C 12 PH Zener diode
Abstract: C 15 PH Zener diode C 13 PH Zener diode ph 41 zener diode C 12 PH zener Zener PH 200 ph 18 c zener diode ph Series Zener PH 36 Zener ph 12 c zener diode
Text: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 DO 2 14 ( S MA ) M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 MEL F DO 2 13 DO 3 5 DO 41 w w w. v i s h a y. c o m Selector Guide SMALL SIGNAL ZENER DIODES S MALL S I G NAL DIODE S
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OD523
OD323
DO219AB
OD123
BZX584C-series
AZ23-V-series
BZX84-V-series
VMN-SG2115-0704
C 12 PH Zener diode
C 15 PH Zener diode
C 13 PH Zener diode
ph 41 zener diode
C 12 PH zener
Zener PH 200
ph 18 c zener diode
ph Series Zener
PH 36 Zener
ph 12 c zener diode
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Untitled
Abstract: No abstract text available
Text: Quad IF Receiver AD6657A Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM AVDD AGND DRVDD DRGND AD6657A VIN+A PIPELINE ADC VIN–A 14 NOISE SHAPING REQUANTIZER DO±AB VCMA VIN+B PIPELINE ADC VIN–B 14 NOISE SHAPING REQUANTIZER 11 VCMB VIN+C PIPELINE ADC VIN–C
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AD6657A
11-bit,
MO-275-EEAB-1
144-Ball
BC-144-1)
AD6657ABBCZ
AD6657ABBCZRL
AD6657AEBZ
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AD951x
Abstract: No abstract text available
Text: Quad IF Receiver AD6657A Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM AVDD AGND DRVDD DRGND AD6657A VIN+A PIPELINE ADC VIN–A 14 NOISE SHAPING REQUANTIZER DO±AB VCMA VIN+B PIPELINE ADC VIN–B 14 NOISE SHAPING REQUANTIZER 11 VCMB VIN+C PIPELINE ADC VIN–C
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11-bit,
ANSI-644
10-21-2010-B
MO-275-EEAB-1
144-Ball
BC-144-1)
AD6657ABBCZ
AD6657ABBCZRL
AD6657AEBZ
AD951x
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Untitled
Abstract: No abstract text available
Text: Quad IF Receiver AD6657A Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM AVDD AGND DRVDD DRGND AD6657A VIN+A PIPELINE ADC VIN–A 14 NOISE SHAPING REQUANTIZER DO±AB VCMA VIN+B PIPELINE ADC VIN–B 14 NOISE SHAPING REQUANTIZER 11 VCMB VIN+C PIPELINE ADC VIN–C
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Original
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AD6657A
11-bit,
MO-275-EEAB-1
144-Ball
BC-144-1)
AD6657ABBCZ
AD6657ABBCZRL
AD6657AEBZ
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"Varactor Diode"
Abstract: MV1401 varactor diode datasheet varactor diode tuning varactor varactor APPLICATION
Text: MV1401 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI MV1401 is a Silicon HyperAbrupt Tuning Varactor Diode. PACKAGE STYLE D0-7 FEATURES INCLUDE: • 14:1 Minimum Tuning Range • High Q - 400 Typical • Economical DO-7 Package MAXIMUM RATINGS IF
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MV1401
MV1401
CT1/CT10
"Varactor Diode"
varactor diode datasheet
varactor diode
tuning varactor
varactor APPLICATION
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Untitled
Abstract: No abstract text available
Text: DIO 4499 Why Diodes Auto1 final _- 14/10/2014 13:38 Page 1 WHY DIODES – AUTO1 Why DIODES AUTOMOTIVE Diodes Incorporated Means Automotive Business Quality Focus Applications Focus Products Discrete ‘Q‘ Product Families What do you need from an Automotive supplier?
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Untitled
Abstract: No abstract text available
Text: FR1A . FR1M FR1A . FR1M Fast Switching Surface Mount Silicon Rectifier Diodes Schnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2013-10-14 Nominal current – Nennstrom ± 0.2 ± 0.2 2.2 ± 0.3 0.15 ~ SMA ~ DO-214AC Weight approx. – Gewicht ca.
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DO-214AC
UL94V-0
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CT10
Abstract: DKV6510-12
Text: DKV6510-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6510-12 is an Ion Implanted Silicon Hyperabrupt Varactor Diode Designed for Octave Tuning up to 500 MHz. FEATURES INCLUDE: PACKAGE STYLE DO-7 • Large Tuning Ratio – 14:1 Typ. • High Q – 700 Typ.
