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    Dawin Electronics Co Ltd DM1GL75SH12A

    High Power SPT+ and Rugged Type IGBT Module Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
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    ComSIT USA DM1GL75SH12A 16
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    DM1GL75SH12A

    Abstract: IGBT for switched reluctance motor 4 switched reluctance motor
    Text: Preliminary DM1GL75SH12A Jan. 2010 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems.


    Original     		PDF DM1GL75SH12A DM1GL75SH12A IGBT for switched reluctance motor 4 switched reluctance motor