scr 300 amps
Abstract: T30P600S scr 250 amps 2000 Volt D77P4400 D52P1800S T52P800S 5000 volt scr D30P400S T30P700S D38P1000S
Text: DIODE CAPSULES & SCR CAPSULES Diode Capsules CKE Number D30P400S D30P1200S D38P750S D38P1000S D38P1000S1 D38P1000S3 D38P1200S D38P1500S D52P1800S D52P2400S D77P2900S D77P3900S D77P4400S Vrrm volts 500-1500 500-1500 1500-3000 1000-2000 1500-2600 3500-4500
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D30P400S
D30P1200S
D38P750S
D38P1000S
D38P1000S1
D38P1000S3
D38P1200S
D38P1500S
D52P1800S
D52P2400S
scr 300 amps
T30P600S
scr 250 amps 2000 Volt
D77P4400
D52P1800S
T52P800S
5000 volt scr
D30P400S
T30P700S
D38P1000S
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D77P2900S
Abstract: T52P800S SCR 25 amps PIV 600 D77P4400 D38P1000S3 Ignitron D77P4400S Standard recovery 1200 Amp 1600 volt high power diode D38P750S T30P600S
Text: DIODE CAPSULES & SCR CAPSULES Diode Capsules Cathode Anode Inches Strike Distance = .73 inch Creepage Distance = 1.17 inch Strike Distance = .38 inch Creepage Distance = .58 inch 1.30 1.35 2 Places .130 .150 Depth: .070 .080 .980 .150 Depth: .070 .080 1.590
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CL2A335037502C
D77P2900S
T52P800S
SCR 25 amps PIV 600
D77P4400
D38P1000S3
Ignitron
D77P4400S
Standard recovery 1200 Amp 1600 volt high power diode
D38P750S
T30P600S
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Untitled
Abstract: No abstract text available
Text: SKNa 202 Stud Diode Avalanche Diode SKNa 202 8OP2Q:1 ?N2B@ S 677 $ O:&=1:5: %&'5+ K3/ 3(,1(5350 3.+/&,13(Q F:&= 2:1( 8 [D77 ]777 ]T77 ]677 ]D77 ]V77 ?N$8 S T77 $ O01(U CV7W >) S V7 XFQ @HI& T7T¥[D @HI& T7T¥]7 @HI& T7T¥]T @HI& T7T¥]6 @HI& T7T¥]D @HI& T7T¥]V
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OC77Q
7E66W
7E66NW
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Untitled
Abstract: No abstract text available
Text: SKNa 102 Stud Diode Avalanche Diode SKNa 102 8NO2P:1 ?M2B@ R D77 $ N:&=1:5: %&'5+ J3/ 3(,1(5350 3.+/&,13(P E:&= 2:1( 8 YZ77 ¥777 ¥D77 ¥677 ¥Z77 ¥T77 ?M$8 R CD6 $ N01(S CT7U >) R T7 VEP @GH& C7D[YZ @GH& C7D[¥7 @GH& C7D[¥D @GH& C7D[¥6 @GH& C7D[¥Z
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NC77P
CT777
CD677
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Untitled
Abstract: No abstract text available
Text: HVGT HV-T77 20kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm HV-T77 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features
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HV-T77
HV-T77
DO-312
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Untitled
Abstract: No abstract text available
Text: HVCA HV-T77 20kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm HV-T77 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features
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HV-T77
HV-T77
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1SS133 T77
Abstract: diode T-77 1SS133 1SS133 T-77 T-77 diode T77 t 77 do-34 rohm
Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction
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1SS133
DO-34
1SS133 T77
diode T-77
1SS133
1SS133 T-77
T-77
diode T77
t 77
do-34 rohm
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1SS133 T-77
Abstract: No abstract text available
Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction
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1SS133
DO-34
1SS133 T-77
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T72 diode of 45 kv
Abstract: diode T-77 1SS244 diode T77 77-1 T-77 T-72 diode
Text: 1SS244 Diodes Switching diode 1SS244 zApplications High voltage switching General purpose rectification zExternal dimensions Unit : mm CATHODE BAND (BLACK) TYPE NO. (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 2 4 4 2.7±0.3
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1SS244
DO-34
T72 diode of 45 kv
diode T-77
1SS244
diode T77
77-1
T-77
T-72 diode
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T72 diode of 45 kv
Abstract: No abstract text available
Text: 1SS244 Diodes Switching diode 1SS244 zApplications High voltage switching General purpose rectification zExternal dimensions Unit : mm CATHODE BAND (BLACK) TYPE NO. (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 2 4 4 2.7±0.3
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1SS244
DO-34
T72 diode of 45 kv
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MTZJ5.68
Abstract: No abstract text available
Text: MTZJ5.1B Diodes Zener diode MTZJ5.1B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. ３． ６ Ｂ 2.7±0.3 29±1 29±1
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DO-34
MTZJ5.68
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MTZJ-9.1B
Abstract: 9.1b diode MTZJ9.1B DIODE 24B T-77
Text: MTZJ9.1B Diodes Zener diode MTZJ9.1B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1
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DO-34
MTZJ-9.1B
9.1b diode
MTZJ9.1B
DIODE 24B
T-77
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5.1B mtzj
Abstract: No abstract text available
Text: MTZJ9.1B Diodes Zener diode MTZJ9.1B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. ３． ６ Ｂ 2.7±0.3 29±1 29±1
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DO-34
5.1B mtzj
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Untitled
Abstract: No abstract text available
Text: MTZJ4.7B Diodes Zener diode MTZJ4.7B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. ３． ６ Ｂ 2.7±0.3 29±1 29±1
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DO-34
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6.2B diode
Abstract: MTZJ5.68 T-77 MTZJ6.2B
Text: MTZJ6.2B Diodes Zener diode MTZJ6.2B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1
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DO-34
6.2B diode
MTZJ5.68
T-77
MTZJ6.2B
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Untitled
Abstract: No abstract text available
Text: MTZJ4.3B Diodes Zener diode MTZJ4.3B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 ３． ６ Ｂ 2.7±0.3 29±1 29±1
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DO-34
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IN4002A
Abstract: IN4002 1N4002A
Text: 7fi2ûcn cl 000=1015 T77 • RHM ROHm Specilicanon Page Products Type T of 1N4002A, Glass Sealed R ectifying Diode i Glass Sealed R ectifying Diode 1. PRODUCTS S ilic o n d iffu sed ju n ctio n 1H4002A 2. TYPE 3. APPLICATION General r e c tif ic a tio n
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1N4002A;
1N4002A
D0-41)
RR4002
IN4002A
IN4002
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Untitled
Abstract: No abstract text available
Text: CLED1F Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The Clairex CLED1F is a Gallium Arsenide infrared emitting diode in a flat window hermetic TO-46 package. It emits an intense band of radia tion when forward biased. The Clairex LED is ideally
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TDA8808
Abstract: FHFM 103 plastic Disc Capacitors 808T SI 7300 S028 TDA8808AT TDA8808T
Text: TD A 8808T TDA8808AT PHOTO DIODE SIGNAL PROCESSOR FOR COMPACT DISC PLAYERS GENERAL DESCRIPTION The TDA8808 is a bipolar integrated circuit designed fo r use in compact disc players w ith a single spot read-out system. It amplifies the photo-diode signals and processes the error signals fo r the
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TDA8808T
TDA8808AT
TDA8808
TDA8808T
TDA8808AT
711002b
FHFM
103 plastic Disc Capacitors
808T
SI 7300
S028
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TDA8808AT
Abstract: 808T S028 TDA8808 TDA8808T LDT1 TA72 GCLF A2-255 lbgc
Text: TDA8808T TDA8808AT PHOTO DIODE SIGNAL PROCESSOR FOR COMPACT DISC PLAYERS G E N E R A L D E S C R IP T IO N The TD A 8808 is a bipolar integrated circuit designed for use in compact disc players with a single spot read-out system. It amplifies the photo-diode signals and processes the error signals for the
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TDA8808T
TDA8808AT
TDA8808
TDA8808T
A8808AT
7110fl2b
TDA8808AT
808T
S028
LDT1
TA72
GCLF
A2-255
lbgc
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V7560
Abstract: Infrared Emitting Diode TO46 package UJ 78A
Text: CLED1F Gallium Arsenide Infrared Em itting Diode G E N E R A L D E SC R IP T IO N — T he C lairex CLED 1F is a G allium A rsenide in frared e m ittin g diode in a fla t window herm etic TO-46 package. I t em its a n in ten se band of ra d ia tion w hen forw ard biased. T he C lairex LED is ideally
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100mA
V7560
Infrared Emitting Diode
TO46 package
UJ 78A
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Untitled
Abstract: No abstract text available
Text: International SRectifier PD-2.450 HFA200MD40C Ultrafast, Soft Recovery Diode HEXFRED" Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG LIJG LUG TERMINAL TER «INAL TERMINAL ANOOE1 CAT HODE ANODE2
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HFA200MD40C
2200nC
Liguria49
554S2
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Untitled
Abstract: No abstract text available
Text: PD -9.1599 International K g l Rectifier IRG4BC20KD PREUMNARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short
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IRG4BC20KD
T0-220AB
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diode T-77
Abstract: diode T77 39 77 zener diode t77 5-1 MTZJ 7.5 B T-77 T 77 T-77 T 77 zener MTZJ SERIES ZENER DIODES T 77 -15
Text: Diodes Zener Diodes ROHM is the largest switching diode manufacturer in terms of volume. ROHM can deliver reliable diodes for various elec tronic industries all over the world. lz=5mA Zener voltage assures easy power saving design of electronic equipment.
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500mW)
1N5231B
1N5233B
1N5234B
1N5236B
5237B
1N5238B
1N5239B
1N5240B
1N5241B
diode T-77
diode T77
39 77 zener diode
t77 5-1
MTZJ 7.5 B T-77
T 77
T-77
T 77 zener
MTZJ SERIES ZENER DIODES
T 77 -15
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