V23990-P631-A-PM
Abstract: brake DIODE
Text: V23990-P631-A-PM datasheet Maximum Ratings Tj=25°C, unless otherwise specified Inverter Switch / Brake Switch Copyright Vincotech 1 16 Mar. 2015 / Revision 2 V23990-P631-A-PM datasheet Inverter diode / Brake Diode Rectifier Diode Module Properties Copyright Vincotech
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V23990-P631-A-PM
V23990-P631-A-PM
brake DIODE
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Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
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Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
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IDG 600
Abstract: M61880FP 20P2N-A M61880
Text: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.
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M61880FP
REJ03F0068-0100Z
M61880FP
IDG 600
20P2N-A
M61880
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ADB 935
Abstract: diode smd ed 49 smd diode code ED 5l marking ADB18PS diode jc 5l Diode smd code cm SGS-THOMSON SMD marking code ADB
Text: ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage : Caller Id Handset TAB 1 DESCRIPTION The ADB18PS combines a diode bridge and a
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ADB18PS
ADB18PS
ADB 935
diode smd ed 49
smd diode code ED
5l marking
diode jc 5l
Diode smd code cm
SGS-THOMSON SMD
marking code ADB
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Abstract: No abstract text available
Text: 635nm Laser Diode 635nm Red Laser Diode /&8633541A-preliminary •Specifications 1 Device: (2) Structure: /&8633541A-preliminary Laser Diode TO-18(ψ5.6mm), with Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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635nm
633541A-preliminary
lcu633541a
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LCU98B041A
Abstract: No abstract text available
Text: 980nm Laser Diode 980nm Laser Diode LCU98B041A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm), With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output
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980nm
LCU98B041A-preliminary
lcu98b041a
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LCU98C046D
Abstract: No abstract text available
Text: 980nm Laser Diode 980nm Laser Diode LCU98C046D-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-5(ψ9.0mm), With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output
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980nm
LCU98C046D-preliminary
lcu98c046d
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LCU98A041A
Abstract: 100mw laser diode Laser Diode 10 pin laser diode LT 100mw laser diode 980 nm
Text: 980nm Laser Diode 980nm Laser Diode LCU98A041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18(ψ5.6mm), With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output
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980nm
LCU98A041A-preliminary
lcu98a041a
100mw laser diode
Laser Diode 10 pin
laser diode LT
100mw laser diode 980 nm
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LCU98E046D
Abstract: 980NM
Text: 980nm Laser Diode 980nm Laser Diode LCU98E046D-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-5(ψ9.0mm), With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output
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980nm
LCU98E046D-preliminary
lcu98e046d
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V6CH
Abstract: diode ch9
Text: TVS Rail Clamp / Avalanche Diode SP0506CAA, SP0506CAB, SP0518CAA Transient Voltage Suppression Rail Clamp Diode Array with Avalanche Diode Features This family of rail clamp or “diode steering” arrays are designed for very low capacitance ESD protection and is
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SP0506CAA,
SP0506CAB,
SP0518CAA
immuni025"
SP0506CAA
SP0506
SP0506CAB
SP0518
SP0518CAA
V6CH
diode ch9
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LCU98A046D
Abstract: laser diode 980 nm 2864
Text: 980nm Laser Diode 980nm Laser Diode LCU98A046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18(ψ5.6mm), With Pb free glass cap, no PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output
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980nm
LCU98A046D-preliminary
lcu98a046d
laser diode 980 nm
2864
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LCU985041A
Abstract: Laser Diode 10 pin 10 pin laser diode 2864 laser components
Text: 980nm Laser Diode 980nm Laser Diode LCU985041A •Specifications 1 Device: (2) Structure: Laser Diode TO-18(φ5.6mm),With Pb free glass cap,with PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output Po
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980nm
LCU985041A
lcu985041a
Laser Diode 10 pin
10 pin laser diode
2864
laser components
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STPSC2006
Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power
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STPSC2006CW
O-247
STPSC2006
STPSC2006CW
silicon carbide diode
STMicroelectronics POWER SWITCHING
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V23990-P635-A-PM
Abstract: Vincotech
Text: V23990-P635-A-PM datasheet Maximum Ratings Tj=25°C, unless otherwise specified Inverter Switch Copyright Vincotech 1 17 Mar. 2015 / Revision 2 V23990-P635-A-PM datasheet Inverter Diode Brake Switch Brake Diode Copyright Vincotech 2 17 Mar. 2015 / Revision 2
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V23990-P635-A-PM
20-PM
V23990-P635-A-PM
Vincotech
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V23990-P634-A-PM
Abstract: No abstract text available
Text: V23990-P634-A-PM datasheet Maximum Ratings Tj=25°C, unless otherwise specified Inverter switch Copyright Vincotech 1 25 Mar. 2015 / Revision 4 V23990-P634-A-PM datasheet Inverter Diode Brake switch Brake Diode Copyright Vincotech 2 25 Mar. 2015 / Revision 4
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V23990-P634-A-PM
20-PM
V23990-P634-A-PM
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V23990-P633-A-PM
Abstract: No abstract text available
Text: V23990-P633-A-PM datasheet Maximum Ratings Tj=25°C, unless otherwise specified Inverter switch Copyright Vincotech 1 25 Mar. 2015 / Revision 3 V23990-P633-A-PM datasheet Inverter Diode Brake switch Brake Diode Copyright Vincotech 2 25 Mar. 2015 / Revision 3
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V23990-P633-A-PM
20-PM
V23990-P633-A-PM
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
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DIODE V10-20
Abstract: T1548 general electric EIA 6-8
Text: 6AF3 6AF3 ET-T1548 Page 1 7-J9 DIODE FOR TV DAMPING-DIODE APPLICATIONS TUBES DESCRIPTION AND RATING The 6AF3 is a miniature, heater-cathode type diode for service as the damp ing diode in the horizontal-deflection circuit of television receivers. It will
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ET-T1548
DIODE V10-20
T1548
general electric
EIA 6-8
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