Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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B5817W
Abstract: B5818W B5819W Diode SJ Sj diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE FEATURES + For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
B5817W
B5819W
Diode SJ
Sj diode
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Diode SJ 14
Abstract: DIODE marking Sl B5817WS-5819WS B5818WS B5819WS Diode SJ diode marking SJ B5817WS diode reverse voltage protection B5819WSSL
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
Diode SJ 14
DIODE marking Sl
B5817WS-5819WS
B5819WS
Diode SJ
diode marking SJ
B5817WS
diode reverse voltage protection
B5819WSSL
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B5817W-5819W
Abstract: DIODE marking Sl B5819W B5817W B5818W diode reverse voltage protection Schottky Diode 30V 1A SOD123 1A diode low reverse current
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE FEATURES + For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. - MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
B5817W-5819W
DIODE marking Sl
B5819W
B5817W
diode reverse voltage protection
Schottky Diode 30V 1A SOD123
1A diode low reverse current
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Untitled
Abstract: No abstract text available
Text: SKKE 600F THYRISTOR BRIDGE,SCR,BRIDGE WXHY WXXY SJXYH Z =P@ % '40124C4 I0-C. 3 , )*+2*C)CB ):.,0+2)*5 W W SJ%W Z >O@ % 'B2*< ?[@¥ P@ AM¥ U( Z [P ]$5 ?Q@@ ?Q@@ Symbol Conditions SJ%W SJHY 2a+ SEMIPACK Fast Diode Modules SKKE 600F H^^N O@@J?Q Values Units
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40124C4
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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PDF
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OD-123
OD-123
B5817W-5819W
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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PDF
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OD-123
OD-123
B5817W-5819W
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ
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Original
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PDF
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
OD-123
B5817W-5819W
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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1N4465
Abstract: 1N4475 1N4474 1N4464 1N4464US 1N4494 1N4494US SN63 zener diode 1N4464 1N4477
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev A SJ/ SX /SV SS Zener 1.5W DIODE • • • • • • Ultra-low reverse leakage current Zener voltage available from 9.1V to 160V Sharp Zener knee Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4464/US
1N4465/US
1N4466/US
1N4467/US
1N4468/US
1N4469/US
1N4465
1N4475
1N4474
1N4494
1N4494US
SN63
zener diode 1N4464
1N4477
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1N4475
Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4475
1N4465
1N4469
1N4474
1N4464 Zener diode
zener diode 1N4464
1N4478
1N4477
1N4471
1N4479
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d 5072 transistor
Abstract: d 5072 1N6171AUS
Text: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6138A/US
1N6173A/US
1N6138A/US
1N6139A/US
1N6140A/US
1N6141A/US
1N6142A/US
1N6143A/US
1N6144A/US
1N6145A/US
d 5072 transistor
d 5072
1N6171AUS
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C 5074 transistor
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6102A/US
1N6137A/US
1N6102A/US
1N6103A/US
1N6104A/US
1N6105A/US
1N6106A/US
1N6107A/US
1N6108A/US
1N6109A/US
C 5074 transistor
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1N5629a
Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
Text: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N5555
1N5558
1N5907
1N5629A
1N5665A
1N5629A
1N5630A
1N5645A series
1N566
1N5645A
1N5558
1N5630A
1N5631A
1N5632A
1N5633A
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RJL60S5DPP-E0
Abstract: RJL60S5 R07DS0819EJ0100
Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0100 Rev.1.00 Feb 04, 2013 Features • Superjunction MOSFET Built-in fast recovery diode trr = 170 ns typ. at IF = 20 A, VGS = 0, diF/dt = 100 A/s, Ta = 25C
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RJL60S5DPP-E0
R07DS0819EJ0100
PRSS0003AG-A
O-220FP)
RJL60S5DPP-E0
RJL60S5
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RJL60S5
Abstract: No abstract text available
Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPE
R07DS0817EJ0001
PRSS0004AE-B
RJL60S5
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RJL60S5
Abstract: RJL60S5DPE
Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPE
R07DS0817EJ0001
PRSS0004AE-B
RJL60S5
RJL60S5DPE
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RJL60S5
Abstract: PRSS0004ZH-A fet 600V 20A RJL60S5DPK-M0
Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPK-M0
R07DS0818EJ0002
PRSS0004ZH-A
RJL60S5
PRSS0004ZH-A
fet 600V 20A
RJL60S5DPK-M0
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RJL60S5
Abstract: R07DS0819EJ0001
Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPP-E0
R07DS0819EJ0001
PRSS0003AG-A
O-220FP)
RJL60S5
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Untitled
Abstract: No abstract text available
Text: E R E 2 4 - 0 6 • E R E 7 4 - 0 6 3 o a •6 0 0 V • Outline Drawings FAST RECOVERY DIODE : Features <i"<—î/a 'sj-'y y • Glass passivated chip High reverse voltage capability Stud mounted • Applications • • • Switching power supplies Free-wheel diode
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OCR Scan
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PDF
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l95t/R89
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NA42
Abstract: No abstract text available
Text: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.
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OCR Scan
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PDF
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1SV303
C2V/C25V
NA42
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV302 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 2 CATV TUNING C%sj! C2 5 V = 17.5 • High Capacitance Ratio : • Low Series Resistance : rs = 1.05Q Typ. • Useful for Small Size Tuner. U nit in mm (Typ.)
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OCR Scan
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PDF
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1SV302
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c81-004
Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
Text: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class
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OCR Scan
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PDF
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ERC81-004
e18-ts
95t/R89
Shl50
c81-004
c81 004
Diode C81 004
C81004
ERC81
T151
T460
T810
T930
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