DIODE TA9 Search Results

G8060

Abstract: ruru8060 RUR 0820 TB-01
Contextual Info: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number

RURU5060

Abstract: TA9909
Contextual Info: RURU5060 Data Sheet January 2000 File Number 2940.3 50A, 600V Ultrafast Diode Features The RURU5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURU5060

Contextual Info: RURU5060 Data Sheet January 2000 File Number 2940.3 50A, 600V Ultrafast Diode Features The RURU5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

10N50A

Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D
Contextual Info: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode

013D3

Abstract: RUR1560 UHC MOS Application of irf840 equivalent irf840 irf840 equivalent irf840 power supply mos 7121 power diode 600V 15A IRF840
Contextual Info: RUR1S1560S September 2002 Data Sheet [ /Title HUF7 6013P 3, HUF76 013D3 S /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level UltraF ET Power MOS- 15A, 600V Ultrafast Diode

UHC MOS

Abstract: RUR1S1560S9A INTERSIL Cross Reference Search 013D3
Contextual Info: RUR1S1560S September 2002 Data Sheet [ /Title HUF7 6013P 3, HUF76 013D3 S /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level UltraF ET Power MOS- 15A, 600V Ultrafast Diode

uncooled laser butterfly

Abstract: lucent laser module Laser Diode sdh butterfly D370-Type lucent laser module D370 dfb laser diode high power TA-983
Contextual Info: Uncooled D370/D371-Type Mini-DIL Laser Modules Lucent's uncooled m ultiquantum -well D370-type FabryPerot and uncooled DFB D371-type laser modules consist of a laser diode coupled to a single-mode fiber pigtail. The devices are packaged in a standard 8-pin

MCT thyristor

Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
Contextual Info: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC

MCT thyristor

Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
Contextual Info: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode March 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability A • 800A/µs di/dt Capability

MCT thyristor

Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
Contextual Info: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC

Contextual Info: H ^ r tm ^ s • « / < S e m ico n d ucto r mm M m m T 3 5 P 6 F 1 D \ 35A, 600V P-Type MOS Controlled hyristor MCT with Anti-Parallel Diode W tH O B ^ o E S IG N S - ApriM99n V r r : ^ S S OBSOLi ! i - - — 1 Package Featuw§ • 35A ,-6 00V JEDEC STYLE TO-247

IRF620 application

Abstract: TA9600 IRF620 TB334 transistor irf620
Contextual Info: IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

Contextual Info: HRP2540 S em iconductor April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device

DF378F

Abstract: DF103B HRP2540 NR231A
Contextual Info: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device

DF378F

Abstract: DF103B HRP2540 NR231A single phase full controlled rectifier component list
Contextual Info: HRP2540 December 2001 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device was designed for use as the output rectifier in the three

NR231A

Abstract: DF378F DF103B single phase full controlled rectifier component list HRP2540
Contextual Info: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device

Contextual Info: m i c r o e l e c t r o n i c s gr oup Advance Data Sheet February 1997 Lucent Technologies Bell Labs Innovations D371-Type Digital Uncooled DFB Mini-DIL Laser Module a High output power: typical 2.0 mW peak power coupled into single-mode fiber • Hermetically sealed active components

lucent laser module

Abstract: Lucent Laser 2000 lucent laser module D370 D370 D370-10F
Contextual Info: Advance Data Sheet September 1997 microelectronics group Lucent Technologies Bell Labs Innovations D370-Type Digital Uncooled Mini-DIL Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber; 0.2 mW and 2.0 mW versions available

lucent laser module

Abstract: Lucent Laser 2000 Laser Components
Contextual Info: Advance Data Sheet September 1997 microelectronics group Lucent Technologies Bell Labs Innovations D373-Type Digital Uncooled 2.5 Gbits/s Mini-DIL Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber; 0.2 mW and 2.0 mW versions available

D370

Contextual Info: Advance Data Sheet February 1997 microelectronics group Lucent Technologies Bell Labs Innovations D370-Type Digital Uncooled Mini-DIL Laser Module • High output power: typically 1.0 mW peak power coupled into single-mode fiber. 0.2 mW and 2.0 mW versions available

Contextual Info: Data Sheet January 1999 group Lucent Technologies Bell Labs Innovations D371-Type Digital Uncooled DFB FastLight Laser Module Hermetically sealed active components Internal back-facet monitor Qualification program: Bellcore TA-983 Applications • Long-reach SONET OC-3/OC-12 systems

Contextual Info: Advance Data Sheet August 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations D371-Type Digital Uncooled DFB FastLight Laser Module • Hermetically sealed active components ■ Internal back-facet monitor ■ Qualification program: Bellcore TA-983

lucent DFB laser application

Contextual Info: Advance Data Sheet August 1997 microelectronics group Lucent Technologies Bell Labs Innovations A371-Type Analog Uncooled Isolated DFB Mini-DIL Laser Module • High output power: typically 2.0 mW peak power coupled into single-mode fiber ■ Hermetically sealed active components