6480A6EGM4G09TB
Abstract: No abstract text available
Text: 8M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 6480A6EGM4G09TB 168 Pin 8Mx64 EDO DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description Pin# The module is a 8Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 8Mx8 (TSOP) DRAM
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6480A6EGM4G09TB
8Mx64
DS964-1
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Untitled
Abstract: No abstract text available
Text: 8M x 64 Bit 3.3V BUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 6480AsEDM4G10TK 168 Pin 8Mx64 EDO DIMM Buffered, 4k Refresh, 3.3V Pin Assignment General Description The 6480AsEDM4G10TK is a 8Mx64 bit, 10 chip, 3.3V, 168 Pin DIMM module consisting of (8) 8Mx8
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6480AsEDM4G10TK
8Mx64
DS531-1
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Untitled
Abstract: No abstract text available
Text: 8M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 6480AsEGM4G09TJ 168 Pin 8Mx64 EDO DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 6480AsEGM4G09TJ is a 8Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 8Mx8
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6480AsEGM4G09TJ
8Mx64
DS465-3
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2a27
Abstract: 23A13 2464Y 41A32 443A
Text: 16M x 64 Bit 3.3V BUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 6416AsEDM4G18TK 168 Pin 16Mx64 EDO DIMM Buffered, 4k Refresh, 3.3V Pin Assignment General Description The 6416AsEDM4G18TK is a 16Mx64 bit, 18 chip, 3.3V, 168 Pin DIMM module consisting of (16)
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6416AsEDM4G18TK
16Mx64
DS531-0
2a27
23A13
2464Y
41A32
443A
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DS465
Abstract: 16Mx64 DIMM 1998
Text: 16M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 6416AsEGM4G17TL 168 Pin 16Mx64 EDO DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 6416AsEGM4G17TL is a 16Mx64 bit, 17 chip, 3.3V, 168 Pin DIMM module consisting of (16)
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6416AsEGM4G17TL
16Mx64
DS465-1
DS465
DIMM 1998
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HYM5V72A1604
Abstract: No abstract text available
Text: HYM5V72A1604 F-Series Unbuffered 16Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 4K/8K-Refresh DESCRIPTION The HYM5V72A1604 is a 16M x 72-bit EDO mode CMOS DRAM module consisting of eighteen 8Mx8 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
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HYM5V72A1604
16Mx72
72-bit
2048-bit
HYM5V72A1604F
HYM5V72A1604FG
HYM5V72A1604TFG
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Untitled
Abstract: No abstract text available
Text: HYM5V72A804A H-Series Buffered 8Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 3.3V, 4K/8K-Refresh DESCRIPTION The HYM5V72A804A H-Series is a 8Mx72-bit EDO mode CMOS DRAM module consisting of nine 8Mx8 TSOP and 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.1µF and
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HYM5V72A804A
8Mx72
8Mx72-bit
16-bit
HYM5V72A804AH
HYM5V72A804ATHG
HYM5V72A804ASLTHG
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Untitled
Abstract: No abstract text available
Text: HYM5V64804A F-Series Unbuffered 8Mx64 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, 3.3V, 4K/8K-Refresh DESCRIPTION The HYM5V64804A F-Series is a 8Mx64-bit EDO mode CMOS DRAM module consisting of eight 8Mx8 TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
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HYM5V64804A
8Mx64
8Mx64-bit
2048-bit
HYM5V64804AF
128ms
cycle/64ms)
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Dram 168 pin EDO 8Mx8
Abstract: No abstract text available
Text: «HYUNDAI • HYM5V64804 F-Series Unbuffered 8Mx64 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, 4K/BK-Refresh DESCRIPTION The HYM5V64804 is a 8M x 64-bit EDO mode CMOS DRAM module consisting of eight 8Mx8 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1uF and 0.01 nF
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HYM5V64804
8Mx64
64-bit
2048-bit
HYM5V64804F
54jMW
HYM5V648Q4FG
HYM5V64804TFG
Dram 168 pin EDO 8Mx8
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Untitled
Abstract: No abstract text available
Text: HYM5V72A804A H-Series Buffered 8Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 3.3V, 4K/8K-Refresh DESCRIPTION The HYM5V72A804A H-Series is a 8Mx72-bit EDO mode CMOS DRAM module consisting of nine 8Mx8 TSOP and 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.1µF and
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HYM5V72A804A
8Mx72
8Mx72-bit
16-bit
HYM5V72A804AH
cycle/64ms)
HYM5V72A804ATHG
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Untitled
Abstract: No abstract text available
Text: HYM5V72A804A F-Series Unbuffered 8Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 3.3V, 4K/8K-Refresh DESCRIPTION The HYM5V72A804A F-Series is a 8Mx72-bit EDO mode CMOS DRAM module consisting of nine 8Mx8 TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
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HYM5V72A804A
8Mx72
8Mx72-bit
2048-bit
HYM5V72A804AF
128ms
cycle/64ms)
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PDF
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Dram 168 pin EDO 8Mx8
Abstract: No abstract text available
Text: -« H Y U N D A I • HYM5V64804 H-Series Buffered 8Mx64 btt CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, 4K/BK-Refresh DESCRIPTION The HYM5V64804 is a 8M x 64-bit EDO mode CMOS DRAM module consisting of eight 8Mx8 SOJ or TSOP and 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.1 (iF and
