iei9
Abstract: No abstract text available
Text: I 31 I File No.I 3 5 3 eri 04.3 ID I'D 1 lnsulator:ABS, UL94HB RoH S Compliant 4.9 CM 1 / SPECIFICATIONS 8.00 20.2 09.8 I I SHEET l< in 6.9 16.5 2.6 20.5 CN 7.9 30.5 15.8 10.4 in ro Color Gray Black Chrome Plated Beige DQ09C DQ09B P/N: DQ09G DQ09K CATEGORY
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UL94HB
DQ09G
DQ09K
DQ09C
DQ09B
DQ09X-H
iei9
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AS8S512K3
Abstract: No abstract text available
Text: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface
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AS8S2M32PEC
2Mx32
M0-47AE
AS8S2M32
AS8S2M32PEC
AS8S512K3
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Memory
Abstract: FTS8L32512V
Text: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.
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FTS8L32512V
512Kx32
FTS8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
FTI8K32512V
Memory
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Untitled
Abstract: No abstract text available
Text: Mobile 3rd Generation Intel Core Processor Family, Mobile Intel® Pentium® Processor Family, and Mobile Intel® Celeron® Processor Family Datasheet, Volume 1 of 2 June 2013 Document Number: 326768-006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,
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Untitled
Abstract: No abstract text available
Text: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM
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EDI8F32123C
128Kx32
EDI8F32123C
128Kx
128Kx8
EDI8F32123C70MMC
EDI8F32123C85MMC
EDBF32123C
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socket am3 pinout
Abstract: socket AM2 pinout AM3 Processor Functional INTEL 80960 pipeline architecture 80960RM
Text: Intel 80960RM I/O Processor • ■ Complies with PCI Local Bus Specification, Revision 2.2 Universal 5 V and 3.3 V PCI Signalling Environment (C-stepping only) Data Sheet Product Features ■ ■ ■ ■ High Performance Intel® 80960JT Core ■ —Sustained One Instruction/Clock Execution
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80960RM
80960JT
32-Bit
socket am3 pinout
socket AM2 pinout
AM3 Processor Functional
INTEL 80960 pipeline architecture
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540L
Abstract: No abstract text available
Text: 80960RM I/O Processor • Complies with PCI Local Bus Specification, Revision 2.1 ■ 5 K PCI Signalling Environment Data Sheet Advance Information Product Features ■ High Performance 80960JT Core ■ — Sustained One Instruction/Clock Execution — 16 Kbyte, Two-Way Set-Associative
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80960RM
80960JT
32-Bit
1710H
540L
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PDF
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LGA 1155 Socket PIN diagram
Abstract: LGA 1155 PIN diagram LGA 1155 pin out lga1155 pin diagram E3-1275 intel LGA 1155 PIN diagram 1155 PINmap lga1155 land E3-1260L CATERR Catastrophic Error
Text: Intel Xeon® Processor E3-1200 Family Datasheet, Volume 1 This is Volume 1 of 2 June 2011 Document Number: 324970-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS
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E3-1200
aimQ21
LGA 1155 Socket PIN diagram
LGA 1155 PIN diagram
LGA 1155 pin out
lga1155 pin diagram
E3-1275
intel LGA 1155 PIN diagram
1155 PINmap
lga1155 land
E3-1260L
CATERR Catastrophic Error
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MO-47AE
Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Text: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES ADSP-21060L SHARC ADSP-21062L (SHARC) Texas Instruments TMS320LC31 The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and
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EDI8L32512V
512Kx32
ADSP-21062L
TMS320LC31
EDI8L32512V
ADSP-21060L
MPC860
MO-47AE
ADSP-21060L
ADSP-21062L
EDI8L32128V
MPC860
TMS320LC31
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100MHZ
Abstract: 133MHZ WED3DL644V
Text: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by
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WED3DL644V
4Mx64
WED3DL644V
4x1Mx64.
4Mx16
133MHZ,
125MHZ
100MHZ.
