DIODE V6 81 Search Results
DIODE V6 81 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LM385Z-2.5/LFT1 |
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Micropower Voltage Reference Diode 3-TO-92 |
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LM385Z-2.5/LFT2 |
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Micropower Voltage Reference Diode 3-TO-92 |
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LM336Z-2.5/LFT1 |
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Voltage Reference Diode 3-TO-92 |
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LM385Z-1.2/LFT4 |
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Micropower Voltage Reference Diode 3-TO-92 |
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LM285BXZ-1.2/LFT4 |
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Micropower Voltage Reference Diode 3-TO-92 |
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DIODE V6 81 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MA4E1340
Abstract: MA4E1340A-1141T MA4E1340A-1146T MA4E1340A1-287T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143
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MA4E1340 OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E1340A-1141T MA4E1340A-1146T MA4E1340A1-287T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143 | |
MA4E1339
Abstract: MA4E1339A-1141T MA4E1339A-1146T MA4E1339A1-287T MA4E1339A-287T MA4E1339B-1146T MA4E1339B-287T MA4E1339E-1068T diode 1-35 L V6
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MA4E1339 OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E1339A-1141T MA4E1339A-1146T MA4E1339A1-287T MA4E1339A-287T MA4E1339B-1146T MA4E1339B-287T MA4E1339E-1068T diode 1-35 L V6 | |
MA4E2054E-1068T
Abstract: LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T MA4E2054 equivalent of v6 surface mount diode DIODE 1581
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MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E2054E-1068T LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T equivalent of v6 surface mount diode DIODE 1581 | |
Contextual Info: MA46410 thru MA46485 Series GaAs Hyperabrupt Varactor Diode Gamma = 1.0, 1.25, & 1.50 Features Rev. V6 Common Case styles Constant Gamma = 1.0, 1.25 or 1.5 High Q up to 4000 at -4 Volts More Linear Frequency Tuning High and Nearly Constant Modulation Sensitivity |
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MA46410 MA46485 MA46450, MA46470 MA46450 | |
Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs |
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MA4SW410 30dBm MA4SW410 | |
MASW-001100-1190
Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
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MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 50MHz 20GHz 33dBm MASW-001100-1190, MASW-002100-1191 MASW-001100-1190 MASW-001100-11900G MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512 | |
Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs |
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MA4SW110 MA4SW210 MA4SW310 50MHz 20GHz 30dBm MA4SW110 MA4SW110, | |
MA4GP907
Abstract: 10ghz pin diode
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MA4GP907 MA4GP907 10ghz pin diode | |
Contextual Info: MA4ST1200 Series Low Tuning Voltage / Low Rs Silicon Hyperabrupt Varactor Diode M/A-COM Products Rev. V6 Features SC-70 3 lead • Low Series Resistance at Low Tuning Voltages • High Capacitance Ratio at Low Tuning Voltages • Surface Mount Plastic Packages : SC-79, SOD323, SC-70 ( 3L ) |
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MA4ST1200 SC-70 SC-79, OD323, OD-323 SC-79 | |
MASW-000553-13220G
Abstract: macom rf switch MASW-000553 macom pin diode application
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-10mA MASW-000553-13220G macom rf switch MASW-000553 macom pin diode application | |
Contextual Info: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features • Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance |
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MASW-002103-1363 MASW-002103-1363 | |
Contextual Info: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features • Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance |
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MASW-002103-1363 MASW-002103-1363 | |
MA4P274-1141T PIN Diodes
Abstract: diode V6 Ma4P45 MA4P7436-1141T diode 14-V6 MA4P7447-287T
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MA4P278 MA4P7438 MA4P282 MA4P7447 MA4P274 MA4P7455 MA4P274-1141T PIN Diodes diode V6 Ma4P45 MA4P7436-1141T diode 14-V6 MA4P7447-287T | |
SMD package code V12
Abstract: tda 1050 P-DSO-20 diode v6 33 SMD code V12 v1-2 V9 smd diode diode V6 81 DIODE V6 03 SMD R518 DIODE
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6051-5X 12-MHz 6048-5X P-DSO-20 Q67000-A5125 6048-5X. V19-20 SMD package code V12 tda 1050 P-DSO-20 diode v6 33 SMD code V12 v1-2 V9 smd diode diode V6 81 DIODE V6 03 SMD R518 DIODE | |
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Contextual Info: All MikroElektronika´s development systems represent irreplaceable tools for programming and developing microcontroller-based devices. Carefully chosen components and the use of machines of the last generation for mounting and testing thereof are the best guarantee of high reliability of our devices. Due to |
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AFFICHEUR LCD 16
Abstract: multiplexeur
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macom marking
Abstract: MAcom device marking diode marking v6 V6 marking varactor diode
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MAVR-000200 OT-23, OD-323, SC-79) OD-323 SC-79 OD-323 macom marking MAcom device marking diode marking v6 V6 marking varactor diode | |
060inches
Abstract: in402 MA4P4006B-402
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J-STD-02 060inches in402 MA4P4006B-402 | |
MA4GP907Contextual Info: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation |
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MA4GP907 MA4GP907 | |
Contextual Info: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation |
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MA4GP907 MA4GP907 | |
GALVANOMETER
Abstract: uaf1025 taximeter Speedometer and Mileage Indicator SAF1025
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UAF1025 UAF1025 fl2711 G003flbfl GALVANOMETER taximeter Speedometer and Mileage Indicator SAF1025 | |
Contextual Info: All Mikroelektronika´s development systems represent irreplaceable tools for programming and developing microcontroller-based devices. Carefully chosen components and the use of machines of the last generation for mounting and testing thereof are the best guarantee of high reliability of our devices. Due to |
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Contextual Info: MA4P HIPAX High Power PIN Diodes RoHs Compliant Rev. V6 Package Styles Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Handling Low Loss / Low Distortion Voltage Ratings up to 1000 Volts Passivated Chip for Low Leakage Current Low Theta θ Due to Full Face Chip Bonding |
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Contextual Info: MA46410 thru MA46485 Series GaAs Hyperabrupt Varactor Diode Gamma = 1.0, 1.25, & 1.50 Features • Constant Gamma = 1.0, 1.25 or 1.5 High Q up to 4000 at -4 Volts More Linear Frequency Tuning High and Nearly Constant Modulation Sensitivity |
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MA46410 MA46485 MA46450, MA46470 MA46450 |