DPDD32M Search Results

DPDD32MX8TSBY5

Abstract: 4Mx8 30A242
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit CMOS DDR SDRAM DPDD32MX8TSBY5 The Memory Stack series is a family of interchangeable memory devices. The 256 Mb, CMOS DDR Synchronous DRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb

3233H

Contextual Info: ADVANCED C O M PO N E T E C H N O L O G IE S 5 1 2 M e g a b i t C M O S DDF? S D R A M DPDD32MX1 6W3C Y 5 DESCRIPTION: Z The LP-Stack series is a family of interchangeable memory device. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The devices are constructed

TSOP 54 PIN footprint

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 The Memory Stack series is a family of interchangeable memory modules. The 512 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are

Contextual Info: DENSE-PAC MICROSYSTEMS 128 Megabit C M O S D D R SDRAM DPDD32MX4RLAY5 DPDD32MX4RSÍW5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The128M egabit Double Data Rale Synchronous DRAM isam em ber ofth isfam ilyw h ich utilizesthenew and innovative space savingTSOP

Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD32MX4RSAY5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The is a Dense-Pac core technology used to create 3-Dimensional solid state memory arrays. The DPDD32MX4RSAY5 is a member of the LP-Stack family which applies the Dense-Pac technology to create a 128Mb

udqs

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 512 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices

Contextual Info: M t n t» DENSE-PAC MICROSYSTEMS "7\ /H-Dênsus a ^ 128 Aa dpdd32mx4riay5 Megabit CM OS DDR SDRAM High Density Memory Device d pd d 32 m X 4 R S A Y 5 ADVANCED INFORMATION DESCRIPTION: Jhe/k-'D eH JH j series is a family of interchangeable memory devices.

udqs

Contextual Info: 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 ADVANCED INFORMATION DESCRIPTION: The 512 Megabit LP-Stack modules DPDD32MX16WSCY5, based on 256 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 16 DDR SDRAM TSOP monolithic. This allows for

Dense-Pac Microsystems

Abstract: Megabit SDRAM Drawing
Contextual Info: 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD32MX4RSAY5 DESCRIPTION: The LP-Stack is DPAC core technology used to create 3-Dimensional solid state memory arrays. The DPDD32MX4RSAY5 is a member of the Memory Stack™ family which applies the DPAC technology to create a 128Mb Double Data Rate DDR SDRAM

Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD32MX4RSAY5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The is a Dense-Pac core technology used to create 3-Dimensional solid state memory arrays. The DPDD32MX4RSAY5 is a member of the LP-Stack family which applies the Dense-Pac technology to create a 128Mb

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD32MX4RSAY5 DESCRIPTION: The LP-Stack is DPAC core technology used to create 3-Dimensional solid state memory arrays. The DPDD32MX4RSAY5 is a member of the Memory Stack™ family which applies the DPAC technology to create a 128Mb Double Data Rate DDR SDRAM

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD32MX4RSAY5 DESCRIPTION: FEATURES: • Electrical characteristics meet semiconductor manufacturers’ datasheet • Memory organization: 2 64Mb memory devices. Each device arranged as 16M x 4 bits (4M x 4 bits x 4 banks)

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Mb, CMOS DDR Synchronous DRAM, assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two