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DKV6510-12
DKV6510-12
CT10
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Untitled
Abstract: No abstract text available
Text: ISSUE NO : Rev: DATE OF ISSUE : 2006. 11.03 SPECIFICATION MODEL : SLSNNGA825TS Green LED CUSTOMER : SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314. MAETAN3-DONG, YEONGTONG-KU, SUWON-SI,KYUNGKI-DO,KOREA,442-743 SAMSUNG ELECTRO-MECHANICS SLSNNGA825TS 060810 1/14 Contents
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SLSNNGA825TS
SLSNNGA825TS
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Untitled
Abstract: No abstract text available
Text: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: DO-34DO-35 Lead-Free switch diode Series Product #:Glass Diode Issue Date: Sep 14 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive
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DO-34ã
DO-35
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: DO-34DO-35 Lead switch diode Series Product #:Glass Diode Issue Date: Sep 14 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive
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DO-34ã
DO-35
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: ISSUE NO : Rev: DATE OF ISSUE : 2006. 11. 03 SPECIFICATION MODEL : SLSNNBA825TS BLUE LED CUSTOMER : SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314. MAETAN3-DONG, YEONGTONG-KU, SUWON-SI,KYUNGKI-DO,KOREA,442-743 SAMSUNG ELECTRO-MECHANICS SLSNNBA825TS 060907 1/14 Contents
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SLSNNBA825TS
SLSNNBA825TS
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in4753
Abstract: ZENER 1N4735
Text: E3E D AMERICAN POWER DEVICES 073713S QDDDD1S 1 I T*f -j_3_ Z E N E R DIODES 1W DO-41 Case Typef Zener Voltage V 7 APD15.0 16.0 15.5 APD18.0 18.0 14 20.0 12.5 APD22.0 22.0 11.5 APD24.0 24.0 10.5 APD27.0 27.0 9.5 APD30.0 30.0 8.5 APD33.0 33.0 36.0 APD39.0 39.0
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073713S
DO-41
APD15
APD16
APD18
APD20
APD22
APD24
APD27
in4753
ZENER 1N4735
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equivalent components of zener diode 1n5229b
Abstract: equivalent of zener diode 1N5229B 1N959B 1n5229b 1N5230B 1n5231b zener 1N6006B 1N5248B 1N5529B DO35 1N750A
Text: Zener Diodes Continued POWER 500 mW CASE ZENER VOLTAGE 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 DO-35 INDUSTRY STANDARD INDUSTRY STANDARD 1N4370A 1N4371A 1N4372A 1N746A 1N747A 1N748A
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DO-35
1N4370A
1N4371A
1N4372A
1N746A
1N747A
1N748A
1N749A
1N750A
1N751A
equivalent components of zener diode 1n5229b
equivalent of zener diode 1N5229B
1N959B
1n5229b
1N5230B
1n5231b zener
1N6006B
1N5248B
1N5529B DO35
1N750A
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do7-15
Abstract: ESM 504 100 esm247 BA244 BA379 esm diodes DO73 BA 30 C BA152A ESM 182
Text: Switch diodes Tamb Diodes interrupteurs V RM 'F V F C ase V (m A ) (V ) Type B o ît ie r m ax m ax m ax B A 136 A DO 7 50 100 B A 152 DO 7 15 100 B A 162 A DO 7 15 B A 152 P R C B 14 B A 177 DO 7 A / •r C / / V r (p F ) (m A ) m ax !* (V ) m ax 1 100
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shockley
Abstract: 4E20-8 4E30-8 1N3844 1n3842 4E20-28 4E20-3 4E20-M-28 4E20-M-3 4E20-M-8
Text: F E NUI AL EL EC T RO NI CS /APD Û3 DE I 3541SL.3 DODDÌEE 3 T DO-7/DO-35 Case Switching Voltage Typo ' 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 - — 14-25 — 14-25 — 4E20-M-28 4E30-3 4E30-M-3 4E30-8 4E30-M-8 20 ± 4 30±4 30 ± 4 30 ± 4
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3541SL
DO-7/DO-35
4E20-3
4E20-M-3
4E20-8
4E20-M-8
4E20-28
4E20-M-28
4E30-3
4E30-M-3
shockley
4E30-8
1N3844
1n3842
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE tiTE D • btiSBTBl DDBb?3M DIM H A P X B ZV 10 to 14 J V. VOLTAGE REFERENCE DIODES The BZV10 to 14 are temperature compensated voltage reference diodes in a DO-34 envelope. They are primarily intended fo r use as voltage reference sources in measuring instruments such as digital
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BZV10
DO-34
BZV10
BZV12
BZV13
BZV14
0D5b737
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BZV14
Abstract: BZV12 BZV13 BZV10 BZV11
Text: N AMER PHILIPS/DISCRETE t.*ìE D • tbSBTBl QDEb?34 014 « A P X I B Z V 1 0 to 14 VOLTAGE REFERENCE DIODES The B Z V 10 to 14 are temperature compensated voltage reference diodes in a DO-34 envelope. They are primarily intended fo r use as voltage reference sources in measuring instruments such as digital
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BZV10
DO-34
DO-34
OD-68)
BZV11
BZV12
BZV13
BZV14
BZV14
BZV12
BZV11
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diode BA148
Abstract: BA148 BA148 diode
Text: BA148 HIG H SPEED SILICON DIODE Double diffused general purpose diode in a DO-14 plastic envelope for use as line phase detector, clamping diode, scan rectifier for the supply of the small signal parts in television receivers etc. QUICK REFERENCE DATA C rest working reverse voltage
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BA148
DO-14
DO-14
254min
BA148
diode BA148
BA148 diode
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1N5012A
Abstract: 1N4465 1N4475 1N5025 1n5022 1N4469 1N4474 1N5932B 10 watt zener diode 1N5008A
Text: Zener Diodes POWER 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 30 2.0 WATT 1.5 WATT DO-41 CASE ZENER VOLTAGE Continued HIGH PERFORMANCE INDUSTRY STANDARD 1N4460 1N4461 1N4462 1N4463 1N4464 1N4465 1N4466 1N4467
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DO-41
1N5913B
1N5008A
1N5914B
1N5009A*
1N5915B
1N5010A
1N5916B
1N5011A
1N5917B
1N5012A
1N4465
1N4475
1N5025
1n5022
1N4469
1N4474
1N5932B
10 watt zener diode
1N5008A
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758a
Abstract: JANTX1N758A
Text: Zener Regulator Diodes P art N um ber ! M icrosem i i Package D ivision Outline Type M/crosegw Mil Data Pow er <W j Spec ! Sheet ID r ' Vz V) izt Z zt Zzk |mA) ( fi) ( fi) IR (uA) VR Tol. (V) ;<+/-%) 1N960A Scottsdale DO-35 STD 5352 0.4 9.1 14 7.5 700 25
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DO-35
DO-213AA
O-213AA
758a
JANTX1N758A
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lN4148
Abstract: DIODE LN4148 LN4148 diode lN914 1N914/1N4148 diode case R-1 1n9h diode 1N4148 1N914 low leakage fast epitaxial diode
Text: Data Sheet 1N914 Central 1N4148 SILICON SWITCHING DIODE Sem iconductor Corp. JEDEC DO-35 CASE 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 M anufacturers of W orld C lass Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 1N 9 14, 1N4148 Silicon Planar Epitaxial Diode is characterized by
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1N914
1N4148
DO-35
100WA
lN4148
DIODE LN4148
LN4148 diode
lN914
1N914/1N4148
diode case R-1
1n9h diode
1N4148
low leakage fast epitaxial diode
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 1N746A to 1N759A 2SE D bt.s3i3i aoi73ki? a • T -tt-O l I 400 mW ZENER DIODES Silicon planar diodes in DO-35 packages intended for use as low power voltage stabilizers or voltage references. The series consists of 14 types with nominal working voltages ranging from 3.3 to 12 V.
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OCR Scan
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1N746A
1N759A
aoi73ki?
DO-35
DO-35
1N746A
1N747A
1N748A
1N749A
1N750A
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shockley
Abstract: 4E30-8 1N3839 1N3299 1N3836 1N3842 4E20-28 4E20-3 4E20-8 4E20-M-28
Text: F E NUI AL EL EC T RO NI CS /APD Û3 DE I 3541SL.3 DODDÌEE 3 T DO-7/DO-35 Case Switching Voltage Typo ' 4E20-3 4E20-M-3 4E20-8 4E 20-M -8 4E20-28 20±4 20±4 20±4 20±4 20 ± 4 14-25 — 4E20-M-28 4E30-3 4E30-M-3 4E30-8 4E30-M-8 20 ± 4 30±4 30 ± 4 30 ± 4
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OCR Scan
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3541SL
DO-7/DO-35
4E20-3
4E20-M-3
4E20-8
4E20-M-8
4E20-28
4E20-M-28
4E30-3
4E30-M-3
shockley
4E30-8
1N3839
1N3299
1N3836
1N3842
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