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    DMN26D0UFB4 Price and Stock

    Diodes Incorporated DMN26D0UFB4-7

    MOSFET N-CH 20V 230MA 3DFN
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    DigiKey DMN26D0UFB4-7 Reel 3,000
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    Quest Components DMN26D0UFB4-7 66,966
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    DMN26D0UFB4-7 1,204
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    TME DMN26D0UFB4-7 5
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    Avnet Silica DMN26D0UFB4-7 3,000
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    Component Electronics, Inc DMN26D0UFB4-7 222
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    Vyrian DMN26D0UFB4-7 34,339
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    Win Source Electronics DMN26D0UFB4-7 37,845
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    Diodes Incorporated DMN26D0UFB4-7B

    DIODE
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    Avnet Asia DMN26D0UFB4-7B 10,000
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    Avnet Silica DMN26D0UFB4-7B 10,000
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    Vyrian DMN26D0UFB4-7B 8,418
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    Win Source Electronics DMN26D0UFB4-7B 144,265
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    Diodes Incorporated DMN26D0UFB4-7-55

    DIIDMN26D0UFB4-7-55 MOSFET BVDSS: 8V~24V (Alt: DMN26D0UFB4-7-55)
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    Avnet Asia DMN26D0UFB4-7-55 8 Weeks 3,000
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    DMN26D0UFB4 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DMN26D0UFB4 Diodes Incorporated N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMN26D0UFB4-7 Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 230MA DFN Original PDF
    DMN26D0UFB4-7B Diodes DIODE Original PDF

    DMN26D0UFB4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DMN26D0UFB4

    Abstract: DMN26D0UFB4-7B "MARKING CODE M1"
    Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max


    Original     		DMN26D0UFB4 240mA 170mA AEC-Q101 DS31775 DMN26D0UFB4 DMN26D0UFB4-7B "MARKING CODE M1" PDF

    DMN26D0UFB4

    Abstract: "MARKING CODE M1" DFN1006H4-3
    Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.2V max


    Original     		DMN26D0UFB4 AEC-Q101 DFN1006H4-3 J-STD-020 DS31775 DMN26D0UFB4 "MARKING CODE M1" DFN1006H4-3 PDF

    DMN26D0UFB4-7B

    Abstract: No abstract text available
    Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN26D0UFB4 240mA 170mA AEC-Q101 DS31775 DMN26D0UFB4-7B PDF

    "MARKING CODE M1"

    Abstract: DFN1006H4-3 DMN26D0UFB4
    Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V


    Original     		DMN26D0UFB4 AEC-Q101 DFN1006H4-3 DS31775 "MARKING CODE M1" DFN1006H4-3 DMN26D0UFB4 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN26D0UFB4 240mA 170mA DS31775 PDF

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    DMN26D0UFB4-7B

    Abstract: SDPB1K10NB-7 DDTC115TUA LMN200B01 DMN5L06TK DMP2012SN DMN5L06DMK MMDT3946LP4 DDTB123EU DDTD114GC
    Text: DATE: 7th April, 2011 PCN #: 2020 PCN Title: Qualification of Additional Wafer Fabrication Sources Dear Customer: This is an announcement of change s to products that are currently being


    Original     		DMN2005K-7 DMN3115UDM-7 DMN5L06TK-7 DMP2104LP-7-G BSS8402DW-7-G DMN2005LP4K-7 DMN3200U-7 DMN5L06VAK-7 DMP2104V-7 BSS84DW-7-F DMN26D0UFB4-7B SDPB1K10NB-7 DDTC115TUA LMN200B01 DMN5L06TK DMP2012SN DMN5L06DMK MMDT3946LP4 DDTB123EU DDTD114GC PDF

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


    Original     		D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4 PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 PDF