1N4475
Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4475
1N4465
1N4469
1N4474
1N4464 Zener diode
zener diode 1N4464
1N4478
1N4477
1N4471
1N4479
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d 5072 transistor
Abstract: d 5072 1N6171AUS
Text: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6138A/US
1N6173A/US
1N6138A/US
1N6139A/US
1N6140A/US
1N6141A/US
1N6142A/US
1N6143A/US
1N6144A/US
1N6145A/US
d 5072 transistor
d 5072
1N6171AUS
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C 5074 transistor
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6102A/US
1N6137A/US
1N6102A/US
1N6103A/US
1N6104A/US
1N6105A/US
1N6106A/US
1N6107A/US
1N6108A/US
1N6109A/US
C 5074 transistor
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1N4465
Abstract: 1N4475 1N4474 1N4464 1N4464US 1N4494 1N4494US SN63 zener diode 1N4464 1N4477
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev A SJ/ SX /SV SS Zener 1.5W DIODE • • • • • • Ultra-low reverse leakage current Zener voltage available from 9.1V to 160V Sharp Zener knee Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4464/US
1N4465/US
1N4466/US
1N4467/US
1N4468/US
1N4469/US
1N4465
1N4475
1N4474
1N4494
1N4494US
SN63
zener diode 1N4464
1N4477
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1N5629a
Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
Text: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N5555
1N5558
1N5907
1N5629A
1N5665A
1N5629A
1N5630A
1N5645A series
1N566
1N5645A
1N5558
1N5630A
1N5631A
1N5632A
1N5633A
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RJL60S5DPP-E0
Abstract: RJL60S5 R07DS0819EJ0100
Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0100 Rev.1.00 Feb 04, 2013 Features • Superjunction MOSFET Built-in fast recovery diode trr = 170 ns typ. at IF = 20 A, VGS = 0, diF/dt = 100 A/s, Ta = 25C
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RJL60S5DPP-E0
R07DS0819EJ0100
PRSS0003AG-A
O-220FP)
RJL60S5DPP-E0
RJL60S5
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RJL60S5
Abstract: No abstract text available
Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPE
R07DS0817EJ0001
PRSS0004AE-B
RJL60S5
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RJL60S5
Abstract: RJL60S5DPE
Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPE
R07DS0817EJ0001
PRSS0004AE-B
RJL60S5
RJL60S5DPE
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RJL60S5
Abstract: PRSS0004ZH-A fet 600V 20A RJL60S5DPK-M0
Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPK-M0
R07DS0818EJ0002
PRSS0004ZH-A
RJL60S5
PRSS0004ZH-A
fet 600V 20A
RJL60S5DPK-M0
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RJL60S5
Abstract: R07DS0819EJ0001
Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPP-E0
R07DS0819EJ0001
PRSS0003AG-A
O-220FP)
RJL60S5
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RJL60S5
Abstract: No abstract text available
Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPK-M0
R07DS0818EJ0002
PRSS0004ZH-A
RJL60S5
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Untitled
Abstract: No abstract text available
Text: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W
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1N6108A
1N6136A
MIL-PRF-19500/516
1N6108A/US
1N6109A/UStasheet
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1n4109-1
Abstract: zener diode 10 sv
Text: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1
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1N4100-1/UR-1
1N4135-1/UR-1
1N41001/UR
1N41011/UR
1N41021/UR
1N41031/UR
1N41041/UR
1N41051/UR
1N41061/UR
1N41071/UR
1n4109-1
zener diode 10 sv
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IPA50R500CE
Abstract: DIODE V10-20 mosfet equivalent IPA50R280CE LLC resonant smps resonant llc full bridge 400W pwm smps schematic SWITCHING bjt 500v IPA50R280C
Text: Application Note AN 2012-04 V1.0 April 2012 500V CoolMOSTM CE 500V Superjunction MOSFET for Consumer and Lighting Applications IFAT PMM APS SE SL René Mente Francesco Di Domenico 500V CoolMOSTM CE Application Note AN 2012-04 V1.0 April 2012 Edition 2011-02-02
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ED-29,
IPA50R500CE
DIODE V10-20
mosfet equivalent
IPA50R280CE
LLC resonant
smps resonant llc full bridge
400W pwm smps schematic
SWITCHING bjt 500v
IPA50R280C
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diode sj
Abstract: 2SK3930-01L
Text: 2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3930-01L
diode sj
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Diode SJ 12
Abstract: 2SK3930-01L Diode SJ
Text: 2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3930-01L
Diode SJ 12
Diode SJ
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Diode SJ 44
Abstract: No abstract text available
Text: SKNa 20 Stud Diode Avalanche Diode SKNa 20 Features # $%&'& *+ ,-.+ /+%+/0+ # # # )*&/&),+/10,1) 2. ,3 4566 7+/8+,1) 8+,&' )&0+ 91,* :'&00 1(02'&,3/ $(3;+ 01;+ ,*/+&;+; 0,2; <=> ? @33'1(: %1& 8+,&' .'&,+0 3/ *+&, 01(A0 =BCD $(3;+ ,3 0,2; MGNOK81( <LO?= Q R6 $
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MGNOK81(
S1828
64X4D
Diode SJ 44
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IC 4558 surround sound circuit
Abstract: ILX554 ICX285AL LCX029amt sony led tv electronic diagram LCX017CLT surround circuit using ic 4558 pin diagram composite to GVIF ILX551A GVIF
Text: FIRST HALF 2 0 0 1 semiconductor product guide Table of Contents CAVD Multimedia Products . . . . . . . . . . . . . . . . . . . . . . . . 2 CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3
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SBD-PG010101
IC 4558 surround sound circuit
ILX554
ICX285AL
LCX029amt
sony led tv electronic diagram
LCX017CLT
surround circuit using ic 4558 pin diagram
composite to GVIF
ILX551A
GVIF
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RF2 2A 250V
Abstract: No abstract text available
Text: RF2 2-pole Force Guided Relay / SJ Series Socket For simple and easy safety measures - reduce costs and installation space. • 2-pole force guided relay to reduce cost and installation space. • Force guided contact mechanism EN50205 Type A TÜV approved .
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EN50205
UL60947-4-1A
E55996
LR35144
EN50/
EP1471-0
RF2 2A 250V
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Untitled
Abstract: No abstract text available
Text: 2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3930-01L
Stora10
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led 5050 rgb datasheet
Abstract: 5050 rgb led GVIF cable ILX511 sony exview camera IC 4558 surround sound circuit CCD LINEAR SENSOR 512 IC PROCESSOR VCT1 ICX205 ccd sony ilx511
Text: F I R S T Q U A R T E R 2 0 0 0 semiconductor product guide Table of Contents CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3 Area Sensor — Progressive Scan . . . . . . . . . . . . . . . . . . 4
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Sj 47 diode
Abstract: power supply 100v 30a schematic
Text: 2SK3646-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3646-01L
Sj 47 diode
power supply 100v 30a schematic
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SPF12
Abstract: No abstract text available
Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators
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2SK3774-01L
SPF12
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diode 1n4637
Abstract: in4632 zener diode in4560 1N41 IN4620 IN4550 IN4624 1n41113 1N4611A IN4619
Text: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z
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1N4549
1N4550
1N4551
1N4552
1N4553
1N4554
1N4555
1N4556
1N4557
1N4558
diode 1n4637
in4632
zener diode in4560
1N41
IN4620
IN4550
IN4624
1n41113
1N4611A
IN4619
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