DIODE V2 Search Results

V23990-P631-A-PM

Abstract: brake DIODE
Contextual Info: V23990-P631-A-PM datasheet Maximum Ratings Tj=25°C, unless otherwise specified Inverter Switch / Brake Switch Copyright Vincotech 1 16 Mar. 2015 / Revision 2 V23990-P631-A-PM datasheet Inverter diode / Brake Diode Rectifier Diode Module Properties Copyright Vincotech

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

T 4512 H diode

Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

DIODE V10-20

Abstract: T1548 general electric EIA 6-8
Contextual Info: 6AF3 6AF3 ET-T1548 Page 1 7-J9 DIODE FOR TV DAMPING-DIODE APPLICATIONS TUBES DESCRIPTION AND RATING The 6AF3 is a miniature, heater-cathode type diode for service as the damp­ ing diode in the horizontal-deflection circuit of television receivers. It will

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

IDG 600

Abstract: M61880FP 20P2N-A M61880
Contextual Info: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.

ADB 935

Abstract: diode smd ed 49 smd diode code ED 5l marking ADB18PS diode jc 5l Diode smd code cm SGS-THOMSON SMD marking code ADB
Contextual Info: ADB18PS  AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage : Caller Id Handset TAB 1 DESCRIPTION The ADB18PS combines a diode bridge and a

Contextual Info: 635nm Laser Diode 635nm Red Laser Diode /&8633541A-preliminary •Specifications 1 Device: (2) Structure: /&8633541A-preliminary Laser Diode TO-18(ψ5.6mm), with Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)

LCU98B041A

Contextual Info: 980nm Laser Diode 980nm Laser Diode LCU98B041A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm), With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output

LCU98A041A

Abstract: 100mw laser diode Laser Diode 10 pin laser diode LT 100mw laser diode 980 nm
Contextual Info: 980nm Laser Diode 980nm Laser Diode LCU98A041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18(ψ5.6mm), With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output

LCU98E046D

Abstract: 980NM
Contextual Info: 980nm Laser Diode 980nm Laser Diode LCU98E046D-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-5(ψ9.0mm), With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output

50mw to-18

Contextual Info: 980nm Laser Diode 980nm Laser Diode LCU985047D •Specifications 1 Device: (2) Structure: Laser Diode TO-18(φ5.6mm),With no glass cap,no PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output Po Reverse

V6CH

Abstract: diode ch9
Contextual Info: TVS Rail Clamp / Avalanche Diode SP0506CAA, SP0506CAB, SP0518CAA Transient Voltage Suppression Rail Clamp Diode Array with Avalanche Diode Features This family of rail clamp or “diode steering” arrays are designed for very low capacitance ESD protection and is

LCU98A046D

Abstract: laser diode 980 nm 2864
Contextual Info: 980nm Laser Diode 980nm Laser Diode LCU98A046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18(ψ5.6mm), With Pb free glass cap, no PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output

LCU985041A

Abstract: Laser Diode 10 pin 10 pin laser diode 2864 laser components
Contextual Info: 980nm Laser Diode 980nm Laser Diode LCU985041A •Specifications 1 Device: (2) Structure: Laser Diode TO-18(φ5.6mm),With Pb free glass cap,with PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output Po

STPSC2006

Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
Contextual Info: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power

V23990-P635-A-PM

Abstract: Vincotech
Contextual Info: V23990-P635-A-PM datasheet Maximum Ratings Tj=25°C, unless otherwise specified Inverter Switch Copyright Vincotech 1 17 Mar. 2015 / Revision 2 V23990-P635-A-PM datasheet Inverter Diode Brake Switch Brake Diode Copyright Vincotech 2 17 Mar. 2015 / Revision 2

V23990-P634-A-PM

Contextual Info: V23990-P634-A-PM datasheet Maximum Ratings Tj=25°C, unless otherwise specified Inverter switch Copyright Vincotech 1 25 Mar. 2015 / Revision 4 V23990-P634-A-PM datasheet Inverter Diode Brake switch Brake Diode Copyright Vincotech 2 25 Mar. 2015 / Revision 4

V23990-P633-A-PM

Contextual Info: V23990-P633-A-PM datasheet Maximum Ratings Tj=25°C, unless otherwise specified Inverter switch Copyright Vincotech 1 25 Mar. 2015 / Revision 3 V23990-P633-A-PM datasheet Inverter Diode Brake switch Brake Diode Copyright Vincotech 2 25 Mar. 2015 / Revision 3