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    DIODE ZL 22 Search Results

    DIODE ZL 22 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ZL 22 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95489 IRF2907ZPbF IRF2907ZS IRF2907ZL AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax TO-220 is available in PbF as a Lead-Free


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    IRF2907ZPbF IRF2907ZS IRF2907ZL O-220 EIA-418. O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95446 IRL1404ZPbF IRL1404ZS IRL1404ZL AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax TO-220 is available in PbF as Lead-Free


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    IRL1404ZPbF IRL1404ZS IRL1404ZL O-220 EIA-418. O-220AB PDF

    VPS05605

    Abstract: BF 212 transistor TS1440
    Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


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    VPS05605 OT-343 -j100 Dec-13-1999 VPS05605 BF 212 transistor TS1440 PDF

    420 NPN Silicon RF Transistor

    Abstract: VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86
    Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3  For high gain low noise amplifiers 4  For oscillators up to 10 GHz  Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


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    VPS05605 OT-343 45GHz -j100 Dec-13-1999 420 NPN Silicon RF Transistor VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86 PDF

    siemens rs 1003

    Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
    Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability


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    VPS05605 Q62702-F1592 OT-343 -j100 Sep-09-1998 siemens rs 1003 TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440 PDF

    a06 transistor

    Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line


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    BFP405 1512dB 25-Line OT343 Q62702-F-1592 a06 transistor TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405 PDF

    diode zl 82

    Abstract: diode SMD MARKING CODE SAW diode zl 8.2 BCR22 smd marking VB SCT-598 smd marking gc smd marking GI 20 5 pin ZL smd diode
    Text: GaAs MMIC CMY 800 Target Data Sheet • Bipolar RF amplifier and GaAs mixer with integrated IF-amplifier for mobile communication i.e. AMPS • typical overall performance (operation conditions 2.7 V, 8 mA; fRF = 881 MHz; fLO = 997 Mhz): Gain 22 dB (incl. 3 dB loss of SAW), Input P– 1 dB


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    SCT-598 SCT-598 GPW09182 diode zl 82 diode SMD MARKING CODE SAW diode zl 8.2 BCR22 smd marking VB smd marking gc smd marking GI 20 5 pin ZL smd diode PDF

    MAGNETICA TRANSFORMER

    Abstract: NTC-10 ohm VARISTOR NTC 10 NTC-10 diode SMD t01 transistor TL431 to92 TL431 SMD optocoupler PC817b Diode smd code f2 D417-4
    Text: PROJECT NAME: STEVAL-ISA033V1 BILL OF MATERIALS Item Quantity Reference AC/DC CONVERTER 1 2 1 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 1 1 1 2 1 1 1 3 1 1 1 1 1 1 1 2 18 4 19 20 21 22 23 24 25 26 27 28 29 30 31 32 1 1 2 1 1 1 1 1 1 2 1 1 1 33 34 1 J22 J8 RT1


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    STEVAL-ISA033V1 300Vac 220uF-450V 100pF 330uF-35V 68Electronics TL431 HCF4011B TS912 VN750PT MAGNETICA TRANSFORMER NTC-10 ohm VARISTOR NTC 10 NTC-10 diode SMD t01 transistor TL431 to92 TL431 SMD optocoupler PC817b Diode smd code f2 D417-4 PDF

    BF 914 transistor

    Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
    Text: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


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    Q62702-F1592 OT-343 BF 914 transistor transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914 PDF

    transistor R 405

    Abstract: No abstract text available
    Text: SIEMENS SI EGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


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    Q62702-F1592 OT-343 a235b05 transistor R 405 PDF

    428l2

    Abstract: SIEMENS TD-400 Q67060-S7403-A2 BTS428L2 GPT09161 Diodes smd e4 BTS428-L2
    Text: PROFET BTS428L2 Smart High-Side Power Switch One Channel: 60mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation Package RON Vbb on IL(NOM) IL(SCr) 60mΩ 4.75.41V 7.0A 17A TO 252-5-1 (D-Pak less than half the size of a TO-220 SMD)


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    BTS428L2 O-220 1999-Feb-26 428l2 SIEMENS TD-400 Q67060-S7403-A2 BTS428L2 GPT09161 Diodes smd e4 BTS428-L2 PDF

    436L2

    Abstract: BTS436L2 Q67060-S6111-A2 Q67060-S6111-A3 Q67060-S6111-A4
    Text: BTS436L2 Smart High-Side Power Switch One Channel: 38mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation Package RON Vbb on IL(NOM) IL(SCr) 38mΩ 4.75.41V 9.8A 40A TO 220-5-11 TO-263-5-2 Standard


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    BTS436L2 O-263-5-2 O-220-5-12 2003-Oct-01 436L2 BTS436L2 Q67060-S6111-A2 Q67060-S6111-A3 Q67060-S6111-A4 PDF

    428l2

    Abstract: SIEMENS TD-400 BTS436L2 BTS436L2G siemens functional description profet BTS436L2 S siemens functional profet
    Text: PROFET BTS436L2 Smart High-Side Power Switch One Channel: 38mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation Package RON Vbb on IL(NOM) IL(SCr) 38mΩ 4.75.41V 9.8A 40A TO 220-5-11 TO-263-5-2


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    BTS436L2 O-263-5-2 O-220-5-12 1999-Feb-26 428l2 SIEMENS TD-400 BTS436L2 BTS436L2G siemens functional description profet BTS436L2 S siemens functional profet PDF

    velocity of propagation of FR4

    Abstract: transmission line theory AN22 AP-524 SIGNAL PATH DESIGNER
    Text: Application Note 22


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    PI6C673 velocity of propagation of FR4 transmission line theory AN22 AP-524 SIGNAL PATH DESIGNER PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96380 AUTOMOTIVE GRADE AUIRF2903ZS AUIRF2903ZL HEXFET Power MOSFET Features l l l l l l l V BR DSS D Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant


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    AUIRF2903ZS AUIRF2903ZL PDF

    RUBYCON YK CAPACITOR

    Abstract: YAGEO resistor sharp optocoupler UEI 10SP050L GLF2012T capacitor electrolytic BC 2432.0015C Rubycon yk SMD diode za GLF2012T100M
    Text: STEVAL-ISA012V1 BOM Reference Value Description CON1, CON2 Hartmann/ptr, 2 poles, type PK 7402, 380VAC 16A COW3 Hartmann/ptr, 3 poles, type PK 3503, 380VAC 16A C1 2.2nF/2kV Cera-Mite Corporation 44LD22 Y1 Ceramic Capacitor 20% C 27C3 220ilF 630V TDK C5750X7R2J224M SMD Ceramic Capacitor 20%


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    STEVAL-ISA012V1 380VAC 44LD22 220ilF C5750X7R2J224M 2uF450V 330jF 22uF16V 270mR RUBYCON YK CAPACITOR YAGEO resistor sharp optocoupler UEI 10SP050L GLF2012T capacitor electrolytic BC 2432.0015C Rubycon yk SMD diode za GLF2012T100M PDF

    Untitled

    Abstract: No abstract text available
    Text: HD74LVCZ240A Octal Buffers / Line Drivers with 3–state Outputs ADE-205-229A Z 2nd. Edition February 1999 Description The HD74LVCZ240A has eight inverter drivers with three state outputs in a 20 pin package. This device is a inverting buffer and has two active low enables (1G and 2G). Each enable independently controls four


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    HD74LVCZ240A ADE-205-229A HD74LVCZ240A PDF

    HD74LVCZ240A

    Abstract: DSA003634
    Text: HD74LVCZ240A Octal Buffers / Line Drivers with 3–state Outputs ADE-205-229A Z 2nd. Edition February 1999 Description The HD74LVCZ240A has eight inverter drivers with three state outputs in a 20 pin package. This device is a inverting buffer and has two active low enables (1G and 2G). Each enable independently controls four


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    HD74LVCZ240A ADE-205-229A HD74LVCZ240A DSA003634 PDF

    Hitachi DSA002744

    Abstract: No abstract text available
    Text: HD74LVCZ245A Octal Bidirectional Transceivers with 3–state Outputs ADE-205-228A Z 2nd. Edition February 1999 Description The HD74LVCZ245A has eight buffers with three state outputs in a 20 pin package. When (T / R) is high, data flows from the A inputs to the B outputs, and when (T / R) is low, data flows from the B inputs to the


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    HD74LVCZ245A ADE-205-228A HD74LVCZ245A Hitachi DSA002744 PDF

    HD74LVCZ240A

    Abstract: Hitachi DSA00229
    Text: HD74LVCZ240A Octal Buffers / Line Drivers with 3–state Outputs ADE-205-229A Z 2nd. Edition February 1999 Description The HD74LVCZ240A has eight inverter drivers with three state outputs in a 20 pin package. This device is a inverting buffer and has two active low enables (1G and 2G). Each enable independently controls four


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    HD74LVCZ240A ADE-205-229A HD74LVCZ240A Hitachi DSA00229 PDF

    HD74LVCZ245A

    Abstract: Hitachi DSA00229
    Text: HD74LVCZ245A Octal Bidirectional Transceivers with 3–state Outputs ADE-205-228A Z 2nd. Edition February 1999 Description The HD74LVCZ245A has eight buffers with three state outputs in a 20 pin package. When (T / R) is high, data flows from the A inputs to the B outputs, and when (T / R) is low, data flows from the B inputs to the


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    HD74LVCZ245A ADE-205-228A HD74LVCZ245A Hitachi DSA00229 PDF

    724G

    Abstract: K 724G Q67060-S7026 L18H
    Text: BTS 724G Smart High-Side Power Switch Four Channels: 4 x 90mΩ Ω Status Feedback Product Summary Vbb Active channels On-state Resistance RON Nominal load current IL NOM Current limitation IL(SCr) Package Operating Voltage 5.5.40V four parallel 22.5mΩ


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    P-DSO-20 724G K 724G Q67060-S7026 L18H PDF

    Untitled

    Abstract: No abstract text available
    Text: BTS 724G Smart High-Side Power Switch Four Channels: 4 x 90mΩ Ω Status Feedback Product Summary Vbb Active channels On-state Resistance RON Nominal load current IL NOM Current limitation IL(SCr) Package Operating Voltage 5.5.40V four parallel 22.5mΩ


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    P-DSO-20 PDF

    SSOT-25

    Abstract: XC74UL4066 XC74UL4066M
    Text: CMOS Logic ◆CMOS Logic Analog Switch •Applications ◆Operating Voltage Range : 2V ~ 5.5V ●Palmtops ◆High Speed Operations ●Digital Equipment : tpd =2ns TYP ◆Low Power Consumption : 1µA max ◆Low ON Resistance : Ron=22Ω TYP ■Description


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    XC74UL4066M SSOT-25 OT-25 XC74UL4066 XC74UL4066 PDF