Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE ST 2060 Search Results

    DIODE ST 2060 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ST 2060 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd marking dt2

    Abstract: HFA08TB120S SMD-220 b1103 SMD Transistor Marking Code 335
    Text: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2


    Original     		PD-20603 HFA08TB120S 140nC HFA08TB120S processi86) SMD-220 smd marking dt2 b1103 SMD Transistor Marking Code 335 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGE50NC60VD N-channel 50A - 600V - ISOTOP Very fast PowerMESH IGBT General features Type VCES STGE50NC60VD 600V VCE sat (Max) IC @25°C @100°C 2.5V 50A • High current capability ■ High frequency operation ■ Low CRES/CIES ratio (no cross-conduction


    Original     		STGE50NC60VD PDF

    schematic diagram UPS

    Abstract: GE50NC60VD ST IGBT code marking STGE50NC60VD ic MARKING QG schematic diagram UPS inverter schematic inverter STGE50NC60VD st 358 ST UPS design JESD97
    Text: STGE50NC60VD N-channel 50A - 600V - ISOTOP Very fast PowerMESH IGBT Features Type VCES STGE50NC60VD 600V VCE sat (Max) IC @25°C @100°C 2.5V 50A • High current capability ■ High frequency operation ■ Low CRES/CIES ratio (no cross-conduction susceptibility


    Original     		STGE50NC60VD schematic diagram UPS GE50NC60VD ST IGBT code marking STGE50NC60VD ic MARKING QG schematic diagram UPS inverter schematic inverter STGE50NC60VD st 358 ST UPS design JESD97 PDF

    GE50NC60VD

    Abstract: STGE50NC60VD 15V 20A SMPS circuit diagram igbt ups schematic
    Text: STGE50NC60VD N-channel 50A - 600V - ISOTOP Very fast PowerMESH IGBT Features Type VCES STGE50NC60VD 600V VCE sat (Max) IC @25°C @100°C 2.5V 50A • High current capability ■ High frequency operation ■ Low CRES/CIES ratio (no cross-conduction susceptibility


    Original     		STGE50NC60VD STGE50NC60VD GE50NC60VD 15V 20A SMPS circuit diagram igbt ups schematic PDF

    GE50NC60VD

    Abstract: STGE50NC60VD schematic inverter STGE50NC60VD
    Text: STGE50NC60VD 50 A - 600 V very fast IGBT Features • High current capability ■ High frequency operation ■ Low CRES/CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications ISOTOP ■ High frequency inverters


    Original     		STGE50NC60VD GE50NC60VD STGE50NC60VD schematic inverter STGE50NC60VD PDF

    Untitled

    Abstract: No abstract text available
    Text: STGE50NC60VD 50 A - 600 V very fast IGBT Features • High current capability ■ High frequency operation ■ Low CRES/CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications ISOTOP ■ High frequency inverters


    Original     		STGE50NC60VD PDF

    smd TRANSISTOR code marking 2F

    Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD 9bb smd transistor 2f transistor D207 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 207 TRANSISTOR SMD MARKING CODE 2F transistor smd code marking tm
    Text: Preliminary Data Sheet PD-20603 rev. A 01/99 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits


    Original     		PD-20603 HFA08TB120S 140nC HFA08TB120S smd TRANSISTOR code marking 2F SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD 9bb smd transistor 2f transistor D207 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 207 TRANSISTOR SMD MARKING CODE 2F transistor smd code marking tm PDF

    smd TRANSISTOR code marking 2F

    Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
    Text: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits


    Original     		PD-20605 HFA16TB120S 260nC HFA16TB120S smd TRANSISTOR code marking 2F SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838 PDF

    TRANSISTOR SMD 9bb

    Abstract: SMD TRANSISTOR MARKING 9bb smd TRANSISTOR code marking 2F smd marking dt2 smd transistor 2f x TRANSISTOR SMD MARKING CODE 360 9936 transistor
    Text: Preliminary Data Sheet PD-20602 rev. A 01/99 HFA06TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits


    Original     		PD-20602 HFA06TB120S 116nC HFA06TB120S TRANSISTOR SMD 9bb SMD TRANSISTOR MARKING 9bb smd TRANSISTOR code marking 2F smd marking dt2 smd transistor 2f x TRANSISTOR SMD MARKING CODE 360 9936 transistor PDF

    AAAA series SMD transistor

    Abstract: No abstract text available
    Text: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2


    Original     		PD-20603 HFA08TB120S 140nC HFA08TB120S 08-Mar-07 AAAA series SMD transistor PDF

    MAR 618 transistor

    Abstract: transistor smd code marking tm transistor mar 618 HFA08TB120S SMD-220
    Text: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2


    Original     		PD-20603 HFA08TB120S 140nC HFA08TB120S 12-Mar-07 MAR 618 transistor transistor smd code marking tm transistor mar 618 SMD-220 PDF

    GY40N

    Abstract: gy40NC60 GY40NC60VD GY40NC60V 600V 20A 50KHz STGY40NC60VD JESD97 IC 2030 schematic diagram
    Text: STGY40NC60VD N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT Features Type VCES STGY40NC60VD 600V IC VCE sat (max)@25°C @100°C < 2.5V 50A • High current capability ■ High frequency operation up to 50kHz ■ Low CRES / CIES ratio (no cross-conduction


    Original     		STGY40NC60VD Max247 50kHz GY40N gy40NC60 GY40NC60VD GY40NC60V 600V 20A 50KHz STGY40NC60VD JESD97 IC 2030 schematic diagram PDF

    transistor 20607

    Abstract: smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE 2x 20607 SMD TRANSISTOR MARKING 9bb PD-20607 TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD 2x t HFA08TB6 TRANSISTOR SMD 2X K
    Text: Preliminary Data Sheet PD -20607 rev. A 01/99 HFA08TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits


    Original     		HFA08TB60S HFA08TB60S transistor 20607 smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE 2x 20607 SMD TRANSISTOR MARKING 9bb PD-20607 TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD 2x t HFA08TB6 TRANSISTOR SMD 2X K PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD -20604 11/00 HFA08TA60CS HEXFRED Ultrafast, Soft Recovery Diode TM 2 Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		HFA08TA60CS HFA08TA60CS PDF

    transistor 20607

    Abstract: 20607 SMD-220 HFA08TB60S IRFP250 TRANSISTOR SMD MARKING CODE 304 h TRANSISTOR SMD 9bb
    Text: Bulletin PD -20607 rev. B 12/00 HFA08TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VR = 600V VF typ. * = 1.4V IF(AV) = 8.0A Qrr (typ.)= 65nC


    Original     		HFA08TB60S HFA08TB60S transistor 20607 20607 SMD-220 IRFP250 TRANSISTOR SMD MARKING CODE 304 h TRANSISTOR SMD 9bb PDF

    Untitled

    Abstract: No abstract text available
    Text: STD100N3LF3 N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET II Power MOSFET Features Type VDSSS STD100N3LF3 30 V RDS on ID Pw <0.0055 Ω 80 A(1) 110 W 3 1. Current limited by package 1 • 100% avalanche tested ■ Logic level threshold DPAK Applications


    Original     		STD100N3LF3 100N3LF3 PDF

    100N3LF3

    Abstract: STD100N3LF3
    Text: STD100N3LF3 N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET II Power MOSFET Features Type VDSSS STD100N3LF3 30 V RDS on ID Pw <0.0055 Ω 80 A(1) 110 W 3 1. Current limited by package 1 • 100% avalanche tested ■ Logic level threshold DPAK Applications


    Original     		STD100N3LF3 100N3LF3 100N3LF3 STD100N3LF3 PDF

    100N3LF3

    Abstract: STD100N3LF3 ID13206
    Text: STD100N3LF3 N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET II Power MOSFET Features Type VDSSS STD100N3LF3 30 V RDS on ID Pw <0.0055 Ω 80 A(1) 110 W 3 1. Current limited by package 1 • 100% avalanche tested ■ Logic level threshold DPAK Applications


    Original     		STD100N3LF3 100N3LF3 100N3LF3 STD100N3LF3 ID13206 PDF

    Untitled

    Abstract: No abstract text available
    Text: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package


    Original     		STD100N3LF3 STU100N3LF3 STU100N3LF3 PDF

    Untitled

    Abstract: No abstract text available
    Text: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package


    Original     		STD100N3LF3 STU100N3LF3 \TEMP\SGST\STU100N3LF3 22-Aug-2007 PDF

    100N3LF3

    Abstract: JESD97 STD100N3LF3 STU100N3LF3
    Text: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package


    Original     		STD100N3LF3 STU100N3LF3 100N3LF3 JESD97 STD100N3LF3 STU100N3LF3 PDF

    D100N03L

    Abstract: diode st 2060 D100N JESD97 STD100N03L STD100N03L-1 STD100N03LT4 STD100
    Text: STD100N03L STD100N03L-1 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N03L 30 V <0.0055 Ω 80 A(1) 110 W STD100N03L-1 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package


    Original     		STD100N03L STD100N03L-1 D100N03L diode st 2060 D100N JESD97 STD100N03L STD100N03L-1 STD100N03LT4 STD100 PDF

    smd TRANSISTOR code marking 2F

    Abstract: smd dt2 SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE kh 20602 HFA06TB120S IRFP250 SMD-220 transistor smd code marking 420
    Text: Bulletin PD -20602 rev. C 12/00 HFA06TB120S. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions K VR = 1200V BASE + 2 VF(typ.)* = 2.4V


    Original     		HFA06TB120S. 116nC HFA06TB120S smd TRANSISTOR code marking 2F smd dt2 SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE kh 20602 IRFP250 SMD-220 transistor smd code marking 420 PDF

    IR 1838 T

    Abstract: smd TRANSISTOR code marking 2F SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh HFA16TB120 HFA16TB120S IRFP250 SMD-220 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2F
    Text: Bulletin PD -20605 rev. B 11/00 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V VF typ. * = 2.3V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits


    Original     		HFA16TB120S 260nC HFA16TB120S IR 1838 T smd TRANSISTOR code marking 2F SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh HFA16TB120 IRFP250 SMD-220 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2F PDF