DPGAC1S Search Results

DPGAS3S09

Abstract: DPGAS1S09 laser diode 905nm optoelectronics perkinelmer DTS0305 1500-nm DPGAC1S
Contextual Info: P R E L I M I N A R Y SENSOR SOLUTIONS 905nm Epitaxial Double Cavity Multi-Quantum Well InGaAs Pulsed Laser Diode DPGA Series Overview This EPI-cavity structure possesses the same 25˚ beam divergence in the perpendicular direction as the PGA series product line, as well as

Contextual Info: Introduction The Excelitas PGA pulsed laser family consists of hermetically packaged devices having up to four active lasing layers, which are epitaxially grown on a single GaAs substrate chip. This multilayer design multiplies the output power by the number of epi-layers. For

Contextual Info: DATASHEET Photon Detection PGA Series of Single-epi 905 nm Pulsed Semiconductor Lasers High Power Laser-Diode Family for Industrial Range Finding Key Features •      Peak power to 160 Watts Range of single element and stacked devices Overdrive capability up to 4 X

tpgas1s09

Abstract: TPGAS1S03 TPGAS3S09 dpgas1s09 laser weapon TPGAS2S09 DPGAS3S09 AEL Crystals 43 series lidar ACC tunnel diode GaAs
Contextual Info: D A T A S H E 905 nm Multi Active Area Epitaxially Stacked Multi Quantum Well Strained E S E N S O R S O LUTI O N S Multi EPI-Cavity Lasers, DPGA & TPGA Series InGaAs Pulsed Epi-Cavity Laser Diodes T Comparison of the optical Near Field of Laser Diodes with one, two or three Epitaxial Layers.

Contextual Info: D A T A S H E 905 nm Multi Active Area Epitaxially Stacked Multi Quantum Well Strained E S E N S O R S O LUTI O N S Multi EPI-Cavity Lasers, DPGA & TPGA Series InGaAs Pulsed Epi-Cavity Laser Diodes T Comparison of the optical Near Field of Laser Diodes with one, two or three Epitaxial Layers.