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HYM5V64804
8Mx64
64-bit
16-bit
HYM5V64804H
89JMAX
HYM5V64804HG
HYM5V64804SLHG
HYM5V64804THG
Dram 168 pin EDO 8Mx8
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Untitled
Abstract: No abstract text available
Text: -« Y U N D ftl • HYM5V72A804 F-Series Unbuffered 8Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 4K/8K-Refresh DESCRIPTION The HVM5V72A804 is a 8M x 72-bit EDO mode CMOS DRAM module consisting of nine 8Mx8 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 (aF decoupling
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OCR Scan
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HYM5V72A804
8Mx72
HVM5V72A804
72-bit
2048-bit
HYM5V72A804F
a05fil
HYM5V72A804FG
HYM5V72A804TFG
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Rv03
Abstract: No abstract text available
Text: - « Y U N P f t l • H Y M 5 V 6 4 1 6 0 4 F - S e r ie s Unbuffered 16Mx64 bit CMOS ORAM MODULE based on 8Mx8 DRAM, EDO, 4K/8K-Refresh DESCRIPTION The HYM 5V641604 is a 16M x 64-bit EDO mode CM OS DRAM module consisting of sixteen 8Mx8 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1^F and 0.01 nF
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16Mx64
5V641604
64-bit
2048-bit
5V641604F
04-f/-ü
HYM5V641604
HYM5V641604FG
HYM5V641604TFG
Rv03
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3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS
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HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
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64mb edo dram simm
Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
Text: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt
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VQ264260BJ
4265BJ
264265BJ
17400CJ
17405CJ
174TGA
26418165BJGA
26418165BTGA
VE46417805BJGA
64mb edo dram simm
Dram 168 pin EDO 8Mx8
4Mx4 dram simm
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LG 2MX32 EDO simm module
Abstract: GMM732201 GMM732411OCNS
Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32
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\GMM781000CNS-6
GMM791000CNS-6
GMM784000CS-6
GMM794000CS-6
1GMM781OOOCNS-7
1GMM791000CNS-7
1GMM784000CS-7
1GMM794000CS-7
1Mx40
2Mx32
LG 2MX32 EDO simm module
GMM732201
GMM732411OCNS
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GMM732411
Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6
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OMM781000CNS-6
GMM791000CNS-6
GMM784000CS-6
GMM794000CS-6
GMM781OOOCNS-7
GMM79I
GMM784000CS-7
GMM794000CS-7
1MX32
GMM7321OOOCS/SG-6
GMM732411
GMM7362000
GMM732411OCNS
OMM781000CNS
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m7401
Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6
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1GMM781000CNS-6
GMM791GOOCNS-6
GMM784000CS-6
GMM794000CS-6
GMM781000CNS-7
GMM791000CNS-7
GMM784000CS-7
GMM794000CS-7
GMM7321OOOCS/SG-6
GMM732101OCS/SG-6
m7401
1MX1
GMM732211OCMS
M7641
GMM7324100cns
83CT
128MB 72-pin SIMM
dram 72-pin simm 128mb
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SO DIMM DRAM 144 Pin Connector Pinout
Abstract: SO DIMM 100 Pin Connector Pinout "simm 72 pin" SO DIMM 72-pin 168-pin sdram dimm x64 edo dram 72-pin SO DIMM
Text: INFORMATION NOTE Presence Detect Assignments on SIEMENS Memory Modules 3.97 Weidlich, Technical Marketing Memories INFOMOD3.FRM MEMORY MODULES Overview: This information note describes the organisation and presence detect assignments used on the SIEMENS memory module families. The SIEMENS memory module families come with present
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168pin
SO DIMM DRAM 144 Pin Connector Pinout
SO DIMM 100 Pin Connector Pinout
"simm 72 pin"
SO DIMM 72-pin
168-pin sdram dimm x64
edo dram 72-pin SO DIMM
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KM48V8004AK
Abstract: No abstract text available
Text: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F88 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The
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KMM366F883AK
KMM366F803AK
8Mx64
KMM366F88
400mil
168-pin
KMM366F883AK
KMM366F803AK
KM48V8004AK
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Untitled
Abstract: No abstract text available
Text: UG516W664 8 8HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG516W664(8)8HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516W664(8)8HK(S)G is assembled using 16 pcs of 8Mx8 4K/8K refresh DRAMs in a 32 pin 400
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UG516W664
168Pin
350Max
89Max)
150Max
81Max)
100Min
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Untitled
Abstract: No abstract text available
Text: UG58E644 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58E644(8)8HK(S)G is a 8,388,608 bits by 64 EDO DRAM module . The UG58E644(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in 400mil SOJ
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UG58E644
168Pin
400mil
ABT16244
240mil
168-pin
1000mil
190Max
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Untitled
Abstract: No abstract text available
Text: UG58W744 8 8HK(S)G 64M Bytes (8M x 72) DRAM 168Pin DIMM With ECC based on 8M x 8 General Description Features The UG58W744(8)8HK(S)G is a 8,388,608 bits by 72 EDO DRAM module With ECC. The UG58W744(8)8HK(S)G is assembled using 9 pcs of 8Mx8 4K/8K refresh DRAMs in a
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UG58W744
168Pin
168-pin
1250mil)
500Max
100Min
540Min)
010Max
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