DRAF144E Search Results

DRAF144E

Contextual Info: DRAF144E Tentative Total pages page DRAF144E Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LL Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRAF144E Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF144E DRA3144E in ML3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MN864779

Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Contextual Info: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.

Contextual Info: PT Tj Tstg Total power dissipation Junction temperature Storage temperature R1 / R2 Resistance ratio Conditions °C °C mW mA V V Unit VCE = 5 V, IC = 100 µA VCE = 0.2 V, IC = 5 mA IC = 10 mA, IB = 0.5 mA VCE = 10 V, IC = 5 mA VEB = 6 V, IC = 0 VCE = 50 V, IB = 0