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    DIODE UF5408 Search Results

    DIODE UF5408 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE UF5408 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UF5404G

    Abstract: 5406G UF5400G UF5408G 5402G
    Text: UF5400G – UF5408G WTE POWER SEMICONDUCTORS Pb 3.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


    Original     		UF5400G UF5408G DO-201AD, MIL-STD-202, DO-201AD UF5404G 5406G UF5400G UF5408G 5402G PDF

    UF5408

    Abstract: UF5408 DIODE UF540x uf5404 diode diode uf5408 uf5404 uf5407 RS-296-E UF5400 UF5400-T3
    Text: UF5400 – UF5408 WTE POWER SEMICONDUCTORS Pb 3.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-201AD, Molded Plastic


    Original     		UF5400 UF5408 DO-201AD, MIL-STD-202, DO-201AD UF5408 UF5408 DIODE UF540x uf5404 diode diode uf5408 uf5404 uf5407 RS-296-E UF5400 UF5400-T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: UF5400G – UF5408G 3.0A GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency


    Original     		UF5400G UF5408G DO-201AD, MIL-STD-202, DO-201AD PDF

    Untitled

    Abstract: No abstract text available
    Text: UF5400G – UF5408G WTE POWER SEMICONDUCTORS Pb 3.0A GLASS PASSIVATED ULTRAFAST DIODE Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


    Original     		UF5400G UF5408G DO-201AD, MIL-STD-202, DO-201AD PDF

    UF540x

    Abstract: No abstract text available
    Text: UF5400 – UF5408 3.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes


    Original     		UF5400 UF5408 DO-201AD, MIL-STD-202, DO-201AD UF540x PDF

    Untitled

    Abstract: No abstract text available
    Text: UF5400 – UF5408 WTE POWER SEMICONDUCTORS Pb 3.0A ULTRAFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-201AD, Molded Plastic


    Original     		UF5400 UF5408 DO-201AD, MIL-STD-202, DO-201AD PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    UF107

    Abstract: UF302 diode UF103 UF303 UF307 DIODE HER306 APPLICATION DIODE HER306 DO27 diode her205 UF207
    Text: - Axial Diode Series HIGH EFFICIENCY RECTIFIERS Maximum Maximum Maximum TYPE Peak Maximum Average Rectified Current Reverse at Half-wave Resistive load 50HZ Voltage Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Recovery Superimposed TA=25°C


    Original     		HER101 DO-41 HER102 HER103 HER104 HER10 D0-41 UF107 UF302 diode UF103 UF303 UF307 DIODE HER306 APPLICATION DIODE HER306 DO27 diode her205 UF207 PDF

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: UF5400, UF5401, UF5402, UF5403, UF5404, UF5405, UF5406, UF5407, UF5408 www.vishay.com Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop


    Original     		UF5400, UF5401, UF5402, UF5403, UF5404, UF5405, UF5406, UF5407, UF5408 22-B106 PDF

    uf5404

    Abstract: uf5402
    Text: UF5400, UF5401, UF5402, UF5403, UF5404, UF5405, UF5406, UF5407, UF5408 www.vishay.com Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • Glass passivated pallet chip junction • Ultrafast reverse recovery time • Low forward voltage drop


    Original     		UF5400, UF5401, UF5402, UF5403, UF5404, UF5405, UF5406, UF5407, UF5408 22-B106 uf5404 uf5402 PDF

    Schottky Diode 50V 3A

    Abstract: diode 50v 5A Schottky Diode 20V 5A diode schottky 1000V 10a
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package DO-201AD/DO-201AE Package Weight mg 1200 Product Group Type No. 1N5820 – 1N5822 SB320 – SB3200 SR320 – SR3100 SB520 – SB5200 SR520 – SR5100 SR820 – SR8100 SD1030 – SD1045


    Original     		DO-201AD/DO-201AE 1N5820 1N5822 SB320 SB3200 SR320 SR3100 SB520 SB5200 SR520 Schottky Diode 50V 3A diode 50v 5A Schottky Diode 20V 5A diode schottky 1000V 10a PDF

    BY228 equivalent

    Abstract: BYD14G RU20A cross reference
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		vSE-db0112-1009 BY228 equivalent BYD14G RU20A cross reference PDF

    power supply dvd player LG

    Abstract: LNK626PG B49 diode smd B34 SMD ZENER DIODE lnk624pg core EEL16 transformer LNK623PG smd DIODE B34 EE16 429 FR104 diode
    Text: Application Note AN-45 LinkSwitch-CV Family Design Guide Introduction The LinkSwitch-CV family is a highly integrated monolithic switching IC designed for off-line power supplies up to 17 W. Ideally suited for DVD player and Set-top box applications, LinkSwitch-CV provides constant voltage without using an


    Original     		AN-45 power supply dvd player LG LNK626PG B49 diode smd B34 SMD ZENER DIODE lnk624pg core EEL16 transformer LNK623PG smd DIODE B34 EE16 429 FR104 diode PDF

    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a PDF

    Schottky Diode 039 B34

    Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		vse-db0001-0809 Schottky Diode 039 B34 S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D PDF

    DIODE smd B44

    Abstract: b48 DIODE schottky ef12.6 core transformer creepage schottky b37 diode LNK613DN lnk616 ee10 transformer EEL-19 EE16W lnk616 pg
    Text: Application Note AN-44 LinkSwitch-II Family Design Guide Introduction of no-load power at 230 VAC without an external bias circuit, and to consume below 30 mW with a low-cost bias circuit. This simplifies meeting harmonized energy efficiency standards such


    Original     		AN-44 DIODE smd B44 b48 DIODE schottky ef12.6 core transformer creepage schottky b37 diode LNK613DN lnk616 ee10 transformer EEL-19 EE16W lnk616 pg PDF

    c548b

    Abstract: transistor D304 2QS02G transistor C548B IC302 transformer smps 300R Quasi-resonant flyback transformer EVALQS-190W-ICE2QS02G ICE2pcs02 D304 TRANSISTOR
    Text: Application Note, V1.1, 2 February 2009 Application Note EVALQS-190W-ICE2QS02G 190W Evaluation Board Based on Quasi-resonant Flyback Converter for LCD TV SMPS Power Management & Supply N e v e r s t o p t h i n k i n g . Published by Infineon Technologies AG


    Original     		EVALQS-190W-ICE2QS02G ICE3BR4765J, EVALPFC2-ICE2PCS02, ICE2PCS02, EVALQRS-ICE2QS02G-80W, ICE2QS02G, AN-CoolMOS-03, ICE2QS01, c548b transistor D304 2QS02G transistor C548B IC302 transformer smps 300R Quasi-resonant flyback transformer EVALQS-190W-ICE2QS02G ICE2pcs02 D304 TRANSISTOR PDF

    AN-40

    Abstract: Power Integrations optocoupler PC817D CELL ee16 lnk EE10 bobbin NB 40 smd transistor 11DQ6 transistor smd ALG 33 ee10 transformer 1N3947
    Text: LinkSwitch-XT Design Guide Application Note AN-40 Introduction The LinkSwitch-XT family is designed for low power adapters and chargers cell/cordless phones, PDAs, digital cameras, portable audio etc , as well as auxiliary supplies employed in applications such as white goods. The ICs combine a high


    Original     		AN-40 AN-40 Power Integrations optocoupler PC817D CELL ee16 lnk EE10 bobbin NB 40 smd transistor 11DQ6 transistor smd ALG 33 ee10 transformer 1N3947 PDF