100MHZ
133MHZ
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DDR400B
Abstract: HYS64D64020GDL PC2700 PC3200 DDR333 DDR333B DDR400
Text: D a t a S h e e t , R e v . 1 . 1 , M ay . 2 00 4 HYS64D64020[H/G]DL–5–B HYS64D64020[H/G]DL–6–B 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-05 Published by Infineon Technologies AG,
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HYS64D64020
200-Pin
L-DIM-200-006
DDR400B
HYS64D64020GDL
PC2700
PC3200
DDR333
DDR333B
DDR400
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cmo 765
Abstract: GR-78 DDR200 DDR266A PC2100 10292003-DNYO-BD9L infineon ddr numbering
Text: Data Sheet, Rev. 1.2, Jan. 2004 HYS72D16500GR-[7/8]-A HYS72D32501GR-[7/8]-A Low Profile DDR SDRAM-Modules DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice. Edition 2004-06 Published by Infineon Technologies AG,
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HYS72D16500GR-
HYS72D32501GR-
10292003-DNYO-BD9L
cmo 765
GR-78
DDR200
DDR266A
PC2100
10292003-DNYO-BD9L
infineon ddr numbering
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EDI8L32512V-AC
Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
Text: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC
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EDI8L32512V
512Kx32
EDI8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
EDI8L32512V-AC
EDI8L32128V
MO-47AE
MPC860
TMS320LC31
ADSP-21060L
ADSP-21062L
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8l32128c
Abstract: block diagram of of TMS320C4X EDI8L32512C20AI EDI8L32512C TMS320C30 TMS320C32 DSP96002 EDI8L24128C EDI8L32256C
Text: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs
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EDI8L32512C
DSP96002
TMS320C3x,
TMS320C4x
M0-47AE
EDI8L32512C
8l32128c
block diagram of of TMS320C4X
EDI8L32512C20AI
TMS320C30
TMS320C32
DSP96002
EDI8L24128C
EDI8L32256C
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Untitled
Abstract: No abstract text available
Text: EDI8L32512C ^ E D I 512KX32 SRAM Module ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a highspeed, 5V, 16 megabit SRAM. The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory
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EDI8L32512C
512KX32
EDI8L32512C
DSP96002
TMS320C3x,
TMS320C4x
TMS320C30/6C
128Kx32
8L32128C
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.3, Nov. 2005 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p
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HYS72D32300
HYS72D64300
HYS72D64320
HYS72D128320
184-Pin
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DDR266A
Abstract: PC2100 PC2100R
Text: D a t a S h e e t , R e v . 1 . 0 , A p r . 2 00 4 HYS72D16500HR–7–C HYS72D32501HR–7–C 1 8 4 - P i n R eg i s t e r ed D u a l - I n - M e m o r y M o du l e s R D IM M M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-04 Published by Infineon Technologies AG,
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HYS72D16500HR
HYS72D32501HR
DDR266A
PC2100
PC2100R
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i5336
Abstract: No abstract text available
Text: Mobile 3rd Generation Intel Core Processor Family Datasheet – Volume 1 of 2 September 2012 Document Number: 326768-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS
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LHi 968
Abstract: CYNSE70032 CYNSE70128
Text: CYNSE70128 CYNSE70128 Network Search Engine Cypress Semiconductor Corporation Document #: 38-02040 Rev. *E • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised June 23, 2003 CYNSE70128 CONTENTS 1.0 OVERVIEW . 9
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CYNSE70128
83-MHz
LHi 968
CYNSE70032
CYNSE70128
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Untitled
Abstract: No abstract text available
Text: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20
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AS8SLC512K32PEC
512Kx32
M0-47AE
AS8SLC512K32
MO-47AE]
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AE31
Abstract: 273328
Text: 80960RS I/O Processor • ■ Complies with PCI Local Bus Specification, Revision 2.2 Universal 5 V and 3.3 V PCI Signalling Environment (C-stepping only) Data Sheet Advance Information Product Features ■ ■ ■ ■ High Performance 80960JT Core ■ —Sustained One Instruction/Clock Execution
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80960RS
80960JT
32-Bit
HolF00
8710H
AE31
273328
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CATERR
Abstract: 1155 PINmap lga115 SBDQ62 LGA 1155 Socket PINmap Platform Environment Control Interface lga1155 land intel LGA 1155 PIN diagram E3-1200 Design for an LGA1155 processor
Text: Intel Xeon® Processor E3-1200 Family Datasheet, Volume 1 This is Volume 1 of 2 June 2011 Document Number: 324970-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS
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E3-1200
DisclaimerQ21
CATERR
1155 PINmap
lga115
SBDQ62
LGA 1155 Socket PINmap
Platform Environment Control Interface
lga1155 land
intel LGA 1155 PIN diagram
Design for an LGA1155 processor
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PDF
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LGA 1155 Socket PIN diagram
Abstract: lga1155 cpu socket vid pins location LGA 1155 Socket PIN diagram 3rd i7-2600k intel pch i3-2100 lga 1155 lga1155 MXM 3.0 X8 pinout 1155 PINmap
Text: 2nd Generation Intel Core Processor Family Desktop and Intel® Pentium® Processor® Family Desktop Datasheet, Volume 1 Supporting Intel® Core™ i7, i5, and i3 Desktop Processor Series Supporting Intel® Pentium® Processor G800 and G600 Series This is Volume 1 of 2
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540-lead
Abstract: 273328
Text: Intel 80960RS I/O Processor • ■ Complies with PCI Local Bus Specification, Revision 2.2 Universal 5 V and 3.3 V PCI Signalling Environment (C-stepping only) Data Sheet Advance Information Product Features ■ ■ ■ ■ High Performance Intel® 80960JT Core
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80960RS
80960JT
32-Bit
1710H
8710H
540-lead
273328
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PDF
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