS-S
S29WS-R
S29WS-S,
S29WS-S:
WS512S
S29WS-S
AMAX-16
WS512P
WS128P
811-X
SA-A11
8x116
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Untitled
Abstract: No abstract text available
Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2
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S72WS-N
16-bit
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SAMSUNG MCP
Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6
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KAA00BB07M-DGUV
16Mx16)
4Mx16)
4Mx16x4Banks)
256Mb
137-Ball
80x14
SAMSUNG MCP
KAA00BB07M-DGUV
UtRAM Density
samsung nor nand ddr mcp
nand sdram mcp
M/BVS mcp ohm
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S29WS256P
Abstract: S29WS-P S73WS-P
Text: S73WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Mobile SDRAM on Shared Bus S73WS-P based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion
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S73WS-P
S29WS256P
S29WS-P
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512MB NOR FLASH
Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2
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S72WS-N
16-bit
512MB NOR FLASH
BTA160
BGA 130 MCP NAND DDR
S72WS512NFFKFWZ2
Flash MCp nand DRAM 137-ball
ball 128 mcp
NAND FLASH BGA
S29WS256N
S72WS256ND0
S72WS256NDE
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F3F3
Abstract: WS256 bus1
Text: Design-In Scalable Wireless Solutions with Spansion Products Application Note Introduction This application note provides an overview of the standard package line-up for Spansion wireless Multi-Chip Products MCPs . It is intended to provide customers with a seamless package migration path from one product
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MCP 67 MV- A2
Abstract: K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a
Text: Target K5D1G13ACD-D075 MCP MEMORY MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K5D1G13ACD-D075
512Mb
K5D1G13ACD-D075000
SG2002063-01
MCP 67 MV- A2
K5D1G13ACD
SAMSUNG MCP
MCP MEMORY
K5D1G
K5D1G1
K5D1G13
SAMSUNG MCP Qualification Report
137FBGA
k5d1g13a
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NAND FLASH DDP
Abstract: SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density
Text: KBE00F005A-D411 MCP MEMORY MCP Specification 512Mb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KBE00F005A-D411
512Mb
256Mb
137-Ball
80x14
NAND FLASH DDP
SAMSUNG MCP
MCP 256M nand 128M mobile sdram
137FBGA
MCP 67 MV- A2
8188
KBE00F005A
KBE00F005A-D411
MCP NOR FLASH SDRAM
UtRAM Density
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MT29C1G24MADLAJA-6
Abstract: Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 137-Ball MCP NAND sDR mt29c 1g nand DDR mcp
Text: Preliminary‡ Micron Confidential and Proprietary 137-Ball NAND Flash with LP-DRAM MCP Features NAND Flash with LP-DRAM 137-Ball Multiple-Chip Package MCP MT29CxGxxMAxxxJA Current Production Part Numbers: Table 1 on page 2 Features Figure 1: • All-Micron NAND Flash and LP-DRAM
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137-Ball
MT29CxGxxMAxxxJA
09005aef82ff4431
09005aef82ff448c
137ball
MT29C1G24MADLAJA-6
Micron 512MB nand FLASH
MT29C2G24MAKLAJA-6
Micron 512MB nand FLASH mcp
Flash MCp nand DRAM 137-ball
JW190
MCP NAND sDR
mt29c
1g nand DDR mcp
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MT29F2G16AB
Abstract: MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET
Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components
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168-Ball
MT29CxGxxMAxxxxx
09005aef83070ff3
168ball
MT29F2G16AB
MT29C2G24MAKLAJG-6
MT29C4G48
JW256
MT29C2G48MAKLCJI-6
mt29f4g16ab
MT29F4G16A
MT29F2G16ABDHC
mt29c
MT29F2G16ABDHC-ET
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Flash MCp nand DRAM 137-ball
Abstract: DA12A marking PP nand sdram mcp
Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2
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S72WS-N
16-bit
Flash MCp nand DRAM 137-ball
DA12A
marking PP
nand sdram mcp
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qualcomm nand
Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
Text: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KBE00500AM-D437
512Mb
KBE00500AM-D437
SG2002063-01
qualcomm nand
SAMSUNG MCP
KBE00500AM
NAND FLASH DDP
MCP Specification
UtRAM Density
2gb nand mcp
137FBGA
SAMSUNG 256Mb NAND Flash Qualification Reliability
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TCMS
Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
Text: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S72WS256N
16M/32M
16-bit)
16-bit
TCMS
S29WS-N
S72WS256ND0
S72WS256NDE
S72WS256NEE
225 J 250 AVA CL 20
JEP95
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TCMS
Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION
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S73WS256N
32M/16M
16-bit)
16-bit
S72WS256N
TCMS
TRANSISTOR BFW 11 pin diagram
marking code qa1 148
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S73WS256N
Abstract: WS128N SA173
Text: S73WS256N based MCPs Stacked Multi-Chip Product MCP 256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Address/Data Bus ADVANCE Distinctive Characteristics
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S73WS256N
32M/16M
16-bit)
16-bit
S73WS
WS128N
SA173
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SAMSUNG MCP
Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
Text: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0
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KBE00D002M-F407
16Mx16)
2Mx16x4Banks)
128Mb
137-Ball
80x14
SAMSUNG MCP
F407
KBE00D002M-F407
samsung "nor flash" sensing
UtRAM Density
137FBGA
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N1056
Abstract: 2g nand mcp bsc nm 1st year S30MS-P 3g hsdpa signal Schematic Diagram S30MS01GP spansion ms nand flash format h.264
Text: S30MS-P ORNANDTM Flash Family S30MS01GP, S30MS512P 1 Gb/512 Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology Data Sheet Preliminary S30MS-P ORNANDTM Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S30MS-P
S30MS01GP,
S30MS512P
Gb/512
x8/x16,
N1056
2g nand mcp
bsc nm 1st year
3g hsdpa signal Schematic Diagram
S30MS01GP
spansion ms nand flash
format h.264
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137-Ball
Abstract: S30MS-P N1056 MS512P
Text: S30MS-P ORNANDTMFlash Family S30MS01GP, S30MS512P 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology S30MS-P ORNANDTMFlash Family Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion
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S30MS-P
S30MS01GP,
S30MS512P
1Gb/512Mb,
x8/x16,
137-Ball
N1056
MS512P
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Dba1 battery
Abstract: Spansion NAND Flash DIE 137-Ball nand flash pcb layout design Flash MCp nand DRAM 137-ball NOR Flash XIP ws512P Satellite A25 NWP date code
Text: Design-In Scalable Wireless Solutions with Spansion Products Application Note Introduction This application note provides an overview of the standard package line-up for Spansion wireless Multi-Chip Products MCPs . It is intended to provide customers with a seamless package migration path from one product
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Untitled
Abstract: No abstract text available
Text: S72WS-R based MCP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode MirrorBit NOR Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-R based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion
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S72WS-R
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numonyx 106 ball
Abstract: strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18
Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 512-Mbit LX Family with LPSDRAM (x32) Datasheet Product Features Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration — 32-bit bus width
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L18/L30
512-Mbit
256-Mbit
32-bit
16-Mbit
x32SH
x16SB
x16/x32
numonyx 106 ball
strataflash 512mbit
strataflash 512 p33
512mbit
numonyx 107-ball
512-Gbit
Numonyx StrataFlash M18
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DA12A
Abstract: No abstract text available
Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2
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S72WS-N
16-bit
DA12A
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