DIODE T2 4A Search Results

K460P3

Abstract: TA49408 diode t2 4a ISL9K460P3 TB334
Contextual Info: ISL9K460P3 4A, 600V Stealth Dual Diode General Description Features The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft

K460P3

Abstract: K460p TA49408 200a gto preliminary
Contextual Info: ISL9K460P3 4A, 600V Stealth Dual Diode General Description Features The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft

IRF840

Abstract: ISL9R460S2 TA49408 TB334
Contextual Info: ISL9R460S2 May 2001 Data Sheet 4A, 600V Stealth Diode Features itle UF7 3P The ISL9R460S2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

Contextual Info: ISL9K460P3 4A, 600V Stealth Dual Diode General Description Features The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft

K460P3

Abstract: K460p ISL9K460P3 TA49408 TB334
Contextual Info: ISL9K460P3 4A, 600V Stealth Dual Diode General Description Features The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft

R460PF2

Abstract: TA49408 4A600V ISL9R460PF2 TB334 R460P
Contextual Info: ISL9R460PF2 4A, 600V Stealth Diode General Description Features The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery

R460p2

Abstract: ISL9R460S2 ISL9R460S3S ISL9R460S3ST TA49408 TB334 ISL9R460P2
Contextual Info: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in

Contextual Info: ISL9K460P3 Data Sheet FINAL DRAFT April 2001 4A, 600V Stealth Dual Diode Features itle UF7 3P The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

R460P2

Abstract: IRF840 ISL9R460P2 TA49408 TB334 R460P
Contextual Info: ISL9R460P2 Data Sheet May 2001 File Number 5031 4A, 600V Stealth Diode Features itle UF7 3P The ISL9R460P2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

Contextual Info: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in

R460P2

Abstract: t2 smps R460S3S ISL9R460P2 ISL9R460S2 ISL9R460S3S ISL9R460S3ST TA49408 TB334 diode t2 4a
Contextual Info: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

Application of irf840

Abstract: IRF840 ISL9R460S3S TA49408 TB334
Contextual Info: ISL9R460S3S May 2001 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 4A, 600V Stealth Diode Features The ISL9R460S3S is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

Application of irf840

Abstract: ISL9K460P3 ISL9R460P3 K460P3 TA49408 TB334 20mH 1A
Contextual Info: ISL9K460P3 May 2001 Data Sheet 4A, 600V Stealth Dual Diode Features itle UF7 3P The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery

R460PF2

Abstract: ISL9R460PF2 TA49408 TB334
Contextual Info: ISL9R460PF2 4A, 600V Stealth Diode General Description Features The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery

Contextual Info: ISL9R460PF2 4A, 600V Stealth Diode General Description Features The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery

Contextual Info: RGT8NS65D Data Sheet 650V 4A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 4A VCE(sat) (Typ.) 1.65V PD 65W lFeatures LPDS (TO-263S) (2) (1) (3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss

FDPF5n50u

Abstract: diode 4A 400v ultra fast N-channel 500V mosfet
Contextual Info: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF5n50u

Contextual Info: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

82583

Abstract: Si5853DDC-T1-E3 SI5853DDC
Contextual Info: New Product Si5853DDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES • LITTLE FOOT Plus Schottky Power MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V

Si5853CDC

Contextual Info: Si5853CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21

MARKING CODE JF

Contextual Info: New Product Si5853CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a - 20 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • LITTLE FOOT Plus Schottky Power MOSFET

Si5853CDC

Abstract: Vishay DaTE CODE 1206-8 72334/MTN
Contextual Info: New Product Si5853CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a - 20 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 • LITTLE FOOT Plus Schottky Power MOSFET

FDPF5N50UT

Abstract: FDPF5n50u FDP5N50U
Contextual Info: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Si5853DDC-T1-E3

Abstract: JH MARKING CODE SCHOTTKY DIODE
Contextual Info: Si5853DDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21