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    JKL Components Corporation ZFC-20BP1000-MW

    1 METER LED CHANNEL WITH WHITE D
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    DigiKey ZFC-20BP1000-MW Bulk 1 1
    • 1 $28.36
    • 10 $22.301
    • 100 $28.36
    • 1000 $18.6375
    • 10000 $18.6375
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    Microchip Technology Inc ATA5702F1000M-WDQW

    IC PASS ENTRY 32VQFN
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    DigiKey ATA5702F1000M-WDQW Reel
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    Avnet Silica ATA5702F1000M-WDQW 24 Weeks 1
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    Abracon Corporation AWSZT-10.00MWD-T

    Resonator 10MHz 30pF 2-Pin Surface Mount T/R - Tape and Reel (Alt: AWSZT-10.00MWD-T)
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    Avnet Americas AWSZT-10.00MWD-T Reel 1,000
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    Eaton Corporation 121B10-00M-WB

    Circuit Breakers SHORTSTOP CIRCUIT BREAKER
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    Mouser Electronics 121B10-00M-WB
    • 1 $4.06
    • 10 $3.35
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    RS 121B10-00M-WB Bulk 12 Weeks 250
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    Master Electronics 121B10-00M-WB 148
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    • 100 $2.51
    • 1000 $2.01
    • 10000 $1.92
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    Eaton Corporation 122B10-00M-WB

    Circuit Breakers SHORTSTOP CIRCUIT BREAKER
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    Mouser Electronics 122B10-00M-WB
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    RS 122B10-00M-WB Bulk 12 Weeks 250
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    1000MW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b044-1204-01x-z

    Abstract: No abstract text available
    Text: ELECTRICAL: CURRENT RATING: 1A CURRENT VOLTAGE: 250VAC RMS CONTACT RESISTANCE: < 30mW AT 1AMP DC INSULATOR RESISTANCE: > 1000MW AT 500VDC DIELECTRIC WITHSTANDING VOLTAGE: 500VAC FOR 1 Min. OPERATING TEMPERATURE: -55° C TO +105° C CAPCITANCE: 2pF Max. MECHANICAL:


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    PDF 250VAC 1000MW 500VDC 500VAC 50ute B044-1204-01X-Z b044-1204-01x-z

    zener SOD-123 1A

    Abstract: zener zd 31 ZGFM103V6B-M z7 SOD-123 ZGFM1022B-M ZGFM1027B-M
    Text: WILLAS ZGFM103V3B-M THRU 1000mW Surface Mount Zener Diodes-3.3V-100V ZGFM10100B-M SOD-123-L PACKAGE Pac k ag e o u t l i n e Feat u r es SOD-123-L • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    PDF 1000mW V-100V OD-123-L ZGFM103V3B-M ZGFM10100B-M MIL-STD-19500 OD-123-L UL94-V0 zener SOD-123 1A zener zd 31 ZGFM103V6B-M z7 SOD-123 ZGFM1022B-M ZGFM1027B-M

    diode block 805

    Abstract: C6802 IEC60825-1 SLD304B 15c diode
    Text: SLD304B Block-type 1000mW High Power Laser Diode Description The SLD304B is a high power laser diode mounted on a 3 x 3 × 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts.


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    PDF SLD304B 1000mW SLD304B M-261 1000mW 900mW, diode block 805 C6802 IEC60825-1 15c diode

    Untitled

    Abstract: No abstract text available
    Text: GLP-III-532 300-1000mW Portable Green DPSS Laser System Portable 532nm DPSS Laser System for professional application, featuring 4-way safety system, catch button for convenient operation, and LED status indicator. 4-way safety system: 1. 2. 3. 4. slideable front cover


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    PDF GLP-III-532 300-1000mW 532nm TEM00

    RLTMIL_1342_1-1000MW

    Abstract: No abstract text available
    Text: 16.08.2010 rltmil_1342_1-1000mw.doc 1 of 2 16.08.2010 rltmil_1342_1-1000mw.doc 2 of 2


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    PDF 1-1000mw RLTMIL_1342_1-1000MW

    voltage regulator -zener

    Abstract: AZD27C21
    Text: AZD27C21 VOLTAGE REGULATOR ZENER DIODES VOLTAGE 21 Volts 1 Watt POWER • Sillicon Planar Zener Diode • 1000mW Power Dissipation 0.115 2.90 0.106(2.70) • Zener and surge current specification 0.044(1.10) 0.031(0.80) 0.075(1.90) 0.067(1.70) FEATURES • Low leakage current


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    PDF AZD27C21 1000mW 2002/95/EC IEC61249 OD-123FL, MIL-STD-750, 2012-REV voltage regulator -zener AZD27C21

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS FUTURE BUS CONNECTOR 1F Series Rec. Solder Type 2.0mm Pitch 5 Rows Mechanical Contact Retention Force: 0.50Kg min. Electrical Voltage Rating: 750V Current Rating: 1A Contact Resistance: 55mW max. Dielectrical Withstanding Voltage: 1000V Insulation Resistance: 1000MW min.


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    PDF 1000MW 1F22090A-P021SN-AN 1F22090A 2DP021SN 22-May-2008

    10P10

    Abstract: FOXCONN PACKAGE
    Text: SPECIFICATIONS Contact Retention Force: 0.21Kg 0.44Lb min. Durability: 100 Cycles Voltage Raging: 120VAC Current Rating: 0.5A Contact Resistance: 30mW max. Dielectrical Withstanding Voltage: 300VAC Insulation Resistance: 1000MW min. Housing: LCP, UL 94-0, Ivory White


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    PDF 120VAC 300VAC 1000MW 20POS. 30POS. 10P10 FOXCONN PACKAGE

    SLD304XT

    Abstract: C6802 LD chip laser 790 nm
    Text: SLD304XT 1000mW高出力レーザダイオード 概 要 SLD304XTは,熱設計と電気設計を独立に行う事が 可能です。 TE(Thermo Electric)クーラーを内蔵しております。 M-273 特 長 • 高出力 推奨光出力 Po=900mW


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    PDF SLD304XT 1000mW M-273 Po900mW Po900mW, Tth25 J88066F19-PS SLD304XT C6802 LD chip laser 790 nm

    mmccard

    Abstract: No abstract text available
    Text: FLS Series Specifications Insulation Resistance: Withstanding Voltage: Contact Resistance: Voltage Rating: Current Rating: Operating Temp. Range: Coplanarity: Mating Cycles: MMC-Card Reader Push/Push Ejection 1000MW min. at 500V DC 500V AC for 1 minute 40mW max. at 1mA / 20mV max.


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    PDF 1000MW 250Vrms UL94V-0 mmccard

    SMB735R-1100

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED High Power Top LED SMB735R-1100 Lead Pb Free Product – RoHS Compliant SMB735R-1100 High Power Top LED SMB735R-1100 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package and molded with epoxy resin. These devices are available to be operated and 1000mW at IFP=4A.


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    PDF SMB735R-1100 SMB735R-1100 1000mW 1000um 1000um 735nm 72-hour-

    10VDC

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • PZT2907A PNP Plastic-Encapsulate Transistors Surface Mount SOT-223 Package Capable of 1000mWatts of Power Dissipation Electrical Characteristics @ 25°C Unless Otherwise Specified


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    PDF PZT2907A OT-223 1000mWatts OT-223 -50Vdc, -50mAdc, -20Vdc, 100MHz) -10Vdc, 100kHz) 10VDC

    zener diode marking c21

    Abstract: No abstract text available
    Text: AZD27C21 VOLTAGE REGULATOR ZENER DIODES VOLTAGE 21 Volts 1 Watt POWER • Sillicon Planar Zener Diode • 1000mW Power Dissipation 0.115 2.90 0.106(2.70) • Zener and surge current specification 0.044(1.10) 0.031(0.80) 0.075(1.90) 0.067(1.70) FEATURES • Low leakage current


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    PDF AZD27C21 1000mW 2002/95/EC IEC61249 OD-123FL, MIL-STD-750, 2012-REV zener diode marking c21

    RLTMRL_660_100-1000MW

    Abstract: No abstract text available
    Text: RLTMRL-660 / 100-1000mW RED DIODE LASER At 660nm Diode red laser 660nm is made features of ultra compact, long lifetime, low cost and easy to operate, which is widely used in measure, spectrum analyzing, laser light show, etc. Specifications: Wavelength nm


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    PDF RLTMRL-660 100-1000mW 660nm 660nm 80-260VAC) PN156) 235kg 10-40kHz MRL-660 671nm. RLTMRL_660_100-1000MW

    Termistor

    Abstract: 2 Wavelength Laser Diode termistor 104 1000mW laser 1w infrared led chip thermistor medical device high power laser laser diode 780 nm SLD304XT SLD304XT-1
    Text: SLD304XT 1000mW High Power Laser Diode Description The SLD304XT allows independent thermal and electric design. This laser diode has a built-in TE Thermo Electric cooler. Equivalent Circuit Features • High power Recommended optical power output Po = 900mW


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    PDF SLD304XT 1000mW SLD304XT 900mW 65MAX M-273 LO-10) Termistor 2 Wavelength Laser Diode termistor 104 1000mW laser 1w infrared led chip thermistor medical device high power laser laser diode 780 nm SLD304XT-1

    ZS140

    Abstract: ZS170
    Text: Formosa MS Chip Zener Diodes ZS110 THRU ZS330 Surface mount Zener type SMA Features 1000mWatt Power Dissipation 0.189 4.8 0.165(4.2) 0.012(0.3) Typ. High Voltages from 110V ~ 330V 0.106(2.7) 0.091(2.3) Designed for mounting on small surface Extremely thin/leadless package


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    PDF ZS110 ZS330 1000mWatt MIL-STD-750, 300us ZS140 ZS170

    Untitled

    Abstract: No abstract text available
    Text: SONY SLD304B Block-type 1000mW High Power Laser Diode Description The SLD304B is a high power laser diode mounted on a 3 x 3 x 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts.


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    PDF SLD304B 1000mW SLD304B 1000mW M-261

    dtz tt11

    Abstract: TT11 smd zener code FTZ56E TT12 UMZ12N
    Text: RDNrn Zener Diodes S M •L in e Up Maximum power dissipation Pd is 200mw to 1000mw (IW ) . Selection among these series with various packages assures to match specific application and requirement. Mm wan Series DTZ Series PTZ Series RLZ Series RLZ J Series


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    PDF 200mw 1000mw LL-34 RLZ5000 UMZ12N dtz tt11 TT11 smd zener code FTZ56E TT12 UMZ12N

    15955

    Abstract: No abstract text available
    Text: Zener Diodes S M •L in e Up Maximum power dissipation Pd is 200mw to 1000mw (IW) to match specific application and requirement. Series Package P (m W ) DSM PSM LL-34 LL-34 LL-34 SSD UMD UMD UMD SMD FMD DTZ Series RI.Z Seríes H Z J Series RIJZ5000 Series


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    PDF 200mw 1000mw RIJZ5000 15955

    Untitled

    Abstract: No abstract text available
    Text: SONY SLD304XT 1000mW High Power Laser Diode Description The SLD304XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by controlling the laser chip temperature.


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    PDF SLD304XT 1000mW SLD304XT 900mW M-247 LO-10)

    SLD304B

    Abstract: SLD304
    Text: SLD304B SONY Block-type 1000mW High Power Laser Diode D escriptio n SLD304B is a high power laser diode m ounted on a 3 x 3 x 5 m m Copper block. It is ideal fo r applications which require a minimal distance between the laser facet and external optical parts.


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    PDF SLD304B 1000mW SLD304B SLD3048 600mW 900mW) SLD304

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES □ FEATURES 66MHz Pipelined Operation Triple 8-Bit D/A Converters 256x24 Color Palette RAM 3x24 Overlay Registers RS-343A/RS-170 Compatible Outputs +5V CMOS Monolithic Construction 40-Pin DIP or Small 44-Pin PLCC Package Power Dissipation: 1000mW


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    PDF 66MHz 256x24 RS-343A/RS-170 40-Pin 44-Pin 1000mW 256x24 ADV453 66MHz 40MHz

    2TX650

    Abstract: BFS97 BFS98 ZTX337 ZTX338 ZTX452 MPSA06 MPSA56 ZTX451 ZTX454
    Text: 5bE D m In ? Q S ? ñ 00DbT3T S03 • Z E T B TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1000mW at 25 °C ambient temperature.


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    PDF ZTX4555 ZTX555 ZTX454 ZTX554 ZTX4535 ZTX553 ZTX452 SO-94 SO-95 SO-97 2TX650 BFS97 BFS98 ZTX337 ZTX338 MPSA06 MPSA56 ZTX451

    GREENCONN

    Abstract: A003
    Text: REV. LOCAS. 01 NEW .Ifi 7Q+Í1.1Í DESCRIPTION INITIAL RELEASE. F DATE 2008.8.20 DRAWN F Specifications Current Rating: 1Amp Insulation Resistance: 1000MW Min. Dielectric Withstanding: 300V AC Contact Resistance: 20mW Max. Operating Temperature:-40'C to +105'C


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    PDF 1000MW PIN20 SEA263 SEA263-A003CXAX SEA263- A003CXAX GREENCONN A003