T589N
Abstract: TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N
Text: Anpreßkraft Scheibenbauelemente Clamping Force Disc-Components Diagramm: Federsäulenkurven 1 - 8 für Komplettsätze for complete stacks Diode Diode D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N D2659N D5809N D8019N Anpreßkraft [kN] Clamping Force [kN]
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D428N
D448N
D660N
D748N
D758N
D798N
D1029N
D1049N
D2209N
D2228N
T589N
TO41
TO-50
TO57
disc thyristor
TO100
D1029N
D1049N
D2209N
D2659N
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marking POJ diode
Abstract: MMBV432LTI MARKING YA SOT-23 MMBV432LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Silicon ~ning Order this document by MMBV432LT1/D DATA Diode MMBV432LTI This device is designed for FM tuning, general frequency control and tuning, or any top–of–th+line application requiring back–to–back diode configuration for minimum
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MMBV432LT1/D
MMBV432LTI
OW1-2447
602-2W609
140W77
MMBV432LTl~
marking POJ diode
MMBV432LTI
MARKING YA SOT-23
MMBV432LT1
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IN5225
Abstract: 1N4154 marking DO35 DO-35 BLUE CATHODE
Text: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.
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1N4154
DO-35
IN5225
1N4154
marking DO35
DO-35 BLUE CATHODE
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1N4154
Abstract: No abstract text available
Text: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.
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1N4154
DO-35
1N4154
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Untitled
Abstract: No abstract text available
Text: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.
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1N4154
DO-35
1N4154TR
DO-35
1N4154
DO-35-2
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5082-2804
Abstract: 5082-2805 1N5712 5082-2080 2800-Series 5082-2826 5082-XXXX 5082-2811 1N5711 RS-296-D
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2835 5082-2835 General purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimised for
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340mV.
1N5711,
1N5712,
5082-xxxx
5082xxxx
1N5712
5082-28xx
T25/1N57xx
5082-2804
5082-2805
1N5712
5082-2080
2800-Series
5082-2826
5082-XXXX
5082-2811
1N5711
RS-296-D
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1S923
Abstract: IN5225 175 WIV High Switching
Text: 1S923 1S923 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. 0.500 Minimum 12.70 Typ 1.000
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1S923
DO-35
1S923
IN5225
175 WIV High Switching
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IN5225
Abstract: 1N486B DO-35 PACKAGE liner marking code
Text: 1N486B General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. General Purpose Low Leakage Diode This product is light sensitive, any damage to the body coating
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1N486B
DO-35
IN5225
1N486B
DO-35 PACKAGE
liner marking code
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T1081N
Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
Text: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N
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kuka-2003-inhalt
T1901N
T1503N
T201N
T1081N
T1201N
T501N
T551N
T553N
T739N
T1081N
T553N
eupec igbt
EUPEC T1503N
kuka-2003-inhalt.qxd
T2351N
T2563
T1049
T1601
T1869N
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1N5712 spice
Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented
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1N5711
1N5711
1N5712
1N5711,
1N5712,
5082-xxxx
5082xxxx
1N5712 spice
1N5711 spice
5082-2804
2800-Series
5082-2811
RS-296-D
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sanyo 1500uF 6.3V capacitor
Abstract: K30 mosfet ceramic capacitor 4700pf 63V R5C DIODE sanyo 1500UF pentium MOTHERBOARD CIRCUIT diagram R5B transistor PBYR1035B IRL3303 IRU3033
Text: IRU3034 8-PIN PWM SWITCHER CONTROLLER IC PRELIMINARY DATASHEET FEATURES DESCRIPTION 8-pin SOIC switching controller with HICCUP current limiting reduces diode power dissipation to less than 1% of normal operation Soft start capacitor allows for smooth output
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IRU3034
100nS
P55CTM
IRU3034
6MV1500GX
87kHz
sanyo 1500uF 6.3V capacitor
K30 mosfet
ceramic capacitor 4700pf 63V
R5C DIODE
sanyo 1500UF
pentium MOTHERBOARD CIRCUIT diagram
R5B transistor
PBYR1035B
IRL3303
IRU3033
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T120
Abstract: T150
Text: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 96 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 96 Standard Gate Leads for Disc Type Devices Leads and gate leads must be ordered separately Disc outline/page Material T41.14/75
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kuka-2003-inhalt
26K/76
35K/76
26K/77
26K/79
T120
T150
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FJH1102
Abstract: 3310 h3 22 52
Text: FJH1102 Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY General Description: An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere.
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FJH1102
DO-35
FJH1102
3310 h3 22 52
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cs-7 r5a
Abstract: sanyo 1500uF 6.3V capacitor PBYR1035B sanyo 1500UF R5C DIODE SMT resistor SANYO 1000uF 35V TSC500 sanyo 1500uF capacitor SURFACE MOUNT RESISTOR
Text: Data Sheet No. PD94148 IRU3034 8-PIN PWM SWITCHER CONTROLLER IC DESCRIPTION FEATURES 8-Pin SOIC switching controller with HICCUP current limiting reduces diode power dissipation to less than 1% of normal operation Soft-Start capacitor allows for smooth output
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PD94148
IRU3034
100ns)
IRU3034
6MV1500GX
87KHz
cs-7 r5a
sanyo 1500uF 6.3V capacitor
PBYR1035B
sanyo 1500UF
R5C DIODE
SMT resistor
SANYO 1000uF 35V
TSC500
sanyo 1500uF capacitor
SURFACE MOUNT RESISTOR
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Untitled
Abstract: No abstract text available
Text: Philips Semicon tTE ] bbS3^31 00Sbl7fl T50 H A P X Silicon planar epitaxial Product specification N AP1E:R PHILIPS/DISCRETE BAL74 high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching
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00Sbl7fl
BAL74
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Untitled
Abstract: No abstract text available
Text: SONY 1000mW High Power Laser Diode Description The SLD304XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by controlling the laser chip temperature.
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1000mW
SLD304XT
900mW
SLD304XT
M-247
LO-10)
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Untitled
Abstract: No abstract text available
Text: ESJ A9 8 6 k V 8 , k V : Outline Drawings HIGH VOLTAGE SILICO N DIODE E S JA 9 8 (i, -yT'5:1 l- T iijh L fc E S JA 9 8 is high reliability resin molded type high seepd high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.
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S30S3*
95t/R89
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NE527
Abstract: 0405B NE527D NE527N NE529
Text: Philips Semiconductors Linear Products Product specification Voltage comparator NE527 DESCRIPTION PIN CONFIGURATIONS_ The NE527 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology with
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NE527
NE529
711002b
0405B
NE527D
NE527N
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NE527
Abstract: TSE 151 NE527D
Text: Philips Semiconductors Linear Products Product specification Voltage comparator NE527 DESCRIPTION PIN CONFIGURATIONS_ The NE527 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology with
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NE527
NE527
NE529
TSE 151
NE527D
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DIODE T50
Abstract: MMBD7000 mmbd1201 MA670
Text: MMBD7000 & Discrete POW ER & Signal Technologies National Semiconductor’ MMBD7000 High Conductance Ultra Fast Diode Sourced from P roce ss 1P. Se e MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol ta^scum essotnemisenoted Parameter Units
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MMBD7000
MMBD1201-1205
L5D1130
004G5A1
0040Sfl2
DIODE T50
MMBD7000
mmbd1201
MA670
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1SS400
Abstract: No abstract text available
Text: 1SS400 Diodes_ High-Speed Switching Diode 1SS400 •E xternal dim ensions Units: mm •A pplications High speed switching CATHODE MARK •Features 1) Extremely small surface mounting type.(EMD2) 2) High Speed.(typical recovery time = 1.2ns Typ.)
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1SS400
1SS400
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Dual diode fast, high-voltage FEATURES BYM359X-1500 SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab
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BYM359X-1500
BYM359X
16kHz
56kHz
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3001 SB20-03B Schottky Barrier Diode 30V, 2A Rectifier Applications • High frequency rectification switching regulators, converters, choppers to>II Features • Low forward voltage (Vp max = 0.55V) • Fast reverse recovery time (trr max = 20ns)
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EN3001
SB20-03B
No3001-3/3
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1648M
Abstract: 1648m/b
Text: ^ MOTOROLA Military 1648M Voltage Controlled Oscillator ELECTRICALLY TESTED PER: MPG 1648M The 1648M requires an external parallel tank circuit consisting of the inductor (L) capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage
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1648M
1648M
1648m/b
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