DIODE T 77 Search Results

dissipator

Abstract: GE-SPCO SF116 TI 745A A800 A800L A800LA A800LB A800LC A800LD
Contextual Info: GE-SPCO 34E D • 3ß74Sß4 0000156 b H G E S P A800 —-oc-tb 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design, manufactured by Staiic ¿'öwer Component uoeràtion Malvern,PA USA G E CO/ S T A T I C PUR CMPN T

D2065C5

Abstract: Infineon power diffusion process IDH20G65C5
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH20G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the

D2065C5

Abstract: IDW20G65C5
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW20G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW20G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH20G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH20G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW20G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW20G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

tunnel diode

Contextual Info: LIMITER TUNNEL DIODE DETECTORS ML 7718-0000 SERIES DESCRIPTION T his series o f lim iter-detectors offers sim ilar performance advantages to the standard tunnel diode detectors but with extended RF input power range. A silicon PIN diode is integrated at the input o f the device to provide passive

Contextual Info: SKNa 402 Stud Diode Avalanche Diode SKNa 402 8PQ2R:1 ?O2B@ T U77 $ P:&=1:5: %&'5+ L3/ 3(,1(5350 3.+/&,13(R G:&= 2:1( 8 ¥]77 D777 DC77 D677 D]77 DW77 ?O$8 T D77 $ P01(V EW7X >) T WW YGR @IJ& D7C^¥] @IJ& D7C^D7 @IJ& D7C^DC @IJ& D7C^D6 @IJ& D7C^D] @IJ& D7C^DW

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

Contextual Info: DISCRETE SEMICONDUCTORS P Â T Â S ln lE E T BAS216 High-speed switching diode 1999 Apr 22 Product specification Supersedes data of 1996 Apr 03 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed switching diode

SHINDENGEN DIODE

Contextual Info: t - K 77+ '> + ;U 5 f'T ^ -K Super Fast Recovery Diode Axial Diode U ïW ^ïfèm OUTLINE DIMENSIONS D1NL40 400V 0.9A • e / ^ x # trr5 0 n s ffl « •SR «f mzpo-n-^iv 0m m . OA. »TO • a « . «¡s. f a • Æ tè H RATINGS Absolute Maximum Ratings h

Contextual Info: DIODE A R R A Y f .r .d . Type D 1C A K 20/ D 1C A K 20R F e a tu re s • 9*4 it— 77" :i3'S—Y • a 4 7 / —K• L fzr* * —YTu 4 T ' t 0 • iy , 3x h rnrnx- # -a «t • 7 7 X F > #'<>)?'' it—K T " t0 • DICAKs series are diode arrays consist

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

T 4512 H diode

Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: DIODE A R R A Y S 1 Y A K 2 f .r .d . Type n * Featu res V<T>1f7 X X 3 >f 77”2 • g ^ ffi« , S i a x h *^ipiic:gj^-r*^ h J: b ''°7 * — ^ > x £ i t ; £ L i 3 n x • 7 r x h U g r - f Lfc„ * — K T t o • S l Y A K s are diode arrays consist of two

Contextual Info: v a y Schottky Barrier Diode Twin Diode O U T L IN E D IM E N S IO N S SF20SC4 40V 20A • T j 15CTC • P r r s m 77/ 5 V î ' i S ë Œ •« » 1 Œ 2 K V 1 S E •S R 8 S •D C /D C •ma. f-A . oa §5 • a « . • Æ tè ü R A T IN G S • fê & fii^ ü É të

1N4148WS

Contextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C

Contextual Info: Schottky Barrier Diode Twin Diode O U T L IN E D IM E N S IO N S D25SC6MR 60V 25A • T jl5 0 ° C • Prrsm 77 V 'J i ffitl m m •S R S Ü z\yi {—S’ • D C /D C •m m , t f - h s oAHtg •£ < § . 7 K -^ ^ W *g g R A TIN G S Absolute Maximum Ratings

2050s

Contextual Info: S/avM*- KU7 S W - I* Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S15SC4M Prrsm 77 -, ^+0.5 4>33±0-2 40 V 15A > T jl5 0 ° C Unit • mm Package I MTO-3P n ^ b iö # W Date code \ 5.0 ±0-3 T ype No. » \ 2.0 ±o.3 2.2 ± 0 - 5 ’ 2.4 ±o.3

Contextual Info: S /avM *- KU7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D5SC4MR 40V 5A > T jl 50°C Prrsm 77 >7,llÆ -,lbK V 'J i ffill > S R S ;H > D C /D C m m s t f - h s o A H tg ijife s 7t RATINGS Absolute Maximum Ratings a Item 5 Symbol Conditions

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D30SC4M 40V 30A •T jl5 0 °C • Prrsm 77 V'J i f f i t l m m •S R S Ü • D C /D C z\yi {—S’ •m m , t f - h s oAHtg •£ < § . 7 K -^ ^ W *g g RATINGS Absolute Maximum Ratings a a E -f- Item

D5S6M

Contextual Info: mm S /avM *- A'UT7 Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D5S6M 60V 5A • T jl5 0 ° C V 'J i f f ill • Prrsm 77 • 7 ,llÆ - ,lb K m •SRSÎÜ •D C /D C •W M, t f- h s OAUtg • £ < § . 7t RATINGS Absolute Maximum Ratings a i 5

cps-3500

Abstract: 5972 pentode simple vu audio meter I960 Scans-0017353
Contextual Info: TENTATIVE DATA IU5WA TUNG-SOL • DIODE PENTODE M INIATURE T Y P E - 4 MAX li’ MAX. T -5 4 2 i MAX. A N Y MOUNTING POSITION BOTTOM VIEW MINIATURE BUTTON 7 PIN BASE GLASS BULB 6BW T H E 1U5WA IS A F IL A M E N T T Y P E , S H AR P C U T - O F F , DIODE P E N T O D E IN T H E 7 PIN MINIA­

DIODE 5035

Abstract: A796 LA2100 a23 445-1 TT 2200 sta 2000 fuse UP 5035 JJ6 diode High Power Rectifier Diode general electric
Contextual Info: G E CO-. S T A T I C PWR CM PN T 2bE I> • 3674SÛ4 DQ0QQÔ3 T silicon K C T i f e diode PG Page Issue Oate 5.035 i i 7-6-79 T - Ô 3 -2 3 / 6RT109/A796 f eatures The 6RT109/A796, 53mm/ high power rectifier diode is designed for use in high frequency applications (up to 5 KHZ or wherever a fast/soft