DPAK POWER TRANSISTOR OUTLINE Search Results

Contextual Info: BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits

Contextual Info: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits

Contextual Info: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits

BUJ302AD

Contextual Info: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits

Contextual Info: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits

Contextual Info: BUJD103AD NPN power transistor with integrated diode Rev. 3 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic

HD radio nxp application

Abstract: BUJD203AD
Contextual Info: BUJD203AD NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic

BUJD103AD

Contextual Info: BUJD103AD NPN power transistor with integrated diode Rev. 02 — 6 October 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic

BUJD105AD

Contextual Info: BUJD105AD NPN power transistor with integrated diode Rev. 01 — 8 May 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic

Contextual Info: BUJD105AD NPN power transistor with integrated diode Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic

BUJD103AD

Contextual Info: BUJD103AD NPN power transistor with integrated diode Rev. 01 — 8 May 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic

HD radio nxp application

Abstract: transistor integrated diode BUJD103AD
Contextual Info: BUJD103AD NPN power transistor with integrated diode Rev. 3 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic

HD radio nxp application

Abstract: nxp power diode BUJD105AD
Contextual Info: BUJD105AD NPN power transistor with integrated diode Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic

Contextual Info: BUJD203AD NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 DPAK surface-mountable plastic

ST T4 3580

Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc

Contextual Info: A Product Line of Diodes Incorporated Green ZXT690BK 45V NPN HIGH GAIN MEDIUM POWER TRANSISTOR Features Mechanical Data • BVCEO > 45V • Case: TO252 DPAK • IC = 3A high Continuous Collector Current • Case Material: Molded Plastic, "Green" Molding Compound.

Contextual Info: GLOSSARY OF PACKAGING ABBREVIATIONS CLCC Ceramic Leaded Chip Carrier. Solder sealed, mul­ tilayer ceramic. COB Chip on Board. CQFP Glass sealed Ceramic Quad Flat Pack with gull wing leads. Also called CERQUAD or CQUAD. CQUAD Same as CQFP. DPAK Small power transistor package for surface mount.

Contextual Info: IPD068P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features VDS • single P-Channel in DPAK RDS on ,max • Qualified according JEDEC1) for target applications • 175 °C operating temperature -30 V VGS = 10V 6.8 mW VGS = 4.5V 11.0 IDD -70 A • 100% Avalanche tested

068P03L

Abstract: JESD22 JESD22-A114 PG-TO F70 marking
Contextual Info: IPD068P03L3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS • single P-Channel in DPAK R DS on ,max • Qualified according JEDEC 1) for target applications • 175 °C operating temperature -30 V V GS = 10V 6.8 mΩ V GS = 4.5V 11.0 I DD -70

C 829 transistor

Contextual Info: M GTORCLA SC 12E D § k3t72S>l 0085573 5 | X S TR S/ R F T - 3 3 -J 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA T ' 4 ~3l0 MJD148 N P N Silicon Pow er Transistor DPAK For Surface Mount Applications • • • • • • NPN SILICON POWER TRANSISTORS 4 AMPERES

3055E

Abstract: D3055 atech
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is

ZXT790AK

Abstract: ZXT790AKTC ZXT790A
Contextual Info: ZXT790AK 40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = -40V : RSAT = 83m ; IC = -3A DESCRIPTION Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power

Contextual Info: ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various

log sheet air conditioning

Abstract: ZXT849K ZXT849KTC
Contextual Info: ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK SUMMARY BVCEO = 30V : RSAT = 33m typical; IC = 7A DESCRIPTION Packaged in the D-Pak outline this high current high performance 30V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits