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    DMN65D Price and Stock

    Diodes Incorporated DMN65D8L-7

    Power MOSFET, N Channel, 60 V, 310 mA, 3 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: DMN65D8L-7)
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    Mouser Electronics DMN65D8L-7 106,742
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    Arrow Electronics DMN65D8L-7 12,000 8 Weeks 3,000
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    Quest Components DMN65D8L-7 3,644
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    New Advantage Corporation DMN65D8L-7 204,000 1
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    Diodes Incorporated DMN65D8LDW-7

    Transistor MOSFET Array Dual N-CH 60V 200mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: DMN65D8LDW-7)
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    Avnet Americas DMN65D8LDW-7 Reel 18,000 8 Weeks 3,000
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    Mouser Electronics DMN65D8LDW-7 36,201
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    Arrow Electronics DMN65D8LDW-7 39,000 12 Weeks 3,000
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    DMN65D8LDW-7 12,000 8 Weeks 3,000
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    DMN65D8LDW-7 Cut Strips 7,454 8 Weeks 2,342
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    Newark DMN65D8LDW-7 Cut Tape 3,595 1
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    DMN65D8LDW-7 133 27
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    Quest Components DMN65D8LDW-7 2,439
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    Avnet Asia DMN65D8LDW-7 8 Weeks 9,000
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    Diodes Incorporated DMN65D8LQ-13

    MOSFET BVDSS: 41V~60V SOT23 T&R 10K - Tape and Reel (Alt: DMN65D8LQ-13)
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    Avnet Americas DMN65D8LQ-13 Reel 8 Weeks 10,000
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    Mouser Electronics DMN65D8LQ-13 53,657
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    Diodes Incorporated DMN65D8LFB-7

    MOSFET BVDSS: 61V~100V X1-DFN1006-3 T&R 3K - Tape and Reel (Alt: DMN65D8LFB-7)
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    Avnet Americas DMN65D8LFB-7 Reel 8 Weeks 3,000
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    Mouser Electronics DMN65D8LFB-7 41,014
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    Avnet Silica DMN65D8LFB-7 30,000 10 Weeks 3,000
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    Diodes Incorporated DMN65D8LT-7

    MOSFET N-Channel Enhancement 60V 310mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: DMN65D8LT-7)
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    Avnet Americas DMN65D8LT-7 Reel 12 Weeks 3,000
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    DMN65D Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DMN65D7LFR4-7 Diodes MOSFET BVDSS: 41V~60V X2-DFN1010 Original PDF
    DMN65D8L Diodes Incorporated N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMN65D8L-7 Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 310MA SOT23 Original PDF
    DMN65D8LDW Diodes Incorporated DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMN65D8LDW-7 Diodes Incorporated FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 180MA SOT363 Original PDF
    DMN65D8LDWQ-13 Diodes MOSFET 2N-CH 60V 180MA SOT363 Original PDF
    DMN65D8LDWQ-7 Diodes MOSFET 2N-CH 60V 180MA SOT363 Original PDF
    DMN65D8LFB Diodes Incorporated N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Original PDF
    DMN65D8LFB-7 Diodes Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 260MA 3DFN Original PDF
    DMN65D8LFB-7B Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 260MA 3DFN Original PDF
    DMN65D8LQ-13 Diodes Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V SOT23 Original PDF
    DMN65D8LQ-7 Diodes Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V SOT23 Original PDF
    DMN65D8LT-13 Diodes MOSFET BVDSS: 41V~60V SOT523 T&R Original PDF
    DMN65D8LT-7 Diodes MOSFET BVDSS: 41V~60V SOT523 T&R Original PDF
    DMN65D8LW Diodes Incorporated N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMN65D8LW-7 Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N CH 60V 300MA SOT323 Original PDF
    DMN65D9L-13 Diodes MOSFET BVDSS: 41V-60V SOT23 Original PDF
    DMN65D9L-7 Diodes MOSFET N-CH 60V 335MA SOT23 Original PDF

    DMN65D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DMN65D8LDW

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 8Ω @ VGS = 5V 170mA 6Ω @ VGS = 10V 200mA V(BR)DSS • • • • • • • • • • 60V • • This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching


    Original
    DMN65D8LDW 200mA 170mA AEC-Q101 DS35500 DMN65D8LDW PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


    Original
    DMN65D8LDW 170mA OT363 200mA DS35500 PDF

    n channel mosfet vds max 60v, id max 260ma

    Abstract: No abstract text available
    Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) • • • • • • • • • ID TA = +25°C Package 300mA 3Ω @ VGS = 10V SOT323 60V 260mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original
    DMN65D8LW OT323 260mA 300mA AEC-Q101 DS35639 n channel mosfet vds max 60v, id max 260ma PDF

    DMN65D8L-7

    Abstract: No abstract text available
    Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original
    DMN65D8L 310mA 270mA AEC-Q101 DS35923 DMN65D8L-7 PDF

    DMN65D8L-7

    Abstract: dmn65d8l
    Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original
    DMN65D8L 310mA 270mA AEC-Q101 DS35923 DMN65D8L-7 dmn65d8l PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


    Original
    DMN65D8LDW OT363 170mA 200mA AEC-Q101 DS35500 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • N EW PRODU CT 60V Description and Applications


    Original
    DMN65D8LFB 400mA 330mA DS35449 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V BR DSS Features and Benefits ID TA = 25°C RDS(ON) 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA NEW PRODUCT 60V • N-Channel MOSFET • Low On-Resistance • Low Gate-Threshold Voltage


    Original
    DMN65D8LFB 330mA 400mA AEC-Q101 DS35545 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the


    Original
    DMN65D8LW 260mA 300mA AEC-Q101 DS35639 PDF

    DMN65D

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • NEW PRODUCT 60V Description and Applications These N-Channel enhancement mode field effect transistors are


    Original
    DMN65D8LFB 330mA 400mA AEC-Q101 DS35449 DMN65D PDF

    DMN65D

    Abstract: DMN65D8LDW DMN65D8LDW-7
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


    Original
    DMN65D8LDW OT363 170mA 200mA AEC-Q101 DS35500 DMN65D DMN65D8LDW DMN65D8LDW-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


    Original
    DMN65D8LDW OT363 170mA 200mA DS35500 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V •          ID TA = +25°C 170mA SOT363 200mA Description This new generation MOSFET has been designed to minimize the


    Original
    DMN65D8LDW 170mA OT363 200mA DS35500 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the


    Original
    DMN65D8LW 260mA AEC-Q101 DS35639 PDF

    DMN65D8LDW

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 8Ω @ VGS = 5V 170mA 6Ω @ VGS = 10V 200mA V(BR)DSS • • • • • • • • • • 60V • • This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching


    Original
    DMN65D8LDW 200mA 170mA AEC-Q101 DS35500 DMN65D8LDW PDF

    DMN65D

    Abstract: n channel mosfet vds max 60v, id max 260ma
    Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 3Ω @ VGS = 10V 300mA 4Ω @ VGS = 5V 260mA • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the


    Original
    DMN65D8LW 260mA 300mA AEC-Q101 DS35639 DMN65D n channel mosfet vds max 60v, id max 260ma PDF

    2N7002TAX-7

    Abstract: 2N7002TA 2N7002KX-7
    Text: DATE: 24th November, 2014 PCN #: 2165 REV 01 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.


    Original
    MBR1045 MBR2035CT MBR6040PT SBL1635PT SBL6060PT MBR1050 MBR2535CT MBR6045PT SBL2045CT 2N7002TA 2N7002TAX-7 2N7002TA 2N7002KX-7 PDF

    SBR20Q100CTP

    Abstract: DMN55D DMC2400UV DMS2120LFWB DMN601DWK SBR20A100CT SBR30A50CT SBR10100CTB
    Text: DATE: 8 August, 2012 PCN #: 2084 PCN Title: Qualification of Additional Wafer Fabrication Sources Dear Customer: This is an announcement of change s to products that are currently being


    Original
    DMC3018LSD-13 DMG4932LSD-13 DMN3031LSS-13 DMN3033LSD-13 DMP3056LDM-7 DMP3056LSS-13 DMC3021LK4-13 DMN3030LSS-13 DMN3033LDM-7 DMN3033LSN-7 SBR20Q100CTP DMN55D DMC2400UV DMS2120LFWB DMN601DWK SBR20A100CT SBR30A50CT SBR10100CTB PDF

    DMN62D4SDW-7

    Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
    Text: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,


    Original
    Rev01 OT-23, OT223, OT-323, OT-363, SSOT-23, OD-323 PCN-2061 PCN-2070. OD-323 DMN62D4SDW-7 ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N PDF

    DMN63D8L

    Abstract: No abstract text available
    Text: DATE: 1st June, 2015 PCN #: 2156 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (CAT) as an Additional Assembly & Test Site for Discrete Products and Conversion to Copper Bond Wire on Select Discrete Products at


    Original
    1N4448Wâ BZT52C2V4â BZT52C51â BZT52C13â BZT52B4V7â D1213Aâ DIC-034 DMN63D8L PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original
    2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 PDF