DOB11 Search Results

dog 53

Abstract: SED2000FVB sed2000f dog 11
Contextual Info: S E D 2 0 0 0 F vb CMOS VFD DRIVER • DESCRIPTION The SED2000Fvb is a CMOS LSI dot-matrix vacuum fluorescent display anode and grid driver. It has 40 high-voltage anode outputs in 2 x 20 blocks and 20 high-voltage grid outputs. The SED2000Fvb has independent serial inputs and outputs for each 20-element block which feature data

SED2800FVA

Abstract: SED2800F 11 kv vfd S-MOS epson DGG4D33
Contextual Info: S-MOS SYSTEMS A Seiko Epson Affiliate December 1996 SED2800FVA CMOS VFD DRIVER • Description The SED2800FVA is a CMOS LSI dot-matrix vacuum fluorescent display anode and grid driver. It has 40 high-voltage anode outputs and 40 high-voltage grid outputs in 2 x 20

XAPP416

Abstract: RAMB16s RAMB16 XC2V40 DOB10 DOB20
Contextual Info: Application Note: Virtex-II Family R XAPP416 v1.0 August 7, 2002 Using an RPM Grid Macro to Control Block RAM-to-FF Timing Author: Bret Wade Summary This application note describes an alternative method for specifying Relatively Placed Macros (RPMs) using a new grid system called the "RPM Grid". This grid system can be used in the

Contextual Info: DRAM MODULE 4 Mega Byte KMM5401OOOC/CG/CM Fast Page Mode 1Mx40 DRAM SIMM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5401000C is a 1M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5401000C consists of ten CMOS 1Mx4bit DRAMs in 20-pin SOJ packages mounted on

16 BIT SHIFT REGISTER

Abstract: SED2000F DOD15 16-bit shift register DOB10 DOB12 SED2000FOA SED2000FOB 40 bit shift register vfd DOD16
Contextual Info: SED2000FOA/OB PLASMA-DISPLAY/VFD ANODE DRIVER • DESCRIPTION The SED2000FOA/OB is a CMOS LSI dot-matrix plasma-display VFD anode driver. It has 64 high-voltage outputs in 4 x 16 blocks. The SED2000FOA/OB has independent serial inputs and outputs for each 16-element block which feature data

led 7 doan

Abstract: SED2000FVB datasheet led 7 doan SED2000FVA SED2000F S-MOS Systems SED2020 DOG12 A37 diode G38 transistor
Contextual Info: SED2000 CMOS VFD Driver Technical Manual S-MOS Systems, Inc. October, 1996 Version 1.0 Preliminary 330-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238 1 – THIS PAGE INTENTIONALLY BLANK

SED2000FVA

Abstract: SED2000 SED2000F
Contextual Info: SED2000 CMOS VFD Driver Technical Manual S-MOS Systems, inc. October, 1996 Version 1.0 Prelim inary S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 «Tel: (408) 922-0200 • Fax: (408) 922-0238 • 7 T 3 2 T D C1 GOOHOf ci G bGb ■

sed2000f

Abstract: DOC11 SED2000FOA QFP-80pin DOC12
Contextual Info: •¿«I O A /O B PLASMA-DISPLAY/VFD ANODE DRIVER DESCRIPTION The SED2000Foa/ob is a CMOS LSI dot-matrix plasma-display VFD anode driver. It has 64 high-voltage outputs in 4 x 16 blocks. The SED2000Foa/ob has independent serial inputs and outputs for each 16-element block which feature data

SED2800FVA

Abstract: DOH17 SED2800F 405 mo river flows in you S-MOS SYSTEMS INC DOA10
Contextual Info: Data Sheet GRAPHICS SED2800FVA December 1996 SED2800FVA CMOS VFD DRIVER • Description The SED2800FVA is a CMOS LSI dot-matrix vacuum fluorescent display anode and grid driver. It has 40 high-voltage anode outputs and 40 high-voltage grid outputs in 2 x 20

SED2000FVB

Abstract: 20 Bit Shift Register DOG12 DOG2 SED2000F DOG20 DOA17 display pinout 66 block DOG19 20-element
Contextual Info: SED2000FVB CMOS VFD DRIVER • DESCRIPTION The SED2000FVB is a CMOS LSI dot-matrix vacuum fluorescent display anode and grid driver. It has 40 high-voltage anode outputs in 2 x 20 blocks and 20 high-voltage grid outputs. The SED2000FVB has independent serial inputs and outputs for each 20-element block which feature data

DO-D13

Abstract: DOB9 DOA14
Contextual Info: S E D 2 0 0 0 F oa/ob PLASMA-DISPLAY/VFD ANODE DRIVER • DESCRIPTION The SED2000Foa/ob is a CM OS LSI dot-matrix plasma-display VFD anode driver. It has 64 high-voltage outputs in 4 x 16 blocks. The SED 2000F oa/ob has independent serial inputs and outputs for each 16-element block which feature data

Contextual Info: 3Mbit 3Ports FIFO MEMORY P/N: MN4795F The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a license for the industrial property rights. When the mounting this device rotated 90 ° or 270° on the board is executed,

1nt02

Abstract: g110 transistor C618 C134 C144 SA1620 SA1620BE SA1638 400MHZ transceiver DSC1800
Contextual Info: INTEGRATED CIRCUITS SA1620 Low voltage GSM front-end transceiver Product specification 1995 Feb 23 IC17 Handbook Philips Semiconductors PHILIPS This Material Copyrighted By Its Respective Manufacturer PHILIPS Philips Semiconductors Product specification Low voltage GSM front-end transceiver