tlc3741
Abstract: resistor network 104g 9 pin
Text: TLC374, TLC374Q, TLC374Y LinCMOS QUADRUPLE DIFFERENTIAL COMPARATORS SLCS118A-NOVEMBER 1983-R EVISED OCTOBER 1996 • Single- or Dual-Supply Operation D, J, N, OR PW PACKAGE TOP VIEW • Wide Range of Supply Voltages 2 V to 18 V u 10UT[ • Very Low Supply Current Drain 0.3 mA Typ
|
OCR Scan
|
PDF
|
TLC374,
TLC374Q,
TLC374Y
SLCS118A-NOVEMBER
1983-R
LM339
tlc3741
resistor network 104g 9 pin
|
YTF822
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSn YTF822 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. 03.6±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance
|
OCR Scan
|
PDF
|
YTF822
20kXi)
YTF822
|
74ALS05
Abstract: diode sy 106 diode sy 180 10
Text: TOSHIBA TENTATIVE TC74VHC05F/FN/FT TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC05F, TC74VHC05FN, TC74VHC05FT HEX INVERTER OPEN DRAIN _ The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.
|
OCR Scan
|
PDF
|
TC74VHC05F/FN/FT
TC74VHC05F,
TC74VHC05FN,
TC74VHC05FT
TC74VHC05
TC74VHC04,
74ALS05
diode sy 106
diode sy 180 10
|
2SK578
Abstract: 2SK57
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance
|
OCR Scan
|
PDF
|
2SK578
0-22n
0-a25
2SK578
2SK57
|
YTFP450
Abstract: SC651
Text: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :
|
OCR Scan
|
PDF
|
YTFP450
VDS-10V,
00A/ps
YTFP450
SC651
|
TIM1414-4LA-371
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation
|
OCR Scan
|
PDF
|
TIM1414-4LA-371
TIM1414-4LA-371
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2917 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2917 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance
|
OCR Scan
|
PDF
|
2SK2917
|
Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000
|
OCR Scan
|
PDF
|
TIM0910-15L
30dBm
145mA
2-11C1B)
|
MG30G2YM1
Abstract: LD30A
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance
|
OCR Scan
|
PDF
|
MG30G2YM1
15AIN-SOURCE
MG30G2YM1
LD30A
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK1359 Field Effect Transistor U nit in m m Silicon N Channel MOS Type tc-MOS 11.5 15.9MAX High Speed, High Current DC-DC Converter, 032±O2 & Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance cJ " Rds(ON) = 3-OQ (Typ.)
|
OCR Scan
|
PDF
|
2SK1359
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)
|
OCR Scan
|
PDF
|
TPC8103
|
LP319
Abstract: IC 74LS00
Text: I IP 11Q IP7Q 11 LOW POW ER QUAD D IFFER EN TIA L C OM PARATORS 030 44 , OCTOBER 1987-REVISED MAY 1988 • Ultralow Power Supply Current Drain . . . Typically 6 0 /»A • Low Input Biasing Current . . . 3 nA D, J, OR N PACKAGE (TOP VIEW • Low Input Offset Current . . . ± 0 .5 nA
|
OCR Scan
|
PDF
|
1987-REVISED
LM239,
LM339,
LM2901
LP319
IC 74LS00
|
2SK388
Abstract: 2sk38
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK388 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. zasMAX. 0a3±Q2 FEATURES: . Low Drain-Source ON Resistance : RDS(o n )=0 -2 ^ ( TyP•)
|
OCR Scan
|
PDF
|
2SK388
100nA
2SK388
2sk38
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ567 TOSHIBA Field Effect Transistor TEN TA TIVE] Silicon P Channel MOS Type ji-M OSV 2SJ567 Switching Applications Chopper Regulator, D C -D C Converter and Motor Drive Applications Features • Low drain-source ON resistance: R d S (ON) = 1.6 £2 (typ.)
|
OCR Scan
|
PDF
|
2SJ567
|
|
|
Untitled
Abstract: No abstract text available
Text: SN54HC03, SN74HC03 QUADRUPLE 2-INPUT POSITIVE-NAMD GATES WITH OPEN-DRAIN OUTPUTS _ Package Options Include Plastic Small-Outllne D and Ceramic Flat (W) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mll DIPs
|
OCR Scan
|
PDF
|
SN54HC03,
SN74HC03
300-mll
SN54HC03
SN74HC03
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2953 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2953 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance
|
OCR Scan
|
PDF
|
2SK2953
|
2SK2038
Abstract: Transistor TOSHIBA 2SK
Text: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)
|
OCR Scan
|
PDF
|
2SK2038
DRAI11
2SK2038
Transistor TOSHIBA 2SK
|
2SK528
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOS INDUSTRIAL APPLICATIONS Unit in mm 7.0 1 J RATING 2 Vd s x 400 V vgss ±20 V DC Id Pulse idp 4 Drain Power Dissipation (Tc=25°C) Pd Channel Temperature Tch Storage Temperature Range Tstg CHARACTERISTIC
|
OCR Scan
|
PDF
|
2SK528
T0-220
a76-ai5
2SK528
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : RDS(ON) = 100m n (Typ.)
|
OCR Scan
|
PDF
|
TPC8302
|
2SK1357
Abstract: 2Sk1357 transistor
Text: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )
|
OCR Scan
|
PDF
|
2SK1357
300/uA
10jKS
2SK1357
2Sk1357 transistor
|
2SK1928
Abstract: No abstract text available
Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance
|
OCR Scan
|
PDF
|
2SK1928
ij100A/MS
2SK1928
|
Untitled
Abstract: No abstract text available
Text: fl TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M OSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • • • • INDUSTRIAL APPLICATIONS Unit in mm 8 5 fl fi H fl Low Drain-Source ON Resistance : RßS (ON) ~ lömO (Typ.)
|
OCR Scan
|
PDF
|
TPC8001
g--10
|
transistor 2SK1120
Abstract: CL226 2SK1120
Text: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance
|
OCR Scan
|
PDF
|
2SK1120
--300nA
transistor 2SK1120
CL226
2SK1120
|
800v nmos
Abstract: No abstract text available
Text: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)
|
OCR Scan
|
PDF
|
2SK1365
800v nmos